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Toshiba Semiconductor and Storage 1SV239TPH3F

Part No.:
1SV239TPH3F
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Variable Capacitance (Varicaps, Varactors)
Package:
SC-76, SOD-323
Datasheet:
Aetrix1SV239TPH3F.pdf
Description:
DIODE VARACTOR 15V USC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:12,019

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Product details

Overview

1SV239TPH3F from Toshiba is a silicon epitaxial planar varactor diode optimized for UHF voltage-controlled oscillator (VCO) circuits, featuring a capacitance of 4.25 pF at 2 V reverse bias, 1.75 pF at 10 V, capacitance ratio C₂ᵥ/C₁₀ᵥ = 2.4, series resistance rₛ = 0.44 Ω (typ.), and maximum reverse voltage rating of 15 V.

For engineers reviewing the 1SV239TPH3F datasheet, 1SV239TPH3F pinout, 1SV239TPH3F application, or 1SV239TPH3F equivalent, key selection criteria include UHF tuning linearity, low-loss RF impedance matching, compact footprint suitability for portable radios, and thermal stability in temperature-sensitive oscillator designs.

Technical Context

This varactor diode operates by modulating junction capacitance via applied reverse bias voltage-enabling precise frequency tuning in resonant LC tanks. Its epitaxial planar structure ensures reproducible C-V characteristics and low series resistance critical for high-Q UHF tank circuits.

The device exhibits a defined capacitance ratio of 2.0–2.4 across 2–10 V reverse bias, with guaranteed leakage current ≤3 nA at 15 V and junction temperature limit of 125°C-supporting stable operation in battery-powered handheld transceivers and miniature wireless modules.

Key Specifications

ParameterValue and Actual Design Meaning
Capacitance @ 2 V4.25 pF (typ.) - sets center frequency and tuning range in 300–1000 MHz VCOs
Capacitance @ 10 V1.75 pF (typ.) - defines minimum capacitance for upper-frequency limit in tuning band
Capacitance Ratio C₂ᵥ/C₁₀ᵥ2.4 (max) - determines achievable frequency tuning bandwidth in fixed-inductor VCOs
Series Resistance rₛ0.44 Ω (typ.) at 470 MHz - minimizes insertion loss and phase noise degradation in RF tank circuits
Max Reverse Voltage Vᵣ15 V - sets absolute upper limit for tuning voltage swing without breakdown
Reverse Leakage Iᵣ≤3 nA at 15 V - ensures negligible DC power draw and long-term bias stability in battery-operated systems

Pinout & Package

1SV239TPH3F is supplied in the ultra-compact SOD-323 (SC-76) surface-mount package, measuring 1.7 × 1.3 × 0.9 mm, with cathode marked by a band. The device has two terminals: anode and cathode - no internal connections or auxiliary pins.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward-biased terminal (not used in varactor mode)Connected to ground or AC-grounded node in reverse-biased tuning configuration
CathodeReverse-biased terminal (capacitive node)Connected to tuning voltage source and RF tank node; polarity must be observed to avoid forward conduction

Key Features

FeatureDesign Value
Ultra-low series resistancerₛ = 0.44 Ω enables high-Q tank performance and reduced VCO phase noise at UHF
Controlled C-V slopeC₂ᵥ/C₁₀ᵥ = 2.4 supports predictable 2:1 frequency span in fixed-L VCO topologies
Miniature SOD-323 footprint1.7 × 1.3 mm outline allows integration into space-constrained portable radio PCBs
Low leakage currentIᵣ ≤ 3 nA preserves tuning voltage integrity over time and temperature in battery-powered systems

Applications

UHF Handheld TransceiversISM Band Wireless Sensors

Use Scenario: Compact 433/868 MHz FSK transceivers in industrial remote controls and telemetry units.

IC Role / Device Role / Timing Role: Varactor diode providing voltage-tuned resonance in Colpitts VCO core.

Use Value: Enables 15–20 MHz tuning bandwidth with <0.5° RMS phase noise contribution at 10 kHz offset.

Use Scenario: Low-power 915 MHz sensor nodes operating on coin-cell batteries for >5 years.

IC Role / Device Role / Timing Role: Tuning element in integrated VCO matching network for ASK/OOK modulation.

Use Value: Sub-1 nA leakage and 0.44 Ω rₛ extend battery life and maintain frequency accuracy across −20°C to +70°C.

FM Radio Tuner ModulesTest Equipment Local Oscillators

Use Scenario: Miniaturized FM broadcast receivers (76–108 MHz) in automotive infotainment head units.

IC Role / Device Role / Timing Role: Fine-tuning capacitor in PLL-based synthesizer front-end VCO.

Use Value: Stable C-V curve ensures ±5 kHz channel spacing accuracy under supply ripple and thermal drift.

Use Scenario: Bench-grade signal generators requiring fast, repeatable frequency sweeps up to 1 GHz.

IC Role / Device Role / Timing Role: Primary tuning diode in high-stability YIG-less VCO design.

Use Value: 2.4:1 capacitance ratio and low rₛ support <100 μs settling time during sweep transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar varactor diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BBY52-02WC₂ᵥ/C₁₀ᵥ = 2.2 (typ.), rₛ = 0.55 Ω, C₂ᵥ = 3.6 pF - slightly lower capacitance and higher lossOptimized for 800–2000 MHz; less suitable below 400 MHz due to Q degradationPrefer when targeting higher-frequency bands (>1 GHz) and tighter tolerance on C-V linearity
SMV1232-011C₂ᵥ = 4.5 pF, C₁₀ᵥ = 1.6 pF, rₛ = 0.40 Ω - marginally better rₛ but narrower C ratio (2.8)Designed for broadband cellular PA tuning; higher cost and longer lead timeConsider only if sub-0.42 Ω rₛ and RoHS-6 compliance are mandatory for production release

Compared with BBY52-02W and SMV1232-011, the 1SV239TPH3F delivers optimal balance of UHF capacitance range, ultra-low rₛ, and proven reliability in consumer radio designs-making it preferred for cost-sensitive, high-volume 300–900 MHz VCO implementations where thermal stability and long-term leakage control are critical.

Availability

1SV239TPH3F is available at Aetrix Electronics and suitable for UHF VCOs, portable radio tuners, and ISM-band wireless sensor nodes requiring stable component supply, consistent parametric binning, and traceable lot-level documentation.

Supply support for 1SV239TPH3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on efficiency, miniaturization, and reliability for consumer, industrial, and communications markets.

The 1SV239TPH3F belongs to Toshiba's legacy varactor diode product line, engineered specifically for analog RF tuning in compact UHF radio systems where size, low loss, and thermal robustness are primary constraints.

FAQ

What is the maximum reverse voltage rating for the 1SV239TPH3F?

The 1SV239TPH3F has an absolute maximum reverse voltage rating of 15 V at Ta = 25°C. Exceeding this voltage risks junction breakdown and permanent device failure. Derating is recommended above 25°C per Toshiba's reliability guidelines, and operation should remain within the specified 2–10 V tuning range for optimal C-V linearity and longevity.

Does the 1SV239TPH3F have a specified capacitance tolerance at 2 V reverse bias?

Yes-the 1SV239TPH3F specifies capacitance at 2 V as 3.8–4.7 pF (min–max), with 4.25 pF typical. This ±10% tolerance reflects process variation across production lots and must be accounted for in VCO center-frequency calibration routines and production test limits.

Is the 1SV239TPH3F RoHS compliant?

Yes, the 1SV239TPH3F meets RoHS Directive 2011/65/EU requirements. Toshiba confirms lead-free termination and halogen-free packaging for this part, with full compliance documentation available upon request through authorized distribution channels.

What is the thermal resistance (RθJA) of the 1SV239TPH3F in SOD-323 package?

Toshiba does not publish RθJA for the 1SV239TPH3F. However, based on SOD-323 package thermal characterization and junction-to-case data from comparable Toshiba varactors, typical RθJA is ~450°C/W on standard FR-4 with minimal copper pour. For thermal design, keep power dissipation below 1 mW and ambient temperature within −55°C to +125°C storage limits.

Can the 1SV239TPH3F be used in forward bias?

No-the 1SV239TPH3F is designed exclusively for reverse-bias operation as a voltage-variable capacitor. Forward biasing causes conduction, destroys varactor functionality, and may exceed absolute maximum ratings. Always ensure cathode is at higher potential than anode in circuit layout and bias network design.

1SV239TPH3F Specifications

Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
SC-76, SOD-323
Packaging:
Tape & Reel (TR)
Product Status:
Active
Capacitance @ Vr, F:
2pF @ 10V, 1MHz
Capacitance Ratio:
2.4
Capacitance Ratio Condition:
C2/C10
Voltage - Peak Reverse (Max):
15 V
Diode Type:
Single
Q @ Vr, F:
-
Operating Temperature:
125°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
USC

1SV239TPH3F FAQ

1.How can I place an order for 1SV239TPH3F through Aetrix?

Please submit a Request for Quotation (RFQ) for 1SV239TPH3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1SV239TPH3F reliable?

The price and inventory of 1SV239TPH3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1SV239TPH3F is usually 5 days.

3.What payment methods are accepted for 1SV239TPH3F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1SV239TPH3F transactions.

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4.How is shipping managed for 1SV239TPH3F?

1SV239TPH3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1SV239TPH3F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1SV239TPH3F?

For technical support, including 1SV239TPH3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1SV239TPH3F requirements.

6.How does Aetrix verify that 1SV239TPH3F is sourced from the original manufacturer or authorized distributors?

All 1SV239TPH3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1SV239TPH3F meets industry standards.

7.What is the process for return or replacement of 1SV239TPH3F?

All 1SV239TPH3F units undergo pre-shipment inspection (PSI). If there is an issue with 1SV239TPH3F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1SV239TPH3F part is unused and in its original packaging.

Return procedure for 1SV239TPH3F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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