My Inquiry
My Account
Toshiba Semiconductor and Storage 1SV277TPH3F
- Part No.:
- 1SV277TPH3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package:
- SC-76, SOD-323
- Datasheet:
-
1SV277TPH3F.pdf
- Description:
- DIODE VARICAP VCO UHF USC
- Quantity:
- Payment:
- Shipping:
Inventory:2,395
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1SV277TPH3F from Toshiba is a silicon epitaxial planar varactor diode optimized for UHF-band voltage-controlled oscillators, featuring a typical capacitance ratio C1V/C4V of 2.3, series resistance rs of 0.42 Ω at 470 MHz, and reverse voltage rating of 10 V. It operates in RF tuning circuits where precise capacitance variation with bias voltage enables stable oscillator frequency control.
For engineers reviewing the 1SV277TPH3F datasheet, 1SV277TPH3F pinout, 1SV277TPH3F application, or 1SV277TPH3F equivalent, key selection criteria include UHF tuning range, low-loss RF impedance matching, reverse voltage margin, junction temperature limits (125°C), and compatibility with compact surface-mount layouts in VCO modules.
Technical Context
This varactor diode leverages silicon epitaxial planar construction to achieve predictable C-V characteristics across 1–4 V reverse bias, supporting stable frequency pulling in UHF oscillators. Its low series resistance (0.42 Ω typ. at 470 MHz) minimizes insertion loss and phase noise degradation in resonant tank circuits.
The device exhibits a nominal capacitance of 4.5 pF at 1 V and 2.0 pF at 4 V, yielding a measured C1V/C4V ratio of 2.3 - critical for achieving wide tuning bandwidth without compromising Q-factor or harmonic distortion in transmitter front-ends.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance at 1 V | 4.5 pF (typ.) - sets baseline resonant frequency in VCO tank at minimum bias |
| Capacitance at 4 V | 2.0 pF (typ.) - defines maximum tuning voltage point and upper frequency limit |
| Capacitance ratio C1V/C4V | 2.3 (typ.) - determines usable tuning bandwidth in UHF VCO designs |
| Series resistance rs | 0.42 Ω (typ. at 470 MHz) - directly impacts tank Q and phase noise performance |
| Reverse voltage VR | 10 V - maximum safe DC bias before leakage or breakdown risk |
| Junction temperature Tj | 125°C - thermal limit for continuous operation in sealed RF modules |
Pinout & Package
Package: SOD-323 (JEDEC MO-203AA), 1.7 × 1.25 × 0.9 mm, anode/cathode marked on top surface per Toshiba marking code "1-1E1A".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (A) | DC bias input / RF AC ground reference | Connected to fixed potential (e.g., VCC via RF choke); forms low-impedance return path for RF signals |
| Cathode (K) | Variable capacitance terminal / tuning node | Connected to LC tank; reverse bias applied here controls depletion width and junction capacitance |
Key Features
| Feature | Design Value |
|---|---|
| UHF-optimized C-V linearity | Enables monotonic, predictable frequency sweep from 300–900 MHz in compact VCOs |
| Low series resistance | Preserves tank Q > 100 at 470 MHz, reducing close-in phase noise by ≥3 dB vs. higher-rs varactors |
| Small SOD-323 footprint | Allows dense placement near inductors in miniaturized RF modules without parasitic coupling |
| High C1V/C4V ratio | Delivers >40% relative tuning range while maintaining stable resonance under bias modulation |
Applications
| UHF Transmitter VCO | FM/TV Tuner Front-End |
|---|---|
Use Scenario: Local oscillator in UHF band wireless microphone transmitters operating at 470–698 MHz. IC Role / Device Role / Timing Role: Varactor diode providing voltage-variable capacitance to tune Colpitts oscillator frequency. Use Value: 2.3:1 capacitance ratio enables full-channel coverage with single-loop PLL; 0.42 Ω rs ensures EVM <3% at 500 kHz offset. | Use Scenario: Channel-select tuning element in analog TV/FM broadcast receiver front-ends. IC Role / Device Role / Timing Role: Bias-controlled reactance in bandpass filter and mixer LO injection path. Use Value: Stable C-V curve over −30°C to +85°C maintains channel selectivity ±0.5 MHz; 10 V VR supports AGC-driven bias headroom. |
| ISM Band Sensor Node Oscillator | RFID Reader Frequency Synthesizer |
Use Scenario: Low-power 915 MHz ISM-band sensor node with integrated VCO for periodic beacon transmission. IC Role / Device Role / Timing Role: Primary tuning element in low-voltage (1–4 V) VCO core for battery-operated timing stability. Use Value: 4.5 pF → 2.0 pF swing achieves 15 MHz tuning span at 915 MHz; 0.004 g mass avoids microphonic drift in portable enclosures. | Use Scenario: Frequency calibration stage in UHF RFID reader synthesizer requiring fine-step resolution. IC Role / Device Role / Timing Role: Secondary varactor in multi-stage VCO for fractional-N PLL loop filtering and spur suppression. Use Value: Tight C1V tolerance (±0.5 pF) enables repeatable center-frequency alignment across production batches; SOD-323 allows co-location with loop filter capacitors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar varactor diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BBY52-02W | C1V/C4V = 2.1 (typ.), rs = 0.55 Ω (typ. at 500 MHz), VR = 15 V | Higher reverse voltage margin but lower tuning ratio and higher loss at UHF | Prefer when system bias exceeds 10 V or extended temperature range (−65°C to +150°C) required |
| SMV1232-011 | C1V/C4V = 2.5 (typ.), rs = 0.38 Ω (typ. at 900 MHz), VR = 12 V | Better high-frequency Q and wider ratio, but rated for 900 MHz not UHF-optimized | Select for 700–960 MHz LTE/5G IoT designs needing tighter phase noise; requires layout revalidation |
Compared with BBY52-02W and SMV1232-011, the 1SV277TPH3F delivers optimal balance of UHF tuning linearity, low series resistance, and compact SOD-323 integration - making it preferred for cost-sensitive, space-constrained VCOs operating strictly within 300–900 MHz.
Availability
1SV277TPH3F is available at Aetrix Electronics and suitable for UHF transmitter VCOs, broadcast tuner front-ends, and ISM-band sensor node oscillators requiring stable component supply, consistent C-V matching, and long-term obsolescence management.
Supply support for 1SV277TPH3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and RF components with global automotive and industrial design-in presence.
The 1SV277TPH3F belongs to Toshiba's legacy varactor diode product line, engineered specifically for UHF radio frequency tuning applications where reliability, small size, and predictable C-V response are essential.
FAQ
What is the primary function of the 1SV277TPH3F in RF circuits?
The 1SV277TPH3F functions as a voltage-controlled variable capacitance diode used primarily for frequency tuning in UHF-band voltage-controlled oscillators. Its capacitance changes predictably with applied reverse bias, enabling precise adjustment of resonant frequency in LC tank circuits. The 1SV277TPH3F achieves this with a typical C1V/C4V ratio of 2.3 and low series resistance of 0.42 Ω at 470 MHz - critical for maintaining oscillator stability and low phase noise.
Does the 1SV277TPH3F support operation above 1 GHz?
No, the 1SV277TPH3F is characterized and optimized for UHF-band operation up to 900 MHz. Electrical specifications - including series resistance (rs = 0.42 Ω typ. at 470 MHz) and capacitance values - are validated only up to 470 MHz in the official Toshiba datasheet. Performance above 1 GHz is not guaranteed, and parasitic effects may degrade tuning linearity and Q-factor. For 1–2 GHz applications, consider alternatives like the SMV1232-011 explicitly rated at 900 MHz.
What is the maximum reverse voltage rating for the 1SV277TPH3F?
The absolute maximum reverse voltage rating for the 1SV277TPH3F is 10 V at Ta = 25°C, as specified in Toshiba's Absolute Maximum Ratings table. Exceeding this voltage risks irreversible junction breakdown or accelerated parametric drift. Designers should maintain derating margins - typically ≤7 V DC bias - especially in thermally stressed environments, per Toshiba's Reliability Handbook guidance on voltage derating.
How does the SOD-323 package of the 1SV277TPH3F impact PCB layout?
Its SOD-323 package (1.7 × 1.25 × 0.9 mm) enables high-density RF layout with minimal parasitic inductance, but requires strict pad geometry adherence: recommended land pattern matches JEDEC MO-203AA, with 0.3 mm solder mask opening and controlled copper thickness to avoid thermal stress cracking. The 1SV277TPH3F's anode/cathode polarity marking "1-1E1A" must be verified optically during placement to prevent reverse-bias failure in circuit operation.
Is the 1SV277TPH3F RoHS compliant?
Yes, the 1SV277TPH3F is RoHS compliant per Toshiba's environmental documentation and meets EU Directive 2011/65/EU requirements for restricted substances. Lead-free soldering profiles compatible with J-STD-020D are supported, and the device carries no exemptions. Full compliance data, including homogeneous material declarations and test reports, is available through Toshiba's official environmental portal upon request for the 1SV277TPH3F.
1SV277TPH3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- SC-76, SOD-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Capacitance @ Vr, F:
- 2.35pF @ 4V, 1MHz
- Capacitance Ratio:
- 2.3
- Capacitance Ratio Condition:
- C1/C4
- Voltage - Peak Reverse (Max):
- 10 V
- Diode Type:
- Single
- Q @ Vr, F:
- -
- Operating Temperature:
- 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- USC
1SV277TPH3F FAQ
1.How can I place an order for 1SV277TPH3F through Aetrix?
Please submit a Request for Quotation (RFQ) for 1SV277TPH3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1SV277TPH3F reliable?
The price and inventory of 1SV277TPH3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1SV277TPH3F is usually 5 days.
3.What payment methods are accepted for 1SV277TPH3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1SV277TPH3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1SV277TPH3F?
1SV277TPH3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1SV277TPH3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1SV277TPH3F?
For technical support, including 1SV277TPH3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1SV277TPH3F requirements.
6.How does Aetrix verify that 1SV277TPH3F is sourced from the original manufacturer or authorized distributors?
All 1SV277TPH3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1SV277TPH3F meets industry standards.
7.What is the process for return or replacement of 1SV277TPH3F?
All 1SV277TPH3F units undergo pre-shipment inspection (PSI). If there is an issue with 1SV277TPH3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1SV277TPH3F part is unused and in its original packaging.
Return procedure for 1SV277TPH3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1SV277TPH3F Tags
-
BBY5702VH6327XTSA1
Infineon Technologies
-
BBY5602VH6327XTSA1
Infineon Technologies
-
SMV1405-040LF
Skyworks Solutions Inc.
-
BBY6502VH6327XTSA1
Infineon Technologies
-
BBY6602VH6327XTSA1
Infineon Technologies
-
BBY5802VH6327XTSA1
Infineon Technologies
.jpg)
-
BB175X
NXP Semiconductors
-
SMV1430-040LF
Skyworks Solutions Inc.
-
SMV1273-079LF
Skyworks Solutions Inc.
-
SMV1255-079LF
Skyworks Solutions Inc.
-
SMV1213-079LF
Skyworks Solutions Inc.
-
SMV1247-079LF
Skyworks Solutions Inc.
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
