Toshiba Semiconductor and Storage 1SV305,H3F

Overview

1SV305,H3F from TOSHIBA is a silicon epitaxial planar varactor diode optimized for VHF-band voltage-controlled oscillator (VCO) tuning circuits, featuring C1V = 18.3 pF (typ.) at 1 V, C1V/C4V = 3.0 (typ.), rs = 0.27 Ω (typ.) at 470 MHz, and VR(max) = 10 V. It operates in consumer radio transceivers requiring stable capacitance variation with low loss.

For engineers reviewing the 1SV305,H3F datasheet, 1SV305,H3F pinout, 1SV305,H3F application, or 1SV305,H3F equivalent, key selection criteria include VHF tuning range, capacitance ratio linearity, series resistance impact on Q-factor, reverse voltage margin, and SOD-323 package thermal and layout constraints.

Technical Context

This varactor diode uses a silicon epitaxial planar structure to achieve precise junction capacitance control across 1–4 V reverse bias. Its C–V curve is engineered for monotonic, predictable tuning in VHF oscillators, with minimal process-induced dispersion in C1V and C4V values.

The low 0.27 Ω typical series resistance directly supports high unloaded Q (>100 at 470 MHz), critical for narrow-band VCO phase noise performance. The 10 V absolute maximum reverse voltage rating defines safe DC bias headroom in tuned amplifier and filter applications.

Key Specifications

Pinout & Package

Package: SOD-323 (JEDEC DO-216AA), surface-mount, 2-terminal cathode-anode configuration, 1.7 × 1.3 × 0.9 mm, 0.0014 g typical weight.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar varactor diode applications.

Compared with BBY52-02W and SMV1232-011, the 1SV305,H3F offers the best balance of C1V/C4V ratio and series resistance for VHF VCOs demanding both wide tuning and low phase noise-making it preferred for FM radio and professional portable radio front-ends.

Availability

1SV305,H3F is available at Aetrix Electronics and suitable for VHF radio transceivers, wireless microphones, portable two-way radios, and tunable bandpass filters requiring stable component supply and consistent C–V characteristics across production lots.

Supply support for 1SV305,H3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and analog components with emphasis on reliability and industrial-grade performance.

The 1SV305,H3F belongs to Toshiba's legacy RF varactor diode product line, designed specifically for VHF tuning in cost-sensitive, high-volume consumer and professional radio equipment.

FAQ

What is the primary function of the 1SV305,H3F in RF circuits?

The 1SV305,H3F functions as a voltage-controlled variable capacitance diode (varactor), used primarily to tune resonant frequency in VHF-band voltage-controlled oscillators (VCOs). Its capacitance changes predictably with applied reverse bias, enabling electronic frequency adjustment without mechanical components. In the 1SV305,H3F, this behavior is optimized for 88–216 MHz applications with low series resistance and high C1V/C4V ratio.

What does the marking "H3F" indicate for the 1SV305,H3F?

The "H3F" suffix in 1SV305,H3F denotes Toshiba's internal packaging and testing variant: SOD-323 package, tape-and-reel delivery (3,000 pcs/reel), and compliance with standard industrial reliability screening per Toshiba Semiconductor Reliability Handbook. It is not a functional revision but a logistics and quality bin identifier tied to the 1SV305 die.

Can the 1SV305,H3F be used above 216 MHz?

The 1SV305,H3F is characterized up to 470 MHz for series resistance, but its C–V performance and Q-factor degrade above 216 MHz due to parasitic inductance and junction limitations. While usable in limited 433 MHz ISM-band applications, Toshiba specifies the 1SV305,H3F for VHF (30–300 MHz), with optimal performance between 88–216 MHz. For UHF designs, consider purpose-built variants like the 1SV312.

How does the 1SV305,H3F's series resistance affect VCO phase noise?

The 1SV305,H3F's typical series resistance of 0.27 Ω directly impacts tank circuit Q-factor: lower rs yields higher Q, reducing Leeson-effect upconversion of flicker noise into close-in phase noise. At 144 MHz, this rs value supports Q > 120, enabling VCO phase noise ≤ –110 dBc/Hz at 10 kHz offset-critical for narrowband FM and digital voice radios using the 1SV305,H3F.

Is the 1SV305,H3F RoHS compliant?

Yes, the 1SV305,H3F is RoHS compliant per EU Directive 2011/65/EU, with lead-free solderability and halogen-free molding compound. Toshiba confirms compliance in its official environmental data sheets dated post-2006, and the device carries the "Pb-free" marking on reel labels. Aetrix Electronics supplies only RoHS-compliant lots of the 1SV305,H3F.