Toshiba Semiconductor and Storage 1SV323,H3F

Overview

1SV323,H3F from Toshiba is a silicon epitaxial planar varactor diode optimized for voltage-controlled oscillator (VCO) and TCXO tuning circuits, featuring a typical capacitance ratio C1V/C4V of 4.3, series resistance rs of 0.4 Ω at 100 MHz, and C1V = 27.5 pF (typ.) at 1 V reverse bias - enabling compact tuner designs in UHF/VHF RF front-ends.

For engineers reviewing the 1SV323,H3F datasheet, 1SV323,H3F pinout, 1SV323,H3F application, or 1SV323,H3F equivalent, key selection criteria include tunable capacitance range (6.0–29.5 pF), low-loss RF performance up to 100 MHz, and operation within −55°C to +125°C storage temperature range under 10 V max reverse voltage.

Technical Context

This varactor diode operates by varying junction capacitance with applied reverse voltage, supporting precise frequency tuning in oscillator and filter circuits. Its epitaxial planar structure ensures stable C-V characteristics and low series resistance critical for high-Q resonant tank design.

The device is rated for 10 V maximum reverse voltage and 125°C junction temperature, with leakage current limited to 3 nA at VR = 10 V. Capacitance is measured at 1 MHz with 500 mVrms signal level, confirming suitability for VHF/UHF band applications.

Key Specifications

Pinout & Package

Package: Ultra-small surface-mount SOD-323 (1.7 × 1.3 × 0.9 mm), JEDEC-compliant, marking "1SV323".

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar varactor diode applications.

Compared with BBY40-02V and SMV1232-011, the 1SV323,H3F delivers optimal balance of tuning range, RF loss, and legacy-compatible SOD-323 packaging - making it preferred for industrial tuner upgrades and cost-sensitive consumer RF modules where footprint reuse is mandatory.

Availability

1SV323,H3F is available at Aetrix Electronics and suitable for UHF TV tuners, VHF radio transceivers, TCXO modules, and FM radio IF filters requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 1SV323,H3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and discrete components with emphasis on reliability and industrial-grade performance.

The 1SV323,H3F belongs to Toshiba's RF varactor diode product line, engineered specifically for analog voltage-controlled tuning in broadcast, communications, and precision timing equipment.

FAQ

What is the maximum reverse voltage rating for the 1SV323,H3F?

The 1SV323,H3F has an absolute maximum reverse voltage rating of 10 V at Ta = 25°C. Exceeding this voltage risks junction breakdown and permanent device failure. Designers must ensure bias networks limit cathode-to-anode voltage to ≤10 V under all operating conditions, including transient spikes and temperature extremes.

Does the 1SV323,H3F support operation at frequencies above 100 MHz?

The 1SV323,H3F series resistance rs is specified at 100 MHz (0.4 Ω typ.), and its C-V characteristics are characterized at 1 MHz. While usable in VHF applications up to ~500 MHz, performance degrades above 200 MHz due to parasitic inductance and package resonance. For >300 MHz use, verify Q-factor and phase noise impact in actual circuit layout.

What is the capacitance value of the 1SV323,H3F at 0 V bias?

The 1SV323,H3F datasheet does not specify capacitance at 0 V reverse bias. Only C1V (at 1 V) and C4V (at 4 V) are guaranteed - 26.5–29.5 pF and 6.0–7.1 pF respectively. Extrapolation to 0 V is unreliable due to nonlinear depletion region behavior; designers should use 1 V as minimum practical tuning voltage.

Is the 1SV323,H3F RoHS compliant?

Yes, the 1SV323,H3F meets EU RoHS Directive requirements. Toshiba confirms lead-free termination and compliant materials per their environmental documentation. No exemptions apply, and the device contains ≤0.1 wt% lead in solderable terminations. Full compliance data is available upon request from Aetrix Electronics.

How does junction temperature affect the 1SV323,H3F capacitance stability?

Junction temperature shifts the 1SV323,H3F capacitance-voltage curve due to semiconductor bandgap and carrier concentration changes. While not quantified in the datasheet, typical silicon varactors exhibit −0.1%/°C C1V drift. For precision TCXO use, combine with temperature-compensated bias voltage or select parts with published tempco data.