Microchip Technology 23K256T-I/SN

Overview

23K256T-I/SN from Microchip Technology is a 256 Kbit (32,768 × 8-bit) low-power SPI serial SRAM with 32-byte page architecture, 20 MHz max clock frequency, 3 mA read current at 1 MHz, and industrial temperature range (−40°C to +85°C). It operates from 2.7–3.6 V and integrates HOLD functionality for interrupt-safe bus arbitration in microcontroller-based data logging systems.

For engineers reviewing the 23K256T-I/SN datasheet, 23K256T-I/SN pinout, 23K256T-I/SN application, or 23K256T-I/SN equivalent, key selection criteria include SPI timing compliance at 20 MHz, standby current ≤4 µA at +85°C, page/sequential write modes, and SOIC-8 (SN) package compatibility with legacy PCB layouts.

Technical Context

The 23K256T-I/SN implements a true SPI-compatible serial interface with separate SI (MOSI) and SO (MISO) lines, supporting byte, page (32-byte), and sequential read/write operations via STATUS register configuration. Its HOLD pin enables deterministic pause/resume of ongoing transfers without sequence restart.

It uses CMOS technology with internal address pointer auto-increment, wraparound on boundary crossing, and data retention voltage as low as 1.2 V. The device powers up in standby mode and requires CS low-to-high transition to initiate active operation.

Key Specifications

Pinout & Package

23K256T-I/SN is packaged in an 8-lead SOIC (SN) with 150 mil width, JEDEC MS-012AC compliant, lead-free and RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial SRAM applications.

Compared with 23K256T-I/SN, 23LC256-I/SN offers broader voltage flexibility but lacks automotive qualification, while FM25V20A-G trades SRAM's simplicity for F-RAM's endurance and speed-both require validation of HOLD behavior and timing margin compliance in target designs.

Availability

23K256T-I/SN is available at Aetrix Electronics and suitable for industrial data loggers, medical sensor hubs, automotive telematics modules, and smart energy meters requiring stable component supply across extended product lifecycles.

Supply support for 23K256T-I/SN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology Inc. is a leading provider of microcontrollers, analog, FPGA, and memory solutions, headquartered in Chandler, Arizona, with global design and manufacturing operations.

The 23K256T-I/SN belongs to Microchip's 23X256 SPI Serial SRAM family, designed specifically for low-power, high-reliability embedded systems needing simple, robust, and cost-effective nonvolatile buffer memory.

FAQ

What is the maximum clock frequency supported by the 23K256T-I/SN?

The 23K256T-I/SN supports a maximum clock frequency of 20 MHz when operated at VCC = 3.0 V over the industrial temperature range (−40°C to +85°C). This value is confirmed in Table 1-2 of DS22100F, with lower limits (16 MHz, 10 MHz) specified for reduced VCC or extended temperature conditions. At 20 MHz, the device achieves optimal throughput for time-critical data buffering tasks without violating setup/hold timing margins.

Does the 23K256T-I/SN require external pull-up resistors on its SPI lines?

No, the 23K256T-I/SN does not require external pull-up resistors on SI, SO, or SCK. Its inputs meet standard SPI voltage thresholds (VIH ≥ 0.7×VCC, VIL ≤ 0.2×VCC), and SO is actively driven or tri-stated-no open-drain behavior. Pull-ups may be needed only if shared with other devices having different logic families or if long trace lengths introduce noise susceptibility, but they are not mandated by the 23K256T-I/SN datasheet.

How does the HOLD function behave during a write operation in the 23K256T-I/SN?

During an active write operation, asserting HOLD low on the 23K256T-I/SN pauses the transfer immediately after the current byte is latched, placing SI, SO, and SCK in high-impedance states. The internal address pointer and write state are preserved. Resuming requires bringing HOLD high while SCK is low; the device then continues from the exact point of interruption. This behavior is validated in Figure 1-1 and Section 2.5 of DS22100F and applies identically to read and write sequences.

What is the data retention voltage specification for the 23K256T-I/SN?

The 23K256T-I/SN guarantees data retention down to 1.2 V (VDR), as specified in Parameter D011 of Table 1-1 in DS22100F. This means the SRAM retains stored data even when VCC drops to 1.2 V-critical for graceful shutdown during brown-out conditions. Retention is valid across the full industrial temperature range and is periodically sampled per Microchip's quality assurance process.

Is the 23K256T-I/SN pin-compatible with the 23A256 series?

Yes, the 23K256T-I/SN is pin-compatible with the 23A256 series (e.g., 23A256T-I/SN), sharing identical 8-lead SOIC (SN) package dimensions, pinout, and SPI interface signaling. However, they differ in supply voltage range (2.7–3.6 V vs. 1.5–1.95 V), temperature grading (I/E vs. I only), and AC timing parameters-so direct substitution requires verification of VCC compatibility and timing margin analysis in the target system.