Toshiba Semiconductor and Storage 1SV304TPH3F

Overview

1SV304TPH3F from Toshiba is a silicon epitaxial planar varactor diode optimized for VHF-band voltage-controlled oscillators (VCOs), featuring a typical capacitance ratio C1V/C4V of 3.0, series resistance rs of 0.27 Ω at 470 MHz, and nominal capacitance of 18.3 pF at 1 V reverse bias.

For engineers reviewing the 1SV304TPH3F datasheet, 1SV304TPH3F pinout, 1SV304TPH3F application, or 1SV304TPH3F equivalent, key selection criteria include VHF tuning range, low RF loss in oscillator tank circuits, thermal stability up to 125°C junction temperature, and compatibility with compact SOD-323 surface-mount layouts.

Technical Context

This varactor diode operates by varying junction capacitance under reverse bias, enabling frequency tuning in resonant LC tanks. Its epitaxial planar structure ensures stable C-V characteristics and low series resistance across 30–300 MHz VHF bands.

The device exhibits a defined capacitance ratio (C1V/C4V ≥ 2.8) and tight capacitance tolerance (±1.0 pF at 1 V), supporting predictable oscillator center-frequency shift and phase-noise performance in radio front-end designs.

Key Specifications

Pinout & Package

Package: SOD-323 (JEDEC DO-213AA), 1.7 × 1.3 × 0.9 mm, anode-cathode dual-terminal surface-mount package with cathode band marking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar varactor diode applications.

Compared with BBY52-02W and SMV2023-011, the 1SV304TPH3F offers balanced VHF performance: mid-range capacitance (18.3 pF), industry-standard 3.0 ratio, and proven thermal reliability up to 125°C - making it ideal for cost-sensitive, production-grade VHF radio modules where consistency and manufacturability are prioritized.

Availability

1SV304TPH3F is available at Aetrix Electronics and suitable for VHF FM transceivers, AM broadcast receivers, two-way radio synthesizers, and RF test equipment requiring stable component supply and long-lifecycle support.

Supply support for 1SV304TPH3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and discrete components with global automotive and industrial certifications.

The 1SV304TPH3F belongs to Toshiba's legacy varactor diode product line, engineered specifically for analog RF tuning in consumer and professional VHF radio equipment since 1997.

FAQ

What is the primary function of the 1SV304TPH3F in RF circuits?

The 1SV304TPH3F functions as a voltage-controlled variable capacitor (varactor diode) in RF tuning circuits. Its junction capacitance changes with applied reverse bias voltage, enabling frequency control in VHF-band oscillators and filters. The 1SV304TPH3F achieves this with a typical C1V/C4V ratio of 3.0 and low series resistance of 0.27 Ω, directly supporting stable, low-phase-noise VCO operation.

Does the 1SV304TPH3F require forward biasing during normal operation?

No, the 1SV304TPH3F must be operated under reverse bias only. Forward biasing exceeds its 10 V reverse voltage rating and risks permanent damage. In all functional applications - including VCO tuning and RF filtering - the 1SV304TPH3F is reverse-biased between 1 V and 4 V to exploit its controlled capacitance variation while maintaining low leakage (<3 nA at 10 V).

What is the significance of the "TPH3F" suffix in 1SV304TPH3F?

The "TPH3F" suffix denotes Toshiba's tape-and-reel packaging specification: TPH indicates embossed carrier tape per EIA-481, "3" specifies 3 mm tape width, and "F" identifies the SOD-323 package variant with cathode band marking. This packaging ensures automated placement compatibility and traceable lot control - critical for high-volume 1SV304TPH3F deployment in radio manufacturing.

Can the 1SV304TPH3F be used in UHF applications above 300 MHz?

The 1SV304TPH3F is characterized up to 470 MHz for series resistance (rs = 0.27 Ω typ.), but its capacitance and Q-factor degrade above 300 MHz due to parasitic inductance and package limitations. While functional in some UHF prototypes, Toshiba specifies the 1SV304TPH3F for VHF-band use (30–300 MHz); for reliable UHF operation, alternatives like SMV2023-011 are recommended.

How does the 1SV304TPH3F's thermal rating impact system-level design?

The 1SV304TPH3F's 125°C maximum junction temperature allows uninterrupted operation in sealed VHF transceiver enclosures or near power amplifiers without forced cooling. Designers must ensure PCB copper area and thermal vias limit junction rise to ≤125°C under worst-case RF drive and ambient conditions - validated using Toshiba's published thermal resistance data and the 1SV304TPH3F's 0.004 g mass for transient thermal modeling.