Microchip Technology 1PMT5956E3/TR7

Overview

1PMT5956E3/TR7 from Microsemi is a 200 V, ±5% tolerance surface-mount Zener diode in the Powermite® package, rated for 3.0 W DC power dissipation at TAB 1 = 60°C, with 1.9 mA test current (IZT), 1200 Ω dynamic impedance (ZZT), and 11.6 mA maximum Zener current (IZM). It serves as a precision voltage reference or overvoltage clamp in high-voltage industrial power supplies.

For engineers reviewing the 1PMT5956E3/TR7 datasheet, 1PMT5956E3/TR7 pinout, 1PMT5956E3/TR7 application, or 1PMT5956E3/TR7 equivalent, key selection criteria include its 200 V Zener voltage, 3.0 W thermal capability with metallic-tab heat sinking, DO-216 mechanical outline, and ESD rating >16 kV HBM - critical for ruggedized power rail protection designs.

Technical Context

This Zener diode operates in reverse breakdown mode to maintain stable voltage under varying load and temperature conditions. Its full metallic bottom and integral locking tab provide direct thermal conduction from junction to PCB copper, achieving 30°C/W junction-to-TAB thermal resistance.

The device is characterized at TL = 30°C with IZT = 1.9 mA; voltage measurement occurs 20 seconds after DC current application. Dynamic impedance (ZZT = 1200 Ω) is measured using 60 Hz RMS AC current equal to 10% of IZT, per Micro Note 202.

Key Specifications

Pinout & Package

Package: Powermite® (DO-216AA), molded surface-mount package with full metallic bottom and integral locking tab; cathode designated by TAB 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with 1N5388B and BZX84-C200, the 1PMT5956E3/TR7 uniquely combines 200 V Zener voltage, 3.0 W SMT power handling, and direct thermal conduction via metallic TAB 1 - making it the only option suitable for automated, thermally constrained high-voltage clamp designs.

Availability

1PMT5956E3/TR7 is available at Aetrix Electronics and suitable for industrial power supplies, high-voltage sensor interfaces, and automated test equipment requiring stable component supply and long-term obsolescence management.

Supply support for 1PMT5956E3/TR7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and radiation-hardened components.

The Powermite® Zener diode product line was designed for high-power-density, surface-mount voltage regulation and clamping in space-constrained industrial and telecom systems where thermal performance and automated assembly are critical.

FAQ

What is the Zener voltage tolerance for 1PMT5956E3/TR7?

The 1PMT5956E3/TR7 has a standard Zener voltage tolerance of ±5% at 200 V nominal, measured at IZT = 1.9 mA and TAB 1 temperature of 30°C. Tighter tolerances (±2%, ±1%) are available with suffixes C and D respectively, but the E3/TR7 variant specifies ±5%. This tolerance directly impacts voltage-clamp accuracy in overvoltage protection circuits.

How is thermal performance achieved in the 1PMT5956E3/TR7 package?

The 1PMT5956E3/TR7 achieves thermal performance via its Powermite® package's full metallic bottom and integral locking tab, which serve as a direct thermal conduction path from the silicon junction to the PCB. With a specified junction-to-TAB thermal resistance of 30°C/W, proper soldering of TAB 1 to a copper pour enables 3.0 W continuous dissipation without external heatsinking.

Is 1PMT5956E3/TR7 compatible with standard SMT reflow processes?

Yes, the 1PMT5956E3/TR7 is qualified for standard lead-free SMT reflow profiles. Its molded Powermite® package and metallic bottom are designed for compatibility with automatic insertion and reflow soldering per EIA-481 tape-and-reel packaging (7-inch reel, 3,000 pieces). The device withstands peak reflow temperatures up to 260°C per JEDEC J-STD-020.

What is the maximum reverse leakage current for 1PMT5956E3/TR7?

The maximum reverse leakage current (IR) for 1PMT5956E3/TR7 is 1 µA at VR = 152 V (76% of VZ), per the Electrical Characteristics table. This low leakage supports stable voltage reference behavior in high-impedance bias networks and minimizes standby power loss in clamping applications.

Does 1PMT5956E3/TR7 have a defined polarity marking, and how is it identified?

Yes, 1PMT5956E3/TR7 uses TAB 1 as the cathode terminal, clearly designated in the Mechanical Characteristics section. The cathode is marked by the larger metallic tab; Lead 2 is the anode. This polarity must be observed during PCB layout to ensure correct reverse-bias operation - incorrect orientation will result in forward conduction and failure to regulate.