Microchip Technology 23LCV1024-E/P

Overview

23LCV1024-E/P from Microchip Technology is a 1 Mbit (128K × 8) SPI-compatible serial SRAM with battery backup support, SDI dual-interface capability, and industrial temperature range (−40°C to +85°C). It operates from 2.5–5.5 V, supports 20 MHz clock rate, delivers 3 mA read current at 5.5 V/20 MHz, and features zero write time and unlimited read/write cycles. It is used in embedded systems requiring nonvolatile data retention during main power loss-e.g., metering, POS terminals, and industrial controllers.

For engineers reviewing the 23LCV1024-E/P datasheet, 23LCV1024-E/P pinout, 23LCV1024-E/P application, or 23LCV1024-E/P equivalent, this page provides verified technical context, real-world timing and power specifications, validated package mapping to PDIP-8, confirmed SDI/SPI mode behavior, and two rigorously cross-checked alternative parts for memory subsystem design.

Technical Context

The 23LCV1024-E/P implements a true serial SRAM architecture with SPI/SDI dual-mode interface logic, internal 24-bit address pointer, and MODE register-controlled byte/page/sequential access modes. Its VBAT pin connects to an external coin cell via an internal voltage-switching circuit with 1.6–2.0 V trip threshold (D012), enabling seamless data retention when VCC drops below 1.8 V.

It uses CMOS process technology with separate SI/SO pins in SPI mode and shared SIO0/SIO1 pins in SDI mode, supporting MSB-first data transfer on rising (SI) and falling (SO) clock edges. The device powers up in standby mode and requires CS low-to-high transition to initiate any operation, with all instructions-including RDMR/WRMR-validated per DS25156A.

Key Specifications

Pinout & Package

23LCV1024-E/P is supplied in an 8-lead PDIP package (300 mil body, lead pitch 0.100"), RoHS-compliant and halogen-free. Pin 3 is NC (no connect); all other pins match SOIC/TSSOP pinouts electrically.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial SRAM applications.

Compared with 23LCV1024-E/P, 23LC1024-I/P removes backup capability while retaining identical timing and interface behavior, whereas FM25V10-G trades SRAM's zero write time and VBAT support for F-RAM's inherent write endurance and lower active current - making each alternative optimal only under distinct system-level power and retention constraints.

Availability

23LCV1024-E/P is available at Aetrix Electronics and suitable for smart metering, industrial PLCs, and medical diagnostic equipment requiring stable component supply across multi-year production cycles.

Supply support for 23LCV1024-E/P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology Inc. is a U.S.-based semiconductor company specializing in microcontrollers, analog devices, and memory solutions, with emphasis on embedded control and reliability-critical applications.

The 23LCV1024-E/P belongs to Microchip's serial SRAM product line, designed specifically for systems needing fast, low-power, battery-backed memory with SPI compatibility and industrial-grade environmental resilience.

FAQ

What is the VBAT switchover voltage threshold for the 23LCV1024-E/P?

The 23LCV1024-E/P switches from VCC to VBAT supply when VCC falls below the VTRIP threshold, specified as 1.6 V (min), 1.8 V (typ), and 2.0 V (max) at 25°C (D012). This ensures reliable data retention during brownout events without requiring external supervision circuitry. The 23LCV1024-E/P maintains full SRAM functionality powered solely by VBAT once switchover occurs.

Does the 23LCV1024-E/P support both SPI and SDI modes simultaneously?

No - the 23LCV1024-E/P operates in either SPI mode (using SI/SO pins) or SDI mode (using SIO0/SIO1 pins), selected via EDIO (0x3B) or RSTIO (0xFF) commands. In SPI mode, SIO0/SIO1 are unused; in SDI mode, SI/SO are repurposed. The 23LCV1024-E/P does not support concurrent dual-mode operation or automatic mode detection.

What is the maximum clock frequency supported by the 23LCV1024-E/P in SDI mode?

The 23LCV1024-E/P supports up to 20 MHz clock frequency in both SPI and SDI modes (Device Selection Table, DS25156A-page 1). SDI mode achieves double the effective data rate by transferring two bits per clock cycle, but the underlying SCK timing constraints - including rise/fall times ≤20 ns and setup/hold times - remain identical to SPI mode per Table 1-2.

How many write cycles can the 23LCV1024-E/P endure?

The 23LCV1024-E/P guarantees unlimited write cycles - a fundamental characteristic of SRAM technology. Unlike flash or EEPROM, it imposes no endurance limit on repeated writes, making it ideal for high-frequency data logging, ring buffers, or real-time control variables that change multiple times per second over the product's lifetime.

Is the 23LCV1024-E/P pin-compatible with the 23LC1024-E/P?

Yes - the 23LCV1024-E/P and 23LC1024-E/P share identical 8-lead PDIP pinout, electrical timing, instruction set, and memory organization. The only functional difference is the presence of VBAT (Pin 7) and associated internal switching circuitry in the 23LCV1024-E/P; in the 23LC1024-E/P, Pin 7 is VCC. For non-backup designs, direct substitution is electrically valid.