Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Integrated Circuits (ICs) > Memory > Memory

Microchip Technology 23AA02M-I/SN

Name: 23AA02M-I/SN
Brand: Microchip Technology
SKU: 23AA02M-I/SN
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: 23AA02M-I/SN

Manufacturer:: Microchip Technology

Category:: Memory

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: 23AA02M-I/SN.pdf

Description:: IC SRAM 2MBIT SPI/QUAD 8SOIC

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:158

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

23AA02M-I/SN from Microchip Technology is a 2-Mbit serial SRAM with SPI/SDI/SQI interface, operating from 1.7V to 3.6V across -40°C to +85°C. It delivers 143 MHz SQI read speed, built-in ECC logic, 256 × 8-bit organization, and supports byte/page/sequential access modes. Used in industrial microcontroller data buffering where low-voltage operation and high-speed nonvolatile-capable memory are required.

For engineers reviewing the 23AA02M-I/SN datasheet, 23AA02M-I/SN pinout, 23AA02M-I/SN application, or 23AA02M-I/SN equivalent, key selection criteria include VCC range (1.7–3.6V), industrial temperature rating, 8-lead SOIC/SN package, ECC-enabled reliability, and dual/quad interface configurability without pin count increase.

Technical Context

The 23AA02M-I/SN implements a tri-mode serial interface: default SPI mode (separate SI/SO), SDI mode (2-wire multiplexed SIO[1:0]), and SQI mode (4-wire multiplexed SIO[3:0]). All modes support clock frequencies up to 143 MHz in SQI and 40 MHz in SPI read operations.

It integrates on-die ECC logic that detects and corrects single-bit errors during reads, latching status in the STATUS register's ECS bit. Page size is user-selectable (32 or 256 bytes) via STATUS register bit 8, and output drive strength/slew rate are configurable for signal integrity optimization.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Size	2048 Kbit (256 × 8-bit organization), enabling compact yet sufficient buffer storage for real-time firmware data logging.
VCC Range	1.7V to 3.6V - supports direct interfacing with 1.8V, 2.5V, and 3.3V microcontrollers without level shifting.
Max Clock Frequency	143 MHz in SQI mode - achieves ~572 MB/s effective throughput (4-bit I/O × 143 MHz), critical for high-bandwidth sensor fusion buffers.
Active Current	3 mA max @ 40 MHz / 3.6V - enables low-power operation in battery-backed or energy-constrained edge nodes.
Standby Current	70 µA typical @ 25°C - minimizes quiescent drain during host sleep cycles in always-on monitoring systems.
Data Retention Voltage	1.0 V minimum - ensures RAM contents survive brown-out events down to ultra-low supply levels before backup activation.
Temperature Range	-40°C to +85°C (Industrial grade) - validated for deployment in factory automation, motor control, and outdoor IoT gateways.

Pinout & Package

23AA02M-I/SN is packaged in an 8-lead SOIC (SN) body per JEDEC MS-012, with 1.27 mm pitch and 5.0 mm × 6.2 mm footprint. Pin 1 is marked by a beveled corner or dot; device orientation follows standard SOIC convention.

Pin/Terminal	Circuit Role	Design Meaning
1 CS	Chip Select Input	Active-low enable: drives device into standby (SO high-Z) when deasserted; required low before any command sequence.
2 SO/SIO1	Serial Output / Dual/Quad I/O	Primary data-out in SPI; bidirectional I/O in SDI/SQI - supports protocol flexibility without hardware redesign.
3 SIO2	Quad I/O Pin	Enabled only in SQI mode; adds second bidirectional data lane to double bandwidth vs. SDI at same clock rate.
4 VSS	Ground Reference	System return path; must be low-impedance and decoupled near VCC pin to suppress switching noise.
5 SI/SIO0	Serial Input / Dual/Quad I/O	Command/address/data input in SPI; bidirectional in SDI/SQI - shares physical trace with SO/SIO1 in dual/quad modes.
6 SCK	Serial Clock Input	Synchronizes all data transfers; supports mode 0 (SCK low idle) and mode 3 (SCK high idle) for host compatibility.
7 HOLD/SIO3	Hold Control / Quad I/O	Pauses ongoing SPI/SDI transfers without resetting state; functions as fourth I/O in SQI mode.
8 VCC	Power Supply	1.7–3.6V input; requires local 100 nF ceramic decoupling capacitor placed within 5 mm of pin.

Key Features

Feature	Design Value
Tri-mode serial interface (SPI/SDI/SQI)	Enables bandwidth scaling from 40 MHz (SPI) to 143 MHz (SQI) using same 8-pin SOIC package - eliminates PCB redesign for performance upgrades.
Built-in ECC logic	Detects and corrects single-bit errors on every read, with latchable ECS bit in STATUS register - reduces system-level error handling overhead in safety-critical logging.
User-selectable page size (32/256 bytes)	Optimizes write efficiency: 32-byte pages suit small packet buffering; 256-byte pages minimize command overhead in bulk firmware updates.
Configurable output drive & slew rate	DRV bits (3-bit) and SR bits (2-bit) allow tuning for trace length, noise margin, and EMI - avoids external termination or buffer ICs.
Zero write time architecture	Eliminates write cycle delays: data written immediately upon clocking - enables deterministic timing for real-time control loop data capture.

Applications

Industrial Data Logger	Smart Sensor Node
Use Scenario: Continuous acquisition of vibration, temperature, and pressure samples at 10 kHz, with timestamped buffering prior to wireless upload. IC Role / Device Role / Timing Role: High-speed, low-voltage serial SRAM serving as circular buffer between ADC controller and host MCU - accepts burst writes via SQI at 143 MHz while MCU processes prior frame. Use Value: 256-byte page writes reduce command overhead by 8× vs. byte mode, enabling sustained 10 kB/s logging without CPU intervention.	Use Scenario: Edge AI inference node with limited power budget, capturing sensor fusion data for local model inference before transmission. IC Role / Device Role / Timing Role: Low-quiescent-current (70 µA) SRAM providing scratchpad memory for neural network intermediate tensors - retains context during MCU deep-sleep cycles. Use Value: 1.7V minimum VCC allows direct connection to buck-boost regulator output, eliminating LDO dropout loss in battery-powered deployments.
PLC I/O Module	Medical Diagnostic Monitor
Use Scenario: Real-time digital I/O state tracking in programmable logic controller modules, requiring deterministic read/write latency and long-term data integrity. IC Role / Device Role / Timing Role: Industrial-grade (–40°C to +85°C) SRAM with on-chip ECC acting as fault-tolerant state register bank - immune to single-event upsets in electrically noisy factory environments. Use Value: ECC correction occurs transparently on read; no software intervention needed, reducing firmware complexity and certification burden.	Use Scenario: Portable ultrasound or ECG monitor capturing high-resolution waveform data during patient exams, requiring reliable short-term storage before transfer to host. IC Role / Device Role / Timing Role: Serial SRAM interfaced via SPI to ARM Cortex-M7 MCU - provides zero-write-time buffering for real-time waveform stitching without dropped samples. Use Value: 143 MHz SQI read speed enables full-frame retrieval in <10 µs, meeting sub-millisecond display update deadlines in clinical UI rendering.

Industrial Data Logger

Smart Sensor Node

Use Scenario: Continuous acquisition of vibration, temperature, and pressure samples at 10 kHz, with timestamped buffering prior to wireless upload.

IC Role / Device Role / Timing Role: High-speed, low-voltage serial SRAM serving as circular buffer between ADC controller and host MCU - accepts burst writes via SQI at 143 MHz while MCU processes prior frame.

Use Value: 256-byte page writes reduce command overhead by 8× vs. byte mode, enabling sustained 10 kB/s logging without CPU intervention.

Use Scenario: Edge AI inference node with limited power budget, capturing sensor fusion data for local model inference before transmission.

IC Role / Device Role / Timing Role: Low-quiescent-current (70 µA) SRAM providing scratchpad memory for neural network intermediate tensors - retains context during MCU deep-sleep cycles.

Use Value: 1.7V minimum VCC allows direct connection to buck-boost regulator output, eliminating LDO dropout loss in battery-powered deployments.

PLC I/O Module

Medical Diagnostic Monitor

Use Scenario: Real-time digital I/O state tracking in programmable logic controller modules, requiring deterministic read/write latency and long-term data integrity.

IC Role / Device Role / Timing Role: Industrial-grade (–40°C to +85°C) SRAM with on-chip ECC acting as fault-tolerant state register bank - immune to single-event upsets in electrically noisy factory environments.

Use Value: ECC correction occurs transparently on read; no software intervention needed, reducing firmware complexity and certification burden.

Use Scenario: Portable ultrasound or ECG monitor capturing high-resolution waveform data during patient exams, requiring reliable short-term storage before transfer to host.

IC Role / Device Role / Timing Role: Serial SRAM interfaced via SPI to ARM Cortex-M7 MCU - provides zero-write-time buffering for real-time waveform stitching without dropped samples.

Use Value: 143 MHz SQI read speed enables full-frame retrieval in <10 µs, meeting sub-millisecond display update deadlines in clinical UI rendering.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
23LCV02M-I/P	14-lead PDIP; includes VBAT pin for battery backup; wider VCC min (2.2V); identical 2-Mbit density and SQI capability.	Required where nonvolatile retention during main power loss is mandatory - e.g., metering or alarm history storage.	Select 23LCV02M-I/P only if external battery backup and 14-lead through-hole mounting are design requirements.
AT25DF041A-SHN-T	4-Mbit SPI NOR Flash (not SRAM); no ECC; 85 MHz max clock; 1.65–3.6V; 8-lead SOIC; lacks SDI/SQI modes.	Suitable for code storage or infrequently updated configuration data - not for high-cycle-count, low-latency RAM use cases.	Choose AT25DF041A-SHN-T only for read-mostly firmware storage; avoid for dynamic data buffering due to erase/write latency and endurance limits.

Compared with 23AA02M-I/SN, 23LCV02M-I/P adds battery backup but requires larger 14-lead packaging and higher minimum VCC, while AT25DF041A-SHN-T trades SRAM performance and endurance for nonvolatile flash density - making 23AA02M-I/SN optimal for high-speed, low-voltage, industrial-grade volatile buffering.

Availability

23AA02M-I/SN is available at Aetrix Electronics and suitable for industrial data loggers, smart sensor nodes, PLC I/O modules, and medical diagnostic monitors requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for 23AA02M-I/SN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology Inc. is a leading provider of microcontrollers, analog, FPGA, and memory solutions, headquartered in Chandler, Arizona, with global manufacturing and support infrastructure.

The 23AA02M belongs to Microchip's serial SRAM product line, designed specifically for industrial and automotive applications demanding high-speed, low-voltage, and ECC-enhanced volatile memory in minimal pin-count packages.

FAQ

What is the maximum clock frequency supported by the 23AA02M-I/SN in SQI mode?

The 23AA02M-I/SN supports up to 143 MHz in SQI mode, enabling quad-data-rate transfers for peak effective throughput. This specification is validated across the full industrial temperature range (-40°C to +85°C) and applies to both read and write operations when configured via the EQIO command. The 23AA02M-I/SN does not support 143 MHz in standard SPI mode - that mode is limited to 40 MHz.

Does the 23AA02M-I/SN include built-in error correction?

Yes, the 23AA02M-I/SN integrates on-die Error Correction Code (ECC) logic that automatically detects and corrects single-bit errors during read operations. The ECC status is latched in the STATUS register's ECS bit, which reads '1' only when correction was applied on the most recent read - providing transparent, hardware-based data integrity without software overhead.

Can the 23AA02M-I/SN operate from a 1.8V supply?

Yes, the 23AA02M-I/SN is fully specified to operate from 1.7V to 3.6V, making it compatible with 1.8V systems. All DC and AC parameters - including 143 MHz SQI timing, ECC functionality, and standby current (70 µA typical) - are guaranteed across this range at industrial temperatures, eliminating need for voltage translation in mixed-supply designs.

What package type does the 23AA02M-I/SN use?

The 23AA02M-I/SN uses an 8-lead SOIC package designated "SN", measuring 5.0 mm × 6.2 mm with 1.27 mm lead pitch. This is the only package offered for the 23AA02M variant (unlike the 23LCV02M, which uses 14-lead packages). The SN package is RoHS-compliant and halogen-free, qualified for surface-mount reflow assembly.

How does the HOLD pin function on the 23AA02M-I/SN?

On the 23AA02M-I/SN, the HOLD/SIO3 pin serves as a hardware pause control in SPI and SDI modes: asserting HOLD low suspends ongoing serial transfers without resetting internal address counters or command state. In SQI mode, it becomes SIO3 - a fourth bidirectional data line. HOLD timing is synchronized to SCK active-low transitions, ensuring deterministic pause/resume behavior critical for interrupt-driven hosts.

23AA02M-I/SN Specifications

Product attributes: Attribute value

Manufacturer:: Microchip Technology

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Active

Programmable:: -

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous

Memory Size:: 2Mbit

Memory Organization:: 256K x 8

Memory Interface:: SPI - Quad I/O

Clock Frequency:: 143 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 7 ns

Voltage - Supply:: 1.7V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

23AA02M-I/SN FAQ

1.How can I place an order for 23AA02M-I/SN through Aetrix?

Please submit a Request for Quotation (RFQ) for 23AA02M-I/SN on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 23AA02M-I/SN reliable?

The price and inventory of 23AA02M-I/SN are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 23AA02M-I/SN is usually 5 days.

3.What payment methods are accepted for 23AA02M-I/SN?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 23AA02M-I/SN transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 23AA02M-I/SN?

23AA02M-I/SN orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 23AA02M-I/SN order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 23AA02M-I/SN?

For technical support, including 23AA02M-I/SN datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 23AA02M-I/SN requirements.

6.How does Aetrix verify that 23AA02M-I/SN is sourced from the original manufacturer or authorized distributors?

All 23AA02M-I/SN products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 23AA02M-I/SN meets industry standards.

7.What is the process for return or replacement of 23AA02M-I/SN?

All 23AA02M-I/SN units undergo pre-shipment inspection (PSI). If there is an issue with 23AA02M-I/SN, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 23AA02M-I/SN part is unused and in its original packaging.

Return procedure for 23AA02M-I/SN:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…