My Inquiry
My Account
Microchip Technology 23LCV1024T-E/SN
- Part No.:
- 23LCV1024T-E/SN
- Manufacturer:
- Microchip Technology
- Category:
- Memory
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
23LCV1024T-E/SN.pdf
- Description:
- IC SRAM 1MBIT SPI/DUAL 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:1,652
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
23LCV1024T-E/SN from Microchip Technology is a 1 Mbit (128K × 8) SPI Serial SRAM with battery backup support, SDI dual-I/O capability, and industrial temperature range (–40°C to +85°C). It operates from 2.5V to 5.5V, supports 20 MHz clock rate, delivers 3 mA read current at 5.5V/20 MHz, and features zero write time and unlimited read/write cycles. It is used in embedded systems requiring nonvolatile data retention during main power loss-e.g., metering, POS terminals, and industrial controllers.
For engineers reviewing the 23LCV1024T-E/SN datasheet, 23LCV1024T-E/SN pinout, 23LCV1024T-E/SN application, or 23LCV1024T-E/SN equivalent, key selection criteria include VBAT-supported data retention voltage (1.0 V min), SDI mode entry/exit via EDIO/RSTIO commands, page size (32 bytes), and SOIC-8 (SN) package compatibility with legacy SPI bus layouts.
Technical Context
The 23LCV1024T-E/SN implements a true serial SRAM architecture with an 8-bit instruction register and MSB-first SPI protocol compliance. It supports three configurable access modes-Byte (00), Page (10), and Sequential (01)-via a writable MODE register, enabling flexible memory access granularity without external address latches.
Its dual-interface capability uses shared SI/SO pins as SIO0/SIO1 in SDI mode, doubling effective throughput by transferring two bits per clock cycle. Internal VBAT switchover occurs at a defined VTRIP (1.6–2.0 V), ensuring seamless transition to backup supply when VCC drops below threshold while maintaining full SRAM data integrity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Mbit (128K × 8), enabling compact storage for firmware variables, logging buffers, or configuration tables in space-constrained designs. |
| Interface | SPI-compatible with SDI dual-I/O mode; supports standard SPI (SI/SO/SCK/CS) and accelerated dual-bit transfers using SIO0/SIO1. |
| Max Clock Frequency | 20 MHz - enables up to 2.5 MB/s sequential read throughput in SDI mode, suitable for real-time data buffering. |
| VCC Range | 2.5 V to 5.5 V - interoperable with 3.3 V and 5 V microcontrollers without level-shifting. |
| VBAT Retention Voltage | 1.0 V minimum (VDR) - ensures reliable SRAM data hold with low-capacity coin cells (e.g., CR1220) or supercapacitors. |
| Page Size | 32 bytes - optimizes burst writes while minimizing internal address wrap risk; matches common MCU cache line sizes. |
| Operating Temperature | –40°C to +85°C (Industrial grade) - validated for deployment in outdoor metering, factory automation, and transportation electronics. |
Pinout & Package
23LCV1024T-E/SN is housed in an 8-lead SOIC (3.90 mm body), designated by package code "SN". Pin 3 is NC (No Connect); all other pins are functional and electrically validated per DS25156A.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: CS | Chip Select Input | Active-low enable; places device in Standby (4 µA) when high; required low-to-high transition initiates all operations. |
| 2: SO/SIO1 | Serial Output / SDI Data Line 1 | Outputs data in SPI mode; serves as bidirectional data line 1 in SDI mode (MSB of dual-bit pair). |
| 3: NC | No Connect | Internally unconnected; must be left floating or tied to GND per layout best practice. |
| 4: VSS | Ground Reference | Primary return path for VCC and VBAT supplies; requires low-impedance connection to system ground plane. |
| 5: SI/SIO0 | Serial Input / SDI Data Line 0 | Accepts instructions/addresses/data in SPI mode; serves as bidirectional data line 0 in SDI mode (LSB of dual-bit pair). |
| 6: SCK | Serial Clock Input | Edge-triggered master clock; data latched on rising edge (SI), output updated after falling edge (SO). |
| 7: VBAT | External Backup Supply Input | Provides retention power when VCC < VTRIP (1.6–2.0 V); draws only 1 µA typical at 2.5 V. |
| 8: VCC | Main Power Supply | Core logic and memory array supply; decoupling capacitor (0.1 µF) required within 5 mm of pin. |
Key Features
| Feature | Design Value |
|---|---|
| Unlimited Read/Write Cycles | Enables continuous logging or runtime parameter storage without wear-out concerns-critical for long-life industrial deployments. |
| Zero Write Time | Eliminates wait states after write commands; improves deterministic response in time-critical control loops. |
| SDI Dual-I/O Mode | Doubles effective data rate over standard SPI using same pin count-reduces bus congestion without adding traces or connectors. |
| Battery Backup Support | Preserves volatile SRAM contents during main power failure using external VBAT source; no external controller or EEPROM emulation needed. |
| 32-Byte Page Architecture | Optimizes write efficiency for small packet updates (e.g., sensor samples) while preventing accidental cross-page overwrites. |
Applications
| Smart Energy Metering | Industrial PLC Data Logging |
|---|---|
|
Use Scenario: Storing time-stamped energy consumption data during grid outages or firmware updates. IC Role / Device Role / Timing Role: Volatile SRAM buffer with VBAT-backed retention; acts as primary short-term data store interfaced directly to MCU SPI port. Use Value: Maintains >10 years of hourly usage logs without EEPROM wear leveling or flash endurance management overhead. |
Use Scenario: Capturing sensor inputs and process states in programmable logic controllers during brownouts. IC Role / Device Role / Timing Role: High-speed, low-latency memory for cyclic I/O image buffering; accessed via SPI in Sequential mode. Use Value: Enables uninterrupted operation across 100+ ms power dips using CR1220 coin cell, avoiding costly UPS integration. |
| Point-of-Sale Terminal Configuration | Medical Device Calibration Storage |
|
Use Scenario: Holding terminal-specific settings (tax rates, language, receipt format) that must persist across reboots and power cycles. IC Role / Device Role / Timing Role: Nonvolatile configuration store accessed via Byte/Page mode; updated infrequently but read on every boot. Use Value: Eliminates need for external EEPROM or flash, reducing BOM count and qualification effort while guaranteeing 100% write success. |
Use Scenario: Storing factory-calibrated sensor offsets and gain coefficients in portable diagnostic equipment. IC Role / Device Role / Timing Role: Tamper-resistant, low-power memory for critical calibration constants; backed by VBAT during battery swaps. Use Value: Ensures measurement accuracy remains traceable to NIST standards without recalibration after field maintenance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY14V101QS-SP | 1 Mbit nvSRAM with integrated lithium battery; no external VBAT required; 44-pin TSOP vs. 8-pin SOIC. | Higher integration but larger footprint and fixed battery lifetime (~10 years); no SDI mode. | Choose when board space allows larger package and long-term maintenance-free operation is prioritized over flexibility. |
| FM24V10-G | F-RAM with 1 Mbit density; 3.3 V only; 25 MHz max clock; no VBAT pin-retention powered from VCC alone. | Lower active current (1 mA typ), but no external backup option; limited to 3.3 V systems. | Choose for ultra-low-power 3.3 V designs where VBAT independence simplifies power architecture. |
Compared with CY14V101QS-SP and FM24V10-G, the 23LCV1024T-E/SN offers unique flexibility: external VBAT sourcing enables field-replaceable backup, SOIC-8 footprint minimizes PCB area, and SDI mode provides scalable bandwidth without changing pin count-making it optimal for cost-sensitive, space-constrained industrial designs requiring configurable retention.
Availability
23LCV1024T-E/SN is available at Aetrix Electronics and suitable for smart metering, industrial PLCs, point-of-sale terminals, and medical calibration storage requiring stable component supply across multi-year production cycles.
Supply support for 23LCV1024T-E/SN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology Inc. is a leading provider of microcontroller, analog, FPGA, and memory solutions, headquartered in Chandler, Arizona, with global design and manufacturing operations.
The 23LCV1024T-E/SN belongs to Microchip's serial SRAM product line, engineered specifically for embedded systems needing fast, reliable, battery-backed volatile memory with minimal pin count and seamless SPI integration.
FAQ
What is the VBAT operating voltage range for the 23LCV1024T-E/SN?
The 23LCV1024T-E/SN accepts VBAT between 1.4 V and 3.6 V (D013), with guaranteed data retention down to 1.0 V (VDR, D011). The internal switchover threshold (VTRIP) is 1.6–2.0 V (D012), ensuring reliable handoff from VCC to VBAT during brownouts. This allows use of common 2.0–3.0 V coin cells or supercapacitors without regulation.
Does the 23LCV1024T-E/SN support both SPI and SDI modes simultaneously?
No-the 23LCV1024T-E/SN operates in either standard SPI mode (using SI/SO) or SDI mode (using SIO0/SIO1), selected via EDIO (0x3B) or RSTIO (0xFF) commands. SDI mode must be explicitly entered and exited; the device does not auto-detect interface type. Pin mapping differs between modes, as shown in Figure 3-1 of DS25156A.
What is the maximum supported clock frequency for the 23LCV1024T-E/SN in SDI mode?
The 23LCV1024T-E/SN maintains the same 20 MHz maximum clock frequency (FCLK, Table 1-2) in SDI mode as in SPI mode. Because SDI transfers two bits per clock cycle, effective throughput doubles to ~5 Mbps-enabling faster bulk reads/writes without increasing SCK speed or violating timing margins.
How does the 23LCV1024T-E/SN handle page boundaries during Page Write operations?
In Page Write mode (MODE[7:6] = 10), the 23LCV1024T-E/SN automatically increments its internal address pointer-but wraps to the start of the same 32-byte page upon reaching the page boundary. Writing beyond 32 bytes overwrites earlier data in that page; crossing into the next page requires explicit command restart. This prevents unintended memory corruption across pages.
Is the 23LCV1024T-E/SN RoHS compliant and halogen free?
Yes-the 23LCV1024T-E/SN is Pb-free and RoHS compliant per EU Directive 2011/65/EU, and halogen free per Microchip's Material Declaration (DS25156A, page 1). The SOIC-8 package (SN) uses matte tin (Sn) plating and meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL3) requirements.
23LCV1024T-E/SN Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- SPI - Dual I/O
- Clock Frequency:
- 20 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 2.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
23LCV1024T-E/SN FAQ
1.How can I place an order for 23LCV1024T-E/SN through Aetrix?
Please submit a Request for Quotation (RFQ) for 23LCV1024T-E/SN on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 23LCV1024T-E/SN reliable?
The price and inventory of 23LCV1024T-E/SN are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 23LCV1024T-E/SN is usually 5 days.
3.What payment methods are accepted for 23LCV1024T-E/SN?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 23LCV1024T-E/SN transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 23LCV1024T-E/SN?
23LCV1024T-E/SN orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 23LCV1024T-E/SN order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 23LCV1024T-E/SN?
For technical support, including 23LCV1024T-E/SN datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 23LCV1024T-E/SN requirements.
6.How does Aetrix verify that 23LCV1024T-E/SN is sourced from the original manufacturer or authorized distributors?
All 23LCV1024T-E/SN products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 23LCV1024T-E/SN meets industry standards.
7.What is the process for return or replacement of 23LCV1024T-E/SN?
All 23LCV1024T-E/SN units undergo pre-shipment inspection (PSI). If there is an issue with 23LCV1024T-E/SN, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 23LCV1024T-E/SN part is unused and in its original packaging.
Return procedure for 23LCV1024T-E/SN:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
23LCV1024T-E/SN Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
