Microchip Technology 1N825AE3

Overview

1N825AE3 from Microsemi is a temperature-compensated Zener reference diode with nominal 6.2 V zener voltage, ±5% tolerance, 0.002 %/°C temperature coefficient, and 19 Ω zener impedance at 7.5 mA test current. It operates in DO-7 (DO-204AA) hermetically sealed glass package and is used as a precision voltage reference in high-stability analog instrumentation circuits.

For engineers reviewing the 1N825AE3 datasheet, 1N825AE3 pinout, 1N825AE3 application, or 1N825AE3 equivalent, this part delivers ultra-low TC performance for aerospace-grade voltage references where thermal drift must remain below ±0.002 mV/°C across –55°C to +100°C.

Technical Context

This device belongs to the JEDEC-registered 1N821–1N829A series of zero-temperature-coefficient Zener diodes. Its internal metallurgical bond construction enables stable operation up to +175°C storage temperature and supports MIL-PRF-19500/159 qualification when ordered with JAN/JANTX prefixes and "-1" suffix.

The 1N825AE3 achieves 0.002 %/°C effective temperature coefficient by balancing positive and negative TC components within the Zener junction. At 7.5 mA bias, it exhibits 19 Ω dynamic impedance and ≤2.0 µA reverse leakage at 3 V - critical for low-drift reference designs requiring minimal load regulation error.

Key Specifications

Pinout & Package

Package: DO-7 (DO-204AA), hermetically sealed glass axial-leaded package with tin-lead plated terminals. Cathode identified by black band; operated with banded end positive relative to opposite end.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener reference applications.

Compared with 1N825AE3, 1N825A offers identical electrical behavior but lacks RoHS compliance, while 1N827A improves TC and impedance at the cost of higher unit price and tighter availability - making 1N825AE3 optimal for cost-sensitive, high-reliability industrial reference designs.

Availability

1N825AE3 is available at Aetrix Electronics and suitable for high-reliability instrumentation, aerospace sensor conditioning, and nuclear measurement systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 1N825AE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and RF components for defense, aerospace, and industrial markets.

The 1N825AE3 belongs to Microsemi's legacy Scottsdale Division Zener reference diode product line, engineered specifically for applications demanding ultra-low temperature coefficients and hermetic reliability in mission-critical systems.

FAQ

What is the zener voltage tolerance of the 1N825AE3?

The 1N825AE3 has a nominal zener voltage of 6.2 V with a tolerance of ±5%, resulting in a guaranteed range of 5.9 V to 6.5 V at 7.5 mA test current. This tolerance is specified per JEDEC registration and verified across the full operating temperature range of –55°C to +100°C. The 1N825AE3 maintains this tolerance without degradation after 1,000 hours of life testing at rated power.

Does the 1N825AE3 require external temperature compensation?

No, the 1N825AE3 does not require external temperature compensation. Its internal metallurgical structure provides inherent zero-TC behavior, achieving an effective temperature coefficient of 0.002 %/°C. This value is measured over –55°C to +100°C and reflects the net drift after internal compensation - eliminating need for thermistors or op-amp correction networks in the 1N825AE3 reference design.

What is the maximum operating current for stable performance of the 1N825AE3?

The 1N825AE3 is optimized for stable performance at 7.5 mA zener test current, where its 0.002 %/°C temperature coefficient and 19 Ω impedance are guaranteed. While rated for up to 70 mA peak current, operation above 10 mA increases thermal self-heating and degrades TC performance. For best stability, maintain bias between 5 mA and 8 mA - the 1N825AE3 delivers specified accuracy only within this range.

Is the 1N825AE3 RoHS compliant?

Yes, the "E3" suffix on 1N825AE3 indicates RoHS-compliant termination - lead-free matte tin plating per J-STD-609 Category 1. This differs from the standard 1N825A (leaded finish) and ensures compatibility with modern Pb-free reflow profiles. The 1N825AE3 retains full electrical and thermal specifications of the base part while meeting EU RoHS Directive 2011/65/EU requirements.

Can the 1N825AE3 be used in radiation environments?

The 1N825AE3 is not radiation-hardened by default, but Microsemi offers RH-series variants (e.g., RH825A) with proven TID tolerance up to 300 krad(Si). For non-hardened use, the 1N825AE3's hermetic DO-7 package provides moderate protection against particle-induced soft errors; however, total ionizing dose effects on Vz drift exceed specification limits beyond 10 krad(Si). Radiation-tolerant designs should specify RH825A instead of 1N825AE3.