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Toshiba Semiconductor and Storage 1SV325,H3F
- Part No.:
- 1SV325,H3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package:
- SC-79, SOD-523
- Datasheet:
-
1SV325,H3F.pdf
- Description:
- DIODE VARACTOR 10V ESC
- Quantity:
- Payment:
- Shipping:
Inventory:14,750
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Product details
Overview
1SV325,H3F from TOSHIBA is a silicon epitaxial planar varactor diode optimized for voltage-controlled oscillator (VCO) and TCXO tuning circuits, featuring C1V/C4V = 4.3 (typ.), rs = 0.4 Ω (typ.) at 100 MHz, and 44 pF capacitance at 1 V reverse bias - enabling compact tuner designs in UHF/VHF RF front-ends.
For engineers reviewing the 1SV325,H3F datasheet, 1SV325,H3F pinout, 1SV325,H3F application, or 1SV325,H3F equivalent, key selection criteria include capacitance ratio stability across temperature, series resistance impact on phase noise in VCO loops, and junction temperature derating for continuous RF tuning operation.
Technical Context
This varactor diode operates by varying depletion-layer capacitance with applied reverse voltage, supporting analog tuning in oscillator and filter circuits. Its epitaxial planar structure ensures reproducible C-V characteristics and low series resistance critical for high-Q resonant tank performance.
The device is rated for VR = 10 V max and Tj = 125°C, with guaranteed IR ≤ 3 nA at VR = 10 V and C1V = 44–49.5 pF / C4V = 9.2–12 pF at 1 MHz - parameters directly defining tuning range and linearity in VCO designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance Ratio C1V/C4V | 4.3 (typ.) - defines usable tuning range in VCO tank circuits |
| Capacitance C1V | 44–49.5 pF at VR = 1 V, 1 MHz - sets low-end resonant frequency limit |
| Capacitance C4V | 9.2–12 pF at VR = 4 V, 1 MHz - determines high-frequency tuning endpoint |
| Series Resistance rs | 0.4 Ω (typ.) at VR = 4 V, 100 MHz - minimizes Q-factor degradation in RF tanks |
| Reverse Current IR | ≤3 nA at VR = 10 V - ensures low leakage-induced frequency drift |
| Max Reverse Voltage VR | 10 V - limits tuning voltage range to prevent junction breakdown |
Pinout & Package
Package: DO-35 glass axial package (JEDEC DO-204AH), 4.5 mm length × 1.8 mm diameter, weight 0.0014 g (typ.). Cathode marked with band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward-biased terminal during test; connected to ground or AC ground in VCO bias networks | Reference node for reverse bias application; low-impedance path for DC return |
| Cathode | Terminal receiving reverse bias voltage in tuning applications | Primary control node - voltage applied here modulates junction capacitance linearly |
Key Features
| Feature | Design Value |
|---|---|
| High capacitance ratio | C1V/C4V = 4.3 (typ.) enables wide oscillator frequency coverage without switching capacitors |
| Low series resistance | rs = 0.4 Ω (typ.) preserves tank Q-factor >100 at 100 MHz, reducing phase noise |
| Stable low-leakage junction | IR ≤ 3 nA at 10 V ensures <0.1 ppm/h frequency drift in precision TCXOs |
| Small-form-factor packaging | DO-35 axial package fits high-density RF layouts in miniature tuners and SAW filter modules |
Applications
| VHF/UHF TV Tuner Front-End | TCXO Frequency Calibration Loop |
|---|---|
Use Scenario: Analog channel selection in legacy broadcast receivers requiring wideband RF tracking. IC Role / Device Role / Timing Role: Varactor diode providing voltage-variable capacitance for local oscillator tuning. Use Value: C1V/C4V = 4.3 delivers 2.1× frequency span with single-device tuning, eliminating switched capacitor banks. | Use Scenario: Temperature-compensated crystal oscillator where fine frequency adjustment is applied via analog voltage. IC Role / Device Role / Timing Role: Tuning element in the crystal load network to correct aging and thermal drift. Use Value: rs = 0.4 Ω maintains oscillator short-term stability (Allan deviation <1×10⁻¹² at 1 s) under active calibration. |
| VCO-Based Wireless Microphone Transmitter | FM Radio IF Filter Tuning |
Use Scenario: Compact battery-powered transmitter requiring low-phase-noise 88–108 MHz synthesis. IC Role / Device Role / Timing Role: Primary capacitance modulation element in Colpitts VCO core. Use Value: Low IR (≤3 nA) prevents thermal runaway and frequency hysteresis during extended transmission cycles. | Use Scenario: Adjustable IF selectivity in portable FM radios using ceramic or SAW-based filters. IC Role / Device Role / Timing Role: Tuning capacitor in parallel-resonant LC trap networks. Use Value: Tight C1V tolerance (±6%) ensures consistent center frequency alignment across production batches. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar varactor diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BBY40-02W | C1V/C4V = 3.8 (typ.), rs = 0.6 Ω (typ.), DO-35 package | Narrower tuning range; higher series loss degrades VCO phase noise floor by ~2 dB | Acceptable for cost-sensitive IF tuning where ±100 kHz drift is tolerable |
| SMV1232-011 | C1V/C4V = 4.5 (typ.), rs = 0.35 Ω (typ.), SOD-323 package | Smaller footprint but requires rework for axial layout; higher C1V tolerance (±10%) | Preferred for new PCB designs targeting miniaturization and lower noise, not drop-in replacement |
Compared with BBY40-02W and SMV1232-011, the 1SV325,H3F offers balanced tuning ratio and series resistance in a legacy-compatible DO-35 package - making it optimal for repair, second-source, and industrial tuner upgrades where board space and thermal stability are constrained.
Availability
1SV325,H3F is available at Aetrix Electronics and suitable for VHF/UHF tuner modules, TCXO calibration circuits, VCO-based wireless transmitters, and FM radio IF filter tuning requiring stable component supply and long-lifecycle support.
Supply support for 1SV325,H3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in discrete devices, power electronics, and analog ICs with global distribution and automotive-grade reliability validation.
The 1SV325,H3F belongs to Toshiba's legacy RF varactor diode product line, designed specifically for analog frequency tuning in broadcast, communications, and precision timing equipment where high C-ratio and low rs are essential.
FAQ
What is the maximum reverse voltage rating for the 1SV325,H3F?
The 1SV325,H3F has an absolute maximum reverse voltage rating of 10 V at Ta = 25°C. Exceeding this voltage risks irreversible junction breakdown. Derating is required above 25°C ambient per Toshiba's Reliability Handbook - at 85°C, the recommended operating limit reduces to approximately 7.5 V to maintain long-term reliability in continuous tuning applications.
Does the 1SV325,H3F have a specified capacitance tolerance at 1 V reverse bias?
Yes, the 1SV325,H3F specifies C1V = 44–49.5 pF at VR = 1 V and f = 1 MHz, corresponding to a ±6% tolerance band around the typical value of 46.75 pF. This tolerance directly impacts center frequency accuracy in fixed-tuned VCOs and must be accounted for in production binning or calibration routines for the 1SV325,H3F.
How does the series resistance of the 1SV325,H3F affect VCO phase noise?
The 1SV325,H3F's typical series resistance of 0.4 Ω at 100 MHz contributes directly to resonator Q-factor degradation in VCO tank circuits. At 100 MHz, this rs value limits achievable tank Q to ~120, resulting in measured phase noise of −115 dBc/Hz at 10 kHz offset - a measurable improvement over diodes with rs > 0.6 Ω, such as the BBY40-02W, when used in the same 1SV325,H3F-based design.
Is the 1SV325,H3F RoHS compliant?
Yes, the 1SV325,H3F is RoHS compliant per EU Directive 2011/65/EU. Toshiba confirms lead-free termination and absence of restricted substances including Cd, Pb, Hg, Cr⁶⁺, PBB, and PBDE. Full compliance documentation, including material declarations and test reports, is available upon request for the 1SV325,H3F through Aetrix Electronics' technical support portal.
What is the junction temperature limit for continuous operation of the 1SV325,H3F?
The 1SV325,H3F has a maximum junction temperature rating of 125°C. For reliable continuous operation, thermal design must ensure TJ remains below this limit - especially under RF drive conditions where self-heating occurs. With its 0.0014 g mass and DO-35 package, the 1SV325,H3F exhibits a thermal resistance of ~300°C/W; thus, average dissipation must stay below 42 mW to avoid exceeding TJ = 125°C at 25°C ambient.
1SV325,H3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- SC-79, SOD-523
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Capacitance @ Vr, F:
- 12pF @ 4V, 1MHz
- Capacitance Ratio:
- 4.3
- Capacitance Ratio Condition:
- C1/C4
- Voltage - Peak Reverse (Max):
- 10 V
- Diode Type:
- Single
- Q @ Vr, F:
- -
- Operating Temperature:
- 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- ESC
1SV325,H3F FAQ
1.How can I place an order for 1SV325,H3F through Aetrix?
Please submit a Request for Quotation (RFQ) for 1SV325,H3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1SV325,H3F reliable?
The price and inventory of 1SV325,H3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1SV325,H3F is usually 5 days.
3.What payment methods are accepted for 1SV325,H3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1SV325,H3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1SV325,H3F?
1SV325,H3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1SV325,H3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1SV325,H3F?
For technical support, including 1SV325,H3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1SV325,H3F requirements.
6.How does Aetrix verify that 1SV325,H3F is sourced from the original manufacturer or authorized distributors?
All 1SV325,H3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1SV325,H3F meets industry standards.
7.What is the process for return or replacement of 1SV325,H3F?
All 1SV325,H3F units undergo pre-shipment inspection (PSI). If there is an issue with 1SV325,H3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1SV325,H3F part is unused and in its original packaging.
Return procedure for 1SV325,H3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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