onsemi 1N960BTR

Overview

1N960BTR from Fairchild Semiconductor is a 5% tolerance, 9.1 V nominal Zener diode in DO-35 glass package, rated for 500 mW power dissipation at 75°C with 7.5 mA test current, used for precision voltage regulation and reference in low-power analog circuits.

For engineers reviewing the 1N960BTR datasheet, pinout, applications, or equivalent options, key selection criteria include zener voltage tolerance (±5%), dynamic impedance (35 Ω at 7.5 mA), leakage current (0.5 μA at 7.6 V), thermal derating (4.0 mW/°C above 75°C), and DO-35 mechanical compatibility.

Technical Context

The 1N960BTR operates as a two-terminal voltage reference device, maintaining stable reverse-biased conduction at its specified zener voltage (9.1 V typical) under controlled current conditions. Its performance is defined by tight 5% voltage tolerance, low dynamic impedance (35 Ω at I_Z = 7.5 mA), and guaranteed leakage current ≤0.5 μA at 7.6 V.

Designed for operation within -65°C to +200°C junction/storage temperature range, it uses a glass-passivated silicon junction in a hermetically sealed DO-35 axial package with cathode band marking. Power dissipation is thermally limited to 500 mW at lead temperature ≤75°C, derating linearly at 4.0 mW/°C beyond that point.

Key Specifications

Pinout & Package

DO-35 glass axial package with cathode indicated by color band; two-terminal device with no internal polarity-sensitive circuitry beyond standard diode junction orientation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with 1N960BTR, the 1N4739A offers higher power capacity in a larger package, while the BZX55-C9V1 matches the DO-35 form factor but delivers superior temperature stability-making each suitable for distinct thermal or precision requirements in voltage reference design.

Availability

1N960BTR is available at Aetrix Electronics and suitable for precision voltage reference, overvoltage protection, and low-power analog regulation requiring stable component supply across industrial control, test equipment, and embedded sensor systems.

Supply support for 1N960BTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.

The 1N960BTR belongs to Fairchild's legacy 1N957B–1N979B Zener diode family, engineered for general-purpose voltage regulation and clamping in cost-sensitive, high-reliability analog circuits.

FAQ

What is the nominal zener voltage of the 1N960BTR?

The 1N960BTR has a nominal zener voltage of 9.1 V, measured at a test current of 7.5 mA. Its minimum and maximum values are 8.645 V and 9.555 V respectively, reflecting the ±5% tolerance. This voltage defines the stable reverse-conduction point used for regulation and reference functions in circuits where the 1N960BTR is deployed.

What is the maximum power dissipation rating for the 1N960BTR?

The 1N960BTR is rated for 500 mW power dissipation at a lead temperature (T_L) of 75°C or less. Above this temperature, it must be derated linearly at 4.0 mW per degree Celsius. This thermal limit ensures safe operation in the DO-35 glass package and is critical when designing for ambient conditions exceeding 75°C in applications using the 1N960BTR.

What is the zener impedance of the 1N960BTR and why does it matter?

The 1N960BTR exhibits a zener impedance (Z_Z) of 35 Ω at 7.5 mA test current. This parameter quantifies how much the output voltage changes with load current variation - lower impedance means better regulation stability. In precision reference or clamping roles, this value directly impacts the 1N960BTR's ability to maintain a steady voltage under dynamic conditions.

How is the cathode identified on the 1N960BTR package?

The cathode of the 1N960BTR is marked by a visible color band on the DO-35 glass body, consistent with industry-standard diode polarity marking. This band aligns with the "B" in the top-mark "60B" (second and third lines of the three-line marking). Correct orientation is essential for proper reverse-bias operation of the 1N960BTR in shunt regulation or clamping configurations.

What is the leakage current specification for the 1N960BTR?

The 1N960BTR specifies a maximum leakage current (I_R) of 0.5 μA at 7.6 V - a voltage 5% below its nominal 9.1 V zener voltage. This low leakage ensures minimal parasitic current draw in high-impedance circuits such as sensor bias networks or precision comparators, preserving accuracy and battery life where the 1N960BTR serves as a reference element.