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Microchip Technology 23LCV512T-E/SN
- Part No.:
- 23LCV512T-E/SN
- Manufacturer:
- Microchip Technology
- Category:
- Memory
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
23LCV512T-E/SN.pdf
- Description:
- IC SRAM 512KBIT SPI/DUAL 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,039
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Product details
Overview
23LCV512T-E/SN from Microchip Technology is a 512-Kbit (64K × 8) SPI-compatible serial SRAM with battery backup support, SDI dual-interface capability, and industrial temperature range (−40°C to +85°C). It operates from 2.5–5.5 V, delivers 20 MHz clock rate, supports byte/page/sequential read/write modes, and maintains data via external VBAT supply during main power loss - used in embedded data logging, real-time control buffers, and fail-safe configuration storage.
For engineers reviewing the 23LCV512T-E/SN datasheet, 23LCV512T-E/SN pinout, 23LCV512T-E/SN application, or 23LCV512T-E/SN equivalent, key selection considerations include VBAT retention voltage (1.0 V min), SDI mode entry/exit commands (EDIO/RSTIO), standby current (4 µA at +85°C), and SOIC-8 package compatibility with legacy PCB footprints.
Technical Context
The 23LCV512T-E/SN implements a true serial SRAM architecture with no internal refresh circuitry, enabling unlimited read/write cycles and zero write time. Its SPI interface uses separate SI/SO lines (or shared SIO0/SIO1 in SDI mode), with CS-controlled active-low selection and automatic high-impedance SO release on deselect.
It features a programmable MODE register (bits 7–6 select Byte/Page/Sequential operation), supports dual I/O for higher throughput, and includes an internal VBAT switchover circuit triggered at 1.6–2.0 V (typ. 1.8 V) to preserve RAM contents when VCC drops below VTRIP.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 512 Kbit (64K × 8-bit organization), supporting up to 65,536 addressable bytes |
| Interface Protocol | SPI-compatible serial bus with optional SDI (Serial Dual Interface) mode for doubled data rate per clock cycle |
| Max Clock Frequency | 20 MHz - enables 2.5 MB/s peak data transfer in SPI mode, 5 MB/s in SDI mode |
| VCC Operating Range | 2.5 V to 5.5 V - compatible with 3.3 V and 5 V microcontroller systems without level shifting |
| Standby Current | 4 µA at +85°C - ensures ultra-low power retention in battery-backed applications |
| VBAT Retention Voltage | 1.0 V minimum - guarantees data integrity down to coin-cell discharge thresholds |
| Page Size | 32-byte pages - optimizes burst writes while limiting wraparound risk within page boundaries |
Pinout & Package
23LCV512T-E/SN is housed in an 8-lead narrow-body SOIC (SN) package (3.90 mm width, 1.27 mm pitch), RoHS-compliant and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (CS) | Chip Select Input | Active-low enable; forces device into standby and tri-states SO when high |
| 2 (SO/SIO1) | Serial Output / SDI Data Line 1 | Outputs data in SPI mode; serves as second bidirectional I/O in SDI mode |
| 3 (NC) | No Connect | Internally unconnected; must be left floating or tied to ground per layout best practice |
| 4 (VSS) | Ground Reference | Primary return path for VCC and VBAT supplies; requires low-impedance PCB connection |
| 5 (SI/SIO0) | Serial Input / SDI Data Line 0 | Accepts instructions/addresses/data in SPI mode; serves as first bidirectional I/O in SDI mode |
| 6 (SCK) | Serial Clock Input | Edge-triggered synchronous signal; rising edge latches SI, falling edge updates SO |
| 7 (VBAT) | External Backup Supply Input | Provides continuous power to retain SRAM data when VCC falls below 1.6–2.0 V trip point |
| 8 (VCC) | Primary Power Supply | Supplies operating power; must be decoupled with ≥100 nF ceramic capacitor near pin |
Key Features
| Feature | Design Value |
|---|---|
| Unlimited Read/Write Cycles | Enables persistent data buffering in high-frequency logging systems without wear-out concerns |
| Zero Write Time | Eliminates wait states after write commands - critical for deterministic real-time response |
| SDI Mode Support | Doubles effective throughput using SIO0/SIO1 pins; reduces clock count by 50% for same data volume |
| VBAT Switchover Circuit | Automatically transitions to backup supply at ~1.8 V; preserves RAM state without host intervention |
| Industrial Temperature Range | Validated operation from −40°C to +85°C - suitable for automotive body controllers and industrial PLCs |
Applications
| Industrial Data Logger | Medical Device Configuration Store |
|---|---|
Use Scenario: Continuous acquisition of sensor readings (e.g., temperature, pressure) with periodic flash-offload to nonvolatile memory. IC Role / Device Role / Timing Role: High-speed, low-latency SRAM buffer between ADC subsystem and microcontroller, absorbing burst samples before background flash writes. Use Value: Zero write time and 20 MHz interface prevent sample loss during flash erase cycles; VBAT retains latest valid reading during brownout. | Use Scenario: Storing calibrated parameters, user preferences, and runtime fault history in portable diagnostic equipment. IC Role / Device Role / Timing Role: Nonvolatile configuration store accessed frequently during boot and calibration routines. Use Value: Unlimited endurance avoids degradation over 10+ years of clinical use; 4 µA standby current extends battery life in battery-only operation. |
| Automotive Body Control Module | Smart Meter Firmware Patch Buffer |
Use Scenario: Temporary storage of door lock status, window position, mirror settings, and error codes across ignition cycles. IC Role / Device Role / Timing Role: Battery-backed volatile memory holding volatile system state during vehicle sleep mode. Use Value: VBAT retention down to 1.0 V ensures data survival even with weak backup batteries; SOIC-8 footprint simplifies drop-in replacement in legacy designs. | Use Scenario: Receiving and staging firmware patches over PLC or RF link prior to secure validation and flash update. IC Role / Device Role / Timing Role: Secure, high-throughput RAM buffer isolating patch data from main application memory space. Use Value: SDI mode enables fast patch ingestion (5 MB/s) without increasing MCU clock load; sequential read/write eliminates address management overhead. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 23LC1024-I/SN | 1 Mbit capacity (128K × 8), identical SOIC-8 package, same VCC/VBAT specs and SDI support | Higher density for larger configuration sets or extended logging duration | Select when >512 Kbit memory is required without changing PCB layout |
| FM25V05-G | F-RAM technology (not SRAM); 512 Kbit, 2.7–3.6 V only, 40 MHz max clock, no VBAT pin | Lower write energy, faster write cycles, but lacks battery backup and wider VCC range | Choose for ultra-low-power write-intensive apps where VBAT is unnecessary and voltage is stable at 3.3 V |
Compared with 23LC1024-I/SN, the 23LCV512T-E/SN offers lower cost and smaller footprint for mid-density needs; versus FM25V05-G, it provides broader supply range, integrated VBAT retention, and guaranteed SRAM timing predictability - critical for deterministic embedded control.
Availability
23LCV512T-E/SN is available at Aetrix Electronics and suitable for industrial data loggers, medical device configuration stores, automotive body control modules, smart meter firmware patch buffers, and battery-backed real-time control systems requiring stable component supply across long production lifecycles.
Supply support for 23LCV512T-E/SN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology Inc. is a leading provider of microcontrollers, analog devices, and memory solutions, headquartered in Chandler, Arizona, with global design and manufacturing operations.
The 23LCV512T-E/SN belongs to Microchip's serial SRAM product line, engineered for robust, low-power, battery-backed data buffering in harsh industrial and automotive environments where reliability and endurance are non-negotiable.
FAQ
What is the maximum clock frequency supported by the 23LCV512T-E/SN?
The 23LCV512T-E/SN supports a maximum clock frequency of 20 MHz in standard SPI mode. This allows sustained data transfer rates up to 2.5 MB/s. In SDI (Serial Dual Interface) mode, the same clock frequency yields double the effective throughput due to two bits transferred per clock cycle, achieving up to 5 MB/s. All AC timing parameters in the datasheet (e.g., TCSS, Tsu, THD) are validated at this 20 MHz limit under industrial temperature conditions.
Does the 23LCV512T-E/SN require external hardware for battery backup operation?
Yes - the 23LCV512T-E/SN requires an external backup power source (e.g., coin cell or supercapacitor) connected to the VBAT pin (pin 7). The device includes an internal switchover circuit that automatically engages VBAT when VCC drops below the VTRIP threshold (1.6–2.0 V, typ. 1.8 V). No external diodes or regulators are needed, but VBAT must remain within 1.4–3.6 V and is specified to retain data down to 1.0 V.
How does the 23LCV512T-E/SN handle page boundaries during write operations?
In Page mode (MODE[7:6] = 10b), the 23LCV512T-E/SN restricts write operations to within a single 32-byte page. The internal address counter increments automatically but wraps to the start of the same page upon reaching the page boundary - it does not cross into the next page. This prevents accidental overwrites across page boundaries and simplifies firmware address management for fixed-size buffers.
Can the 23LCV512T-E/SN be used in both SPI and SDI modes on the same PCB layout?
Yes - the 23LCV512T-E/SN shares pins SO/SIO1 (pin 2) and SI/SIO0 (pin 5) between SPI and SDI modes. In SPI mode, pin 2 functions as output-only SO and pin 5 as input-only SI. In SDI mode, both become bidirectional I/O lines. The mode is selected dynamically via EDIO (0x3B) and RSTIO (0xFF) commands, so a single SOIC-8 footprint supports either interface without hardware modification.
What is the meaning of the "T-E/SN" suffix in the part number 23LCV512T-E/SN?
The "T" indicates tape-and-reel packaging; "E" denotes lead-free, RoHS-compliant, halogen-free construction; and "/SN" specifies the 8-lead narrow-body SOIC package (3.90 mm width). This full suffix confirms the device meets environmental compliance requirements and is supplied in automated assembly-ready format - distinct from tube-packaged (no "T") or PDIP ("/P") variants.
23LCV512T-E/SN Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous
- Memory Size:
- 512Kbit
- Memory Organization:
- 64K x 8
- Memory Interface:
- SPI - Dual I/O
- Clock Frequency:
- 20 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 2.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
23LCV512T-E/SN FAQ
1.How can I place an order for 23LCV512T-E/SN through Aetrix?
Please submit a Request for Quotation (RFQ) for 23LCV512T-E/SN on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 23LCV512T-E/SN reliable?
The price and inventory of 23LCV512T-E/SN are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 23LCV512T-E/SN is usually 5 days.
3.What payment methods are accepted for 23LCV512T-E/SN?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 23LCV512T-E/SN transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 23LCV512T-E/SN?
23LCV512T-E/SN orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 23LCV512T-E/SN order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 23LCV512T-E/SN?
For technical support, including 23LCV512T-E/SN datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 23LCV512T-E/SN requirements.
6.How does Aetrix verify that 23LCV512T-E/SN is sourced from the original manufacturer or authorized distributors?
All 23LCV512T-E/SN products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 23LCV512T-E/SN meets industry standards.
7.What is the process for return or replacement of 23LCV512T-E/SN?
All 23LCV512T-E/SN units undergo pre-shipment inspection (PSI). If there is an issue with 23LCV512T-E/SN, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 23LCV512T-E/SN part is unused and in its original packaging.
Return procedure for 23LCV512T-E/SN:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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