Microchip Technology 23LCV1024-E/SN

Overview

23LCV1024-E/SN from Microchip Technology is a 1 Mbit (128K × 8) SPI Serial SRAM with battery backup support, SDI dual-interface capability, and industrial temperature range (−40°C to +85°C). It operates from 2.5–5.5 V, supports 20 MHz clock rate, delivers 3 mA read current at 5.5 V/20 MHz, and enables zero-write-time writes in byte/page/sequential modes - used in embedded data logging, real-time configuration storage, and power-fail-safe memory buffering.

For engineers reviewing the 23LCV1024-E/SN datasheet, 23LCV1024-E/SN pinout, 23LCV1024-E/SN application, or 23LCV1024-E/SN equivalent, key selection criteria include VBAT retention voltage (1.0 V), VTRIP switchover threshold (1.6–2.0 V), SDI mode entry via EDIO command (0x3B), and SOIC-8 package compatibility with legacy PCB footprints.

Technical Context

The 23LCV1024-E/SN implements a true serial SRAM architecture with no internal refresh requirement, supporting unlimited read/write cycles and automatic address incrementing across byte, page (32-byte), and sequential modes. Its dual-mode interface allows standard SPI (SI/SO) or higher-throughput SDI (SIO0/SIO1) operation, selected via EDIO/RSTIO commands.

Internally, it features a dedicated MODE register (bits 7–6 control operation mode) and an analog VBAT switchover circuit with 1.8 V typical trip point (D012), enabling seamless transition to external coin-cell backup when VCC drops below VTRIP - preserving RAM contents without host intervention.

Key Specifications

Pinout & Package

23LCV1024-E/SN is housed in an 8-lead SOIC (3.90 mm body, SN suffix) package with standard 1.27 mm pitch. Pin 3 is NC (no connect); all other pins match Microchip's 23LCV1024 pinout definition.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial SRAM applications.

Compared with 23LC1024-I/SN and FM25V10-G, the 23LCV1024-E/SN uniquely integrates VBAT switchover and retains data down to 1.0 V - making it the only choice among these three for applications requiring guaranteed data persistence during extended power interruption.

Availability

23LCV1024-E/SN is available at Aetrix Electronics and suitable for industrial automation, medical diagnostics, and smart metering applications requiring stable component supply, long-lifecycle support, and guaranteed battery-backed memory retention.

Supply support for 23LCV1024-E/SN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology Inc. is a U.S.-based semiconductor company specializing in microcontrollers, analog devices, and memory solutions for embedded systems.

The 23LCV1024-E/SN belongs to Microchip's serial SRAM product line, designed specifically for applications demanding reliable, low-latency, battery-backed data storage without refresh overhead or wear-out limitations.

FAQ

What is the VBAT voltage range and retention capability of the 23LCV1024-E/SN?

The 23LCV1024-E/SN accepts 1.4–3.6 V on the VBAT pin and guarantees data retention down to 1.0 V (parameter D011). This allows use with common 1.5 V alkaline or lithium coin cells. The internal switchover circuit activates when VCC falls below the VTRIP threshold (1.6–2.0 V), ensuring uninterrupted memory operation during power transitions. The 23LCV1024-E/SN maintains full functionality in VBAT-only mode as long as VBAT ≥ 1.0 V.

How does SDI mode differ from standard SPI mode on the 23LCV1024-E/SN?

SDI (Serial Dual Interface) mode on the 23LCV1024-E/SN uses both SIO0 (Pin 5) and SIO1 (Pin 2) for simultaneous 2-bit data transfer per clock cycle, doubling effective throughput versus standard SPI's single SI/SO lines. Entry requires issuing the EDIO command (0x3B); exit uses RSTIO (0xFF). Unlike SPI, SDI mode requires master-side dual-I/O support and modifies timing constraints - the 23LCV1024-E/SN datasheet specifies distinct AC characteristics for SDI operation.

What are the supported operating modes and how are they configured on the 23LCV1024-E/SN?

The 23LCV1024-E/SN supports Byte, Page, and Sequential modes, controlled by bits 7–6 of the MODE register. Byte mode (00) transfers one byte per CS assertion; Page mode (10) auto-increments within 32-byte boundaries; Sequential mode (01, default) wraps across the full 128K address space. Configuration is done via WRMR instruction (0x01); the current mode can be read using RDMR (0x05). All modes operate with identical pin timing but differ in address pointer behavior.

Is the 23LCV1024-E/SN pin-compatible with other Microchip serial SRAMs like the 23LC1024?

Yes, the 23LCV1024-E/SN is pin-compatible with the 23LC1024-I/SN and 23LC1024-E/SN in SOIC-8 packaging - sharing identical pinout, footprint, and SPI command set. However, Pin 7 (VBAT) is unused (NC) on non-V variants and must be tied to VSS or left floating per their datasheets. Firmware written for 23LC1024 will run unchanged on 23LCV1024-E/SN, but VBAT functionality requires explicit hardware and software integration.

What is the maximum clock frequency and corresponding timing margin for reliable operation of the 23LCV1024-E/SN?

The 23LCV1024-E/SN supports up to 20 MHz clock frequency (FCLK) across its full industrial temperature range (−40°C to +85°C). Key timing margins include 25 ns CS setup (TCSS), 50 ns CS hold (TCSH), and 25 ns data setup (Tsu) - all verified under worst-case conditions with CL = 30 pF. These values ensure robust operation with standard microcontroller SPI peripherals; exceeding 20 MHz risks violating setup/hold windows and causing read/write corruption in the 23LCV1024-E/SN.