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Microchip Technology 23LCV512-E/SN

Part No.:
23LCV512-E/SN
Manufacturer:
Microchip Technology
Category:
Memory
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
Aetrix23LCV512-E/SN.pdf
Description:
IC SRAM 512KBIT SPI/DUAL 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,832

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Product details

Overview

23LCV512-E/SN from Microchip Technology Inc. is a 512-Kbit SPI Serial SRAM with battery backup support, operating across 2.5–5.5 V and delivering up to 20 MHz clock rate in SPI/SDI mode. It features unlimited read/write cycles, zero write time, and industrial temperature range (−40°C to +85°C). Used for nonvolatile data buffering in power-loss-prone embedded systems such as metering and industrial controllers.

For engineers reviewing the 23LCV512-E/SN datasheet, 23LCV512-E/SN pinout, 23LCV512-E/SN application, or 23LCV512-E/SN equivalent, key selection criteria include VBAT retention capability (1.0 V min), SDI dual-I/O compatibility, 32-byte page architecture, standby current (4 µA at +85°C), and SOIC-8 (SN) package compliance with RoHS and halogen-free requirements.

Technical Context

The 23LCV512-E/SN implements a serial SRAM core accessed via SPI-compatible bus with separate SI/SO lines or SDI mode using SIO0/SIO1 pins. Its MODE register (bits 7–6) configures Byte, Page (2048 × 32-byte pages), or Sequential operation - all supporting MSb-first transfers and automatic address incrementing.

Internal voltage switching enables seamless transition to VBAT backup when VCC drops below 1.6–2.0 V (typ. 1.8 V trip point). The device powers on in Standby mode (CS = high), requires no initialization, and maintains data integrity without external refresh or wear leveling logic.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Size512 Kbit (64K × 8-bit organization) - supports full memory access without bank switching
InterfaceSPI/SDI serial interface - enables direct connection to MCU SPI peripherals or firmware-bit-banged I/O
Max Clock Frequency20 MHz - allows high-speed burst transfers up to 2.5 MB/s in SDI mode
VCC Range2.5 V to 5.5 V - compatible with 3.3 V and 5 V logic domains without level shifting
VBAT Retention1.0 V minimum - preserves RAM contents during brownout or main supply failure
Standby Current4 µA at +85°C - enables ultra-low-power operation in battery-backed sleep states
Operating Temp−40°C to +85°C (Industrial grade) - validated for deployment in harsh industrial environments

Pinout & Package

8-lead SOIC (SN) package, 3.90 mm body width, narrow outline, RoHS-compliant matte tin finish. Pin 3 is NC (no connect); VBAT (pin 7) enables external coin-cell backup; CS (pin 1), SCK (pin 6), SI/SIO0 (pin 5), SO/SIO1 (pin 2) support both SPI and SDI modes.

Pin/TerminalCircuit RoleDesign Meaning
CS (Pin 1)Chip Select InputActive-low enable; forces SO into high-impedance when deasserted to allow multi-device SPI bus sharing
SO/SIO1 (Pin 2)Serial Output / SDI Data Line 1Outputs data in SPI mode; serves as second bidirectional data line in SDI mode (MSB-first dual-bit transfers)
NC (Pin 3)No ConnectInternally unconnected; must be left floating or tied to ground per layout best practice
VSS (Pin 4)Ground ReferencePrimary return path for VCC and VBAT supplies; requires low-impedance PCB grounding
SI/SIO0 (Pin 5)Serial Input / SDI Data Line 0Accepts instructions, addresses, and data in SPI mode; serves as first bidirectional data line in SDI mode
SCK (Pin 6)Serial Clock InputSynchronizes all data transfers; rising edge latches input, falling edge updates output
VBAT (Pin 7)External Backup SupplyProvides power to retain SRAM data when VCC falls below 1.6–2.0 V; internal switch manages switchover
VCC (Pin 8)Primary Power SupplySupplies active operation; must be decoupled with ≥0.1 µF ceramic capacitor near pin

Key Features

FeatureDesign Value
Unlimited Read/Write CyclesEliminates endurance concerns in high-frequency logging or configuration storage applications
Zero Write TimeEnables immediate data persistence after CS deassertion - no wait states or polling required
SDI Dual-I/O ModeDoubles effective throughput vs. standard SPI by transferring two bits per clock cycle
Page and Sequential Access ModesReduces command overhead: Page mode auto-increments within 32-byte boundaries; Sequential mode wraps at 64K boundary
Industrial Temperature RangeValidated operation from −40°C to +85°C ensures reliability in uncontrolled ambient deployments

Applications

Smart Energy MeteringIndustrial PLC Data Logging

Use Scenario: Storing tariff schedules, consumption history, and event timestamps during mains power interruptions.

IC Role / Device Role / Timing Role: Nonvolatile SRAM buffer with VBAT retention, preserving critical billing data across extended outages.

Use Value: Guarantees data integrity without EEPROM wear-out or flash write latency; supports real-time updates at 20 MHz SPI speed.

Use Scenario: Capturing sensor readings and control state snapshots in programmable logic controllers during runtime.

IC Role / Device Role / Timing Role: High-speed, low-latency memory buffer interfacing directly with ARM Cortex-M SPI peripherals.

Use Value: Enables deterministic microsecond-scale write response and zero-cycle delay reads - critical for motion control loop timing.

Medical Device Configuration StorageAutomotive Telematics Event Buffering

Use Scenario: Holding calibration parameters, user preferences, and diagnostic logs in portable ultrasound or infusion pumps.

IC Role / Device Role / Timing Role: Battery-backed SRAM providing instant-access, radiation-tolerant storage independent of main system power.

Use Value: Meets IEC 62304 safety requirements for data retention during unexpected shutdown; avoids flash reprogramming risks.

Use Scenario: Capturing CAN bus error frames and GPS position bursts during vehicle crash events or connectivity loss.

IC Role / Device Role / Timing Role: High-reliability circular buffer with guaranteed retention under 12 V battery brownout conditions.

Use Value: Maintains forensic data integrity even when main ECU supply collapses - VBAT sustains memory down to 1.0 V.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
23LC1024-I/SN1 Mbit capacity, identical 2.5–5.5 V range, 20 MHz max clock, same SOIC-8 package and pinoutSupports larger buffer sizes; requires no firmware changes if only addressing depth increasesSelect when >512 Kbit memory is needed without changing PCB layout or driver stack
FM25V20A-GF-RAM technology: 2 Mbit, 2.7–3.6 V only, 40 MHz SPI, no VBAT pin, 10¹⁴ write cyclesLacks battery backup; superior write endurance but narrower voltage window and no SDI modeChoose for ultra-high-write-frequency applications where VBAT is unnecessary and voltage is stable at 3.3 V

Compared with 23LCV512-E/SN, the 23LC1024-I/SN offers double density in identical form factor and interface, while FM25V20A-G trades VBAT support and voltage flexibility for F-RAM's near-infinite endurance and faster writes - making each suitable for distinct power architecture and data-integrity priorities.

Availability

23LCV512-E/SN is available at Aetrix Electronics and suitable for smart metering, industrial PLC data logging, medical device configuration storage, and automotive telematics event buffering requiring stable component supply across long production lifecycles.

Supply support for 23LCV512-E/SN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology Inc. is a leading provider of microcontroller, mixed-signal, analog, and Flash-IP solutions, serving industrial, automotive, consumer, and communications markets with vertically integrated silicon and development tools.

The 23LCV512-E/SN belongs to Microchip's serial SRAM product line, designed specifically for applications demanding fast, reliable, battery-backed memory with minimal firmware overhead and seamless integration into SPI-based embedded systems.

FAQ

What is the VBAT switchover threshold for the 23LCV512-E/SN?

The 23LCV512-E/SN switches to VBAT backup when VCC falls below the VTRIP voltage, specified as 1.6 V (min), 1.8 V (typ), and 2.0 V (max) at 25°C. This ensures uninterrupted SRAM data retention during brownout conditions. The 23LCV512-E/SN maintains data integrity as long as VBAT remains ≥1.0 V, even if VCC drops to 0 V.

Does the 23LCV512-E/SN require initialization before first use?

No, the 23LCV512-E/SN powers on in Standby mode with CS high and requires no initialization sequence. The MODE register defaults to Sequential mode (01), and all memory locations retain their prior values - including after VBAT switchover. The 23LCV512-E/SN is ready for immediate SPI communication upon CS assertion.

Can the 23LCV512-E/SN operate in SDI mode without hardware modifications?

Yes - the 23LCV512-E/SN uses shared pins (SI/SIO0 and SO/SIO1) for SDI operation, requiring only firmware-level EDIO command issuance to enter dual-I/O mode. No PCB changes or external components are needed. The 23LCV512-E/SN supports SDI at up to 20 MHz, doubling effective throughput versus standard SPI.

What is the maximum supported page size for write operations on the 23LCV512-E/SN?

The 23LCV512-E/SN supports 32-byte pages in Page mode. Attempting to write beyond the 32-byte boundary causes the internal address counter to wrap to the start of the same page, overwriting earlier bytes. This behavior is explicitly defined in the datasheet and applies only in Page mode - Sequential mode ignores page boundaries entirely.

Is the 23LCV512-E/SN pin-compatible with other Microchip serial SRAMs in SOIC-8 packaging?

The 23LCV512-E/SN shares identical SOIC-8 (SN) pinout and electrical interface with 23LC1024-I/SN and 23LC256-I/SN, including CS, SCK, SI, SO, VSS, VCC, and VBAT assignments. However, firmware must account for differing memory depth (64K vs. 128K vs. 256K addressing) and absence of VBAT in non-V variants.

23LCV512-E/SN Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous
Memory Size:
512Kbit
Memory Organization:
64K x 8
Memory Interface:
SPI - Dual I/O
Clock Frequency:
20 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
2.5V ~ 5.5V
Operating Temperature:
-40°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

23LCV512-E/SN FAQ

1.How can I place an order for 23LCV512-E/SN through Aetrix?

Please submit a Request for Quotation (RFQ) for 23LCV512-E/SN on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 23LCV512-E/SN reliable?

The price and inventory of 23LCV512-E/SN are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 23LCV512-E/SN is usually 5 days.

3.What payment methods are accepted for 23LCV512-E/SN?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 23LCV512-E/SN transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 23LCV512-E/SN?

23LCV512-E/SN orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 23LCV512-E/SN order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 23LCV512-E/SN?

For technical support, including 23LCV512-E/SN datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 23LCV512-E/SN requirements.

6.How does Aetrix verify that 23LCV512-E/SN is sourced from the original manufacturer or authorized distributors?

All 23LCV512-E/SN products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 23LCV512-E/SN meets industry standards.

7.What is the process for return or replacement of 23LCV512-E/SN?

All 23LCV512-E/SN units undergo pre-shipment inspection (PSI). If there is an issue with 23LCV512-E/SN, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 23LCV512-E/SN part is unused and in its original packaging.

Return procedure for 23LCV512-E/SN:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

23LCV512-E/SN Tags

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