Toshiba Semiconductor and Storage 1SV324TPH3F

Overview

1SV324TPH3F from Toshiba is a silicon epitaxial planar varactor diode optimized for voltage-controlled oscillator (VCO) and TCXO tuning circuits, featuring a typical capacitance ratio C1V/C4V = 4.3, series resistance rs = 0.4 Ω at 100 MHz, and 44 pF nominal capacitance at 1 V reverse bias - enabling compact tuner designs in UHF/VHF RF front-ends.

For engineers reviewing the 1SV324TPH3F datasheet, 1SV324TPH3F pinout, 1SV324TPH3F application, or 1SV324TPH3F equivalent, key selection criteria include tunable capacitance range (9.2–49.5 pF), low-loss RF performance up to 100 MHz, reverse voltage rating of 10 V, and suitability for miniature VCO modules requiring high C-ratio stability across temperature.

Technical Context

This varactor diode operates as a voltage-dependent capacitor in resonant tank circuits, where applied reverse bias modulates junction depletion width to adjust oscillation frequency. Its epitaxial planar structure ensures reproducible C-V characteristics and low series resistance critical for phase noise reduction in TCXOs.

The device is rated for continuous operation up to 125°C junction temperature and supports stable tuning over −55°C to +125°C storage range. Capacitance is measured at 1 MHz with 500 mVrms signal level, and reverse current remains ≤3 nA at VR = 10 V - supporting low-power, battery-operated RF systems.

Key Specifications

Pinout & Package

Package: Ultra-small surface-mount SC-79 (SOD-323) package, 1.25 × 0.85 × 0.6 mm, anode/cathode marked per JEITA code 1-1E1A, weight 0.004 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar varactor diode applications.

Compared with BBY52-02W and SVC122-TB-E, the 1SV324TPH3F delivers optimal balance of C-ratio, series resistance, and voltage rating for cost-sensitive UHF tuner and mid-precision TCXO designs - especially where 10 V bias and SC-79 footprint are system constraints.

Availability

1SV324TPH3F is available at Aetrix Electronics and suitable for VHF/UHF tuners, portable GPS receivers, TCXO reference modules, and ISM-band wireless transceivers requiring stable component supply and consistent C-V performance across production batches.

Supply support for 1SV324TPH3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in discrete power devices, analog ICs, and RF components with emphasis on reliability and industrial-grade qualification.

The 1SV324TPH3F belongs to Toshiba's legacy RF varactor diode product line, designed specifically for analog and mixed-signal timing and tuning applications in broadcast, navigation, and wireless infrastructure equipment.

FAQ

What is the maximum reverse voltage rating for the 1SV324TPH3F?

The 1SV324TPH3F has an absolute maximum reverse voltage rating of 10 V at Ta = 25°C. Exceeding this voltage risks irreversible junction breakdown. Designers should maintain derated bias - typically ≤8 V - to ensure long-term reliability under thermal stress or transient conditions, as outlined in Toshiba's Reliability Handbook.

Does the 1SV324TPH3F support operation at frequencies above 100 MHz?

The 1SV324TPH3F specifies series resistance rs = 0.4 Ω at 100 MHz, and its C-V data is characterized up to 1 MHz. While usable in VCOs generating outputs beyond 100 MHz (e.g., 2.4 GHz via harmonic tuning), parasitic inductance and package resonance limit effective RF performance above ~500 MHz; for such cases, dedicated microwave varactors are recommended instead of the 1SV324TPH3F.

How does the capacitance ratio C1V/C4V impact VCO design using the 1SV324TPH3F?

The 1SV324TPH3F's typical C1V/C4V ratio of 4.3 defines the theoretical frequency tuning range (fmax/fmin ≈ √(Cmax/Cmin)) - yielding ~2.07× span. This enables single-varactor VCO architectures without switched capacitor banks, simplifying layout and reducing phase discontinuities during frequency hops in the 1SV324TPH3F-based design.

Is the 1SV324TPH3F RoHS compliant?

Yes, the 1SV324TPH3F meets RoHS Directive 2011/65/EU requirements. Toshiba confirms lead-free termination and halogen-free molding compound per standard product documentation. For full compliance documentation including substance declarations and test reports, contact Aetrix Electronics' technical support referencing the 1SV324TPH3F orderable part number.

What is the thermal resistance (RθJA) of the 1SV324TPH3F in its SC-79 package?

Toshiba does not publish RθJA for the 1SV324TPH3F due to its low-power dissipation nature (Pd < 10 mW under normal bias). Junction temperature rise is negligible in typical VCO applications; thermal design focuses instead on ambient PCB copper area and nearby heat sources. The 1SV324TPH3F's 125°C max Tj rating provides sufficient margin for most RF module environments.