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Diodes Incorporated 2DB1132Q-13
- Part No.:
- 2DB1132Q-13
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- TO-243AA
- Datasheet:
-
2DB1132Q-13.pdf
- Description:
- TRANS PNP 32V 1A SOT-89-3
- Quantity:
- Payment:
- Shipping:
Inventory:8,111
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Product details
Overview
2DB1132Q-13 from Diodes Incorporated is a PNP bipolar junction transistor (BJT) designed for medium-power switching and amplification, featuring -32 V VCEO, -1 A continuous collector current, 120–270 hFE at -100 mA / -3 V, and SOT89 surface-mount package. It operates reliably from -55 °C to +150 °C and is suited for DC-DC converter control stages and industrial relay drivers.
For engineers reviewing the 2DB1132Q-13 datasheet, 2DB1132Q-13 pinout, 2DB1132Q-13 application, or 2DB1132Q-13 equivalent, key selection criteria include verified VCEO rating, thermal resistance (RθJA = 83 °C/W on 25 mm × 25 mm copper), hFE binning consistency, and JEDEC-compliant ESD robustness (4 kV HBM).
Technical Context
This PNP BJT uses epitaxial planar construction with a complementary NPN counterpart (2DD1664). Its gain-bandwidth product reaches 190 MHz at -50 mA emitter current and -5 V VCE, supporting high-speed switching up to ~100 kHz in saturated-mode applications.
Thermal performance is defined across three PCB copper-area configurations: RθJA = 125 °C/W (15 mm × 15 mm), 83 °C/W (25 mm × 25 mm), and 60 °C/W (50 mm × 50 mm), enabling precise power derating in thermally constrained layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | -32 V - Maximum safe collector-emitter voltage before avalanche breakdown under open-base conditions |
| IC (cont) | -1 A - Continuous DC collector current capability with proper heatsinking on 25 mm × 25 mm copper |
| hFE | 120–270 - DC current gain range at -100 mA IC, -3 V VCE; defines base drive requirement for saturation |
| VCE(sat) | -125 to -500 mV - Voltage drop across collector-emitter when fully saturated at -500 mA IC / -50 mA IB |
| fT | 190 MHz - Transition frequency indicating usable small-signal bandwidth in common-emitter configuration |
| RθJA | 83 °C/W - Junction-to-ambient thermal resistance on standard 25 mm × 25 mm 1 oz copper PCB, used for thermal design margining |
| ESD HBM | 4,000 V - Human Body Model robustness level per JESD22-A114, critical for handling and assembly reliability |
Pinout & Package
SOT89 package with exposed collector pad for thermal conduction; molded green plastic case (UL 94V-0), matte tin-plated leads, 0.055 g mass, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (Tab) | Power output node / heat sink interface | Exposed metal tab electrically connected to collector; must be soldered to ≥25 mm² copper area for thermal compliance |
| Base | Control input | Current-driven gate; requires -50 mA IB to saturate at -500 mA IC per datasheet test condition |
| Emitter | Reference terminal / current return path | Connected to system ground or higher-potential rail depending on switching topology (e.g., high-side switch configuration) |
Key Features
| Feature | Design Value |
|---|---|
| High-voltage PNP switching | Rated for -32 V VCEO, enabling use in 24 V industrial bus and automotive load-switching applications |
| Automated-assembly optimized | SOT89 footprint and lead finish comply with MIL-STD-202 solderability standards for reflow and wave processes |
| JEDEC-reliable construction | Qualified to AEC-Q101 stress-test standards for high-reliability discrete transistors in harsh environments |
| Green material compliance | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb), meeting RoHS 3 and IEC 61249-2-21 |
Applications
| Industrial Relay Driver | DC-DC Converter Control |
|---|---|
Use Scenario: Driving 24 V coil relays in programmable logic controllers with microcontroller GPIO-level base control. IC Role / Device Role / Timing Role: Medium-power PNP switch providing low-saturation voltage and fast turn-off for reliable coil de-energization. Use Value: -125 mV VCE(sat) minimizes power loss during sustained on-state; 190 MHz fT ensures clean edge transitions during PWM-modulated drive. | Use Scenario: High-side switch in non-isolated buck regulator feedback loop or synchronous rectifier auxiliary control. IC Role / Device Role / Timing Role: PNP-based active clamp or gate driver stage controlling MOSFET gate voltage referenced to input rail. Use Value: -32 V VCEO supports operation across 12–28 V input ranges; hFE binning enables predictable base resistor sizing for stable switching thresholds. |
| Automotive Lighting Control | Power Supply Sequencing |
Use Scenario: Controlling LED headlamp modules in body control units where reverse-polarity protection and thermal resilience are required. IC Role / Device Role / Timing Role: High-side current switch managing load current while surviving load-dump transients up to -32 V. Use Value: -40 V VCBO and -5 V VEBO provide margin against inductive kickback and reverse-battery events in 12 V systems. | Use Scenario: Enabling/disabling downstream voltage rails in multi-rail embedded systems using sequenced enable signals. IC Role / Device Role / Timing Role: Discrete power switch implementing controlled ramp-up of supply voltages to avoid inrush current violations. Use Value: -1 A IC rating supports >500 mA rail loads; RθJA = 83 °C/W allows operation without external heatsink at ambient ≤70 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP medium-power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2DB1132R-13 | Higher hFE (180–390), active status vs. obsolete Q-grade | Same SOT89 footprint and absolute ratings; preferred for new designs requiring tighter gain tolerance | Select R-grade for improved current gain consistency and long-term supply assurance |
| MJD122G | TO-252 package, -100 V VCEO, -1.5 A IC, lower hFE (20–100) | Higher voltage margin but larger footprint; suited for higher-energy transient environments | Choose MJD122G only if -100 V rating or TO-252 thermal mass is required; not drop-in compatible |
Compared with 2DB1132R-13, the Q-grade offers identical electrical specs but lacks ongoing production support; versus MJD122G, it trades voltage headroom and package size for smaller board area and better gain predictability in 24 V systems.
Availability
2DB1132Q-13 is available at Aetrix Electronics and suitable for industrial relay drivers, DC-DC converter control stages, and automotive lighting modules requiring stable component supply despite its obsolete status-inventory is held for legacy system maintenance and repair.
Supply support for 2DB1132Q-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.
The 2DB1132 series belongs to Diodes' high-reliability PNP transistor portfolio, engineered for medium-power switching in industrial controls, automotive subsystems, and power management circuits where thermal stability and JEDEC-compliant ruggedness are essential.
FAQ
Is 2DB1132Q-13 still in production?
No-2DB1132Q-13 is marked obsolete in Diodes' official ordering information. Only 2DB1132R-13 and 2DB1132R-13R remain active. Aetrix maintains limited legacy stock of Q-grade for repair and maintenance of existing designs, with full traceability and date-code documentation.
What is the difference between 2DB1132Q-13 and 2DB1132R-13?
The sole functional difference is DC current gain: Q-grade specifies hFE = 120–270, while R-grade specifies 180–390 at -100 mA / -3 V. Both share identical absolute maximum ratings, thermal characteristics, SOT89 package, and pinout. R-grade is recommended for new designs due to active status and tighter gain distribution.
Can 2DB1132Q-13 replace 2DB1132P-13?
Yes-both share identical electrical specifications except hFE: P-grade is 82–180, Q-grade is 120–270. They are mechanically and electrically interchangeable in SOT89 footprint. However, P-grade is also obsolete, and neither should be used in new designs without verifying gain-dependent circuit margins.
Does 2DB1132Q-13 meet AEC-Q101 requirements?
Yes-the datasheet states qualification to JEDEC standards "as references in AEC-Q", and Diodes explicitly lists this part family under its AEC-Q101-qualified discrete transistors. It is manufactured in IATF 16949-certified facilities, though the Q-suffix does not denote automotive grade-automotive variants use dedicated part numbers (e.g., 2DB1132RQ).
2DB1132Q-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-243AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 1 A
- Voltage - Collector Emitter Breakdown (Max):
- 32 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max):
- 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 120 @ 100mA, 3V
- Power - Max:
- 1 W
- Frequency - Transition:
- 190MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-89-3
2DB1132Q-13 FAQ
1.How can I place an order for 2DB1132Q-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2DB1132Q-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2DB1132Q-13 reliable?
The price and inventory of 2DB1132Q-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2DB1132Q-13 is usually 5 days.
3.What payment methods are accepted for 2DB1132Q-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2DB1132Q-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2DB1132Q-13?
2DB1132Q-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2DB1132Q-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2DB1132Q-13?
For technical support, including 2DB1132Q-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2DB1132Q-13 requirements.
6.How does Aetrix verify that 2DB1132Q-13 is sourced from the original manufacturer or authorized distributors?
All 2DB1132Q-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2DB1132Q-13 meets industry standards.
7.What is the process for return or replacement of 2DB1132Q-13?
All 2DB1132Q-13 units undergo pre-shipment inspection (PSI). If there is an issue with 2DB1132Q-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2DB1132Q-13 part is unused and in its original packaging.
Return procedure for 2DB1132Q-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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