onsemi 1PMT5935BT1G

Overview

1PMT5935BT1G from onsemi is a 3.2 W surface-mount Zener diode in the POWERMITE (DO-216AA) package, with nominal Zener voltage 27 V, test current 13.9 mA, dynamic impedance 23 Ω at IZT, and maximum leakage current 0.25 µA at 20.6 V reverse bias. It delivers stable voltage regulation in space-constrained portable power rails and ESD-sensitive signal lines.

For engineers reviewing the 1PMT5935BT1G datasheet, pinout, applications, or equivalent options, key selection criteria include its 27 V nominal breakdown, 3.2 W thermal-rated dissipation with cathode tab heatsinking, 1.1 mm profile, JEDEC DO-216AA compliance, and Class 3 HBM ESD rating (>16 kV).

Technical Context

The 1PMT5935BT1G operates as a two-terminal voltage reference device, conducting in reverse bias above its specified Zener breakdown threshold. Its thermal performance relies on direct cathode tab conduction to PCB copper, achieving 23 °C/W junction-to-cathode resistance when mounted per recommended pad layout.

It exhibits low dynamic impedance (23 Ω at 13.9 mA) and tight voltage tolerance (±5% around 27 V), enabling precise clamping in overvoltage protection circuits. The device maintains stable regulation across −55 °C to +150 °C operating temperature range with no external biasing required.

Key Specifications

Pinout & Package

The 1PMT5935BT1G uses the POWERMITE (DO-216AA) surface-mount package: 1.90 × 1.96 × 1.00 mm, with full metallic bottom for solder wetting and integral cathode heat-sink tabs. Cathode is marked by polarity band.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Compared with 1N4733A-T and MMSZ5258B-TP, the 1PMT5935BT1G uniquely combines 3.2 W power handling, 23 Ω dynamic impedance, and DO-216AA thermal design-enabling compact, high-reliability clamping in modern portable and automotive electronics where both space and thermal margin are constrained.

Availability

1PMT5935BT1G is available at Aetrix Electronics and suitable for USB power interface protection, industrial sensor supply regulation, smartphone charger circuit protection, and automotive body control module IO safeguarding requiring stable component supply and consistent thermal performance.

Supply support for 1PMT5935BT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 1PMT5935BT1G belongs to the 1PMT59xxB series of high-power-density Zener diodes designed specifically for space-constrained, thermally demanding voltage regulation and overvoltage protection in portable and automotive electronics.

FAQ

What is the Zener voltage tolerance of the 1PMT5935BT1G?

The 1PMT5935BT1G has a Zener voltage tolerance of ±5% around its nominal 27 V rating, resulting in a guaranteed range of 25.65 V to 28.35 V at 13.9 mA test current. This tolerance is measured at 25 °C ambient and applies under steady-state thermal equilibrium conditions. The 1PMT5935BT1G maintains this specification across its full operating temperature range when properly mounted with recommended thermal pads.

Can the 1PMT5935BT1G replace a standard SMA Zener diode in existing layouts?

The 1PMT5935BT1G uses the DO-216AA (POWERMITE) package, which is 50% smaller in footprint than SMA but shares identical thermal performance when cathode tab is connected to a thermal pad. Direct replacement requires PCB pad revision to accommodate the 1.90 × 1.96 mm outline and cathode-tab thermal connection. The 1PMT5935BT1G cannot be drop-in substituted without layout changes due to differing terminal geometry and thermal path requirements.

What is the maximum continuous power dissipation for the 1PMT5935BT1G?

The 1PMT5935BT1G is rated for 3.2 W DC power dissipation when the cathode tab temperature is maintained at 75 °C. This rating assumes mounting on FR-4 PCB with minimum recommended pad size and proper thermal via implementation. Derating begins at 4.0 mW/°C above 25 °C ambient, and junction-to-cathode thermal resistance is 23 °C/W-so sustained 3.2 W operation requires active thermal management of the cathode pad.

Does the 1PMT5935BT1G meet automotive qualification standards?

The 1PMT5935BT1G is not AEC-Q200 qualified, though it operates across −55 °C to +150 °C and is used in automotive body control modules for non-safety-critical IO protection. Its 3.2 W rating, Class 3 HBM ESD immunity, and DO-216AA mechanical robustness support under-hood and cabin applications where full qualification is not mandated. For AEC-Q200-compliant designs, consult onsemi's automotive-grade Zener portfolio separately from the 1PMT5935BT1G.

How does the 1PMT5935BT1G compare to the 1PMT5934BT1G in terms of voltage and impedance?

The 1PMT5935BT1G has a nominal Zener voltage of 27 V (25.65–28.35 V range) and dynamic impedance of 23 Ω at 13.9 mA, whereas the 1PMT5934BT1G is rated at 24 V (22.8–25.2 V) with 19 Ω Z_ZT at 15.6 mA. Both share identical POWERMITE packaging, thermal specs, and ESD rating. The 1PMT5935BT1G provides higher clamping voltage for 24 V systems needing tighter upper margin, while its slightly higher impedance reflects the physics of higher-voltage Zener structures.