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Diodes Incorporated 2DB1132R-13

Part No.:
2DB1132R-13
Manufacturer:
Diodes Incorporated
Category:
Single Bipolar Transistors
Package:
TO-243AA
Datasheet:
Aetrix2DB1132R-13.pdf
Description:
TRANS PNP 32V 1A SOT-89-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,638

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Product details

Overview

2DB1132R-13 from Diodes Incorporated is a 32V PNP power switching transistor in SOT89 package, rated for -1A continuous collector current, -32V VCEO, and 1W power dissipation at 25°C ambient with 15mm×15mm copper pad. It delivers hFE = 180–390 at IC = -100mA/VCE = -3V and VCE(sat) = -125mV (typ) at IC = -500mA/IB = -50mA, enabling medium-power DC switching in industrial power supplies and LED drivers.

For engineers reviewing the 2DB1132R-13 datasheet, 2DB1132R-13 pinout, 2DB1132R-13 application, or 2DB1132R-13 equivalent, key selection criteria include verified PNP switching capability, thermal performance on defined PCB copper areas, JEDEC-compliant reliability, and direct compatibility with automated SMT assembly processes.

Technical Context

This device operates as a medium-power PNP bipolar junction transistor optimized for linear amplification and saturated switching. Its high hFE range (180–390) supports low-base-drive designs, while its -32V VCEO and -40V VCBO ratings enable use in 24V rail systems with margin. The SOT89 package features an exposed collector pad thermally coupled to PCB copper for enhanced heat dissipation.

Thermal resistance varies with copper area: RθJA = 125°C/W (15×15 mm), 83°C/W (25×25 mm), or 60°C/W (50×50 mm). ESD robustness includes 4kV HBM and 400V MM ratings per JEDEC JESD22-A114/A115, supporting handling in standard manufacturing environments.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO-32 V - Maximum safe collector-emitter voltage under open-base conditions; defines usable voltage headroom in 24V DC systems.
IC (cont)-1 A - Continuous collector current rating; determines maximum load drive capability without derating at 25°C ambient.
hFE180–390 - DC current gain at IC = -100mA/VCE = -3V; enables precise base resistor sizing for predictable saturation.
VCE(sat)-125 mV (typ) at IC = -500mA/IB = -50mA - Low saturation voltage reduces conduction loss and self-heating in switching applications.
RθJA125 °C/W - Junction-to-ambient thermal resistance on 15×15 mm 1oz Cu; sets temperature rise per watt dissipated in minimal layout.
fT190 MHz - Transition frequency at IE = -50mA/VCE = -5V/30MHz; confirms suitability for audio-frequency switching, not RF.
ESD HBM4,000 V - Human Body Model rating per JESD22-A114; supports robust handling during board assembly and test.

Pinout & Package

SOT89 package with molded green plastic case, UL 94V-0 flammability rating, matte tin-plated leads, and exposed collector pad for thermal conduction to PCB. Weight: 0.055 g.

Pin/TerminalCircuit RoleDesign Meaning
Emitter (E)Current source terminalConnected to higher potential rail; carries full load current and defines reference for base biasing.
Base (B)Control inputReceives negative current to turn on; requires external current-limiting resistor for reliable saturation.
Collector (C)Power output terminalExposed metal pad soldered to PCB copper; primary thermal path and main current return node.

Key Features

FeatureDesign Value
High hFE range180–390 ensures stable switching with low base drive current, reducing control circuit power and component count.
Low VCE(sat)-125 mV typ at IC = -500mA minimizes conduction loss and improves efficiency in battery-powered or thermally constrained systems.
JEDEC-qualified reliabilityQualified to AEC-Q101 stress standards for high-reliability operation across -55°C to +150°C junction temperature range.
Green RoHS complianceFully lead-free, halogen-free, and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); meets EU RoHS 2015/863/EU and automotive change-control requirements.

Applications

Industrial Power Supply ControlLED Constant-Current Driver

Use Scenario: Switching regulator feedback loop or auxiliary bias supply enable/disable control in 24V industrial SMPS units.

IC Role / Device Role / Timing Role: PNP switch controlling gate drive or bias rail sequencing with fast turn-on/off and low standby loss.

Use Value: High hFE and low VCE(sat) reduce base drive burden and improve regulation accuracy under variable load.

Use Scenario: Linear current sink for mid-power LED strings in signage or machine vision lighting.

IC Role / Device Role / Timing Role: Constant-current pass element regulated by op-amp feedback, operating in linear mode with thermal management via SOT89 pad.

Use Value: Stable hFE over temperature and low saturation voltage maintain consistent LED brightness across ambient shifts.

Automotive Interior LightingProgrammable Load Switch

Use Scenario: Overvoltage-protected tail light or dome light driver in 12V vehicle systems with transient suppression.

IC Role / Device Role / Timing Role: High-side PNP switch interfacing with microcontroller GPIO, leveraging -32V VCEO for load dump tolerance.

Use Value: -40V VCBO and 4kV HBM ESD withstand support robust operation in noisy automotive electrical environments.

Use Scenario: Board-level power domain enable for FPGA I/O banks or sensor subsystems requiring controlled inrush.

IC Role / Device Role / Timing Role: Discrete load switch with externally adjustable slew rate via base RC network for EMI reduction.

Use Value: Predictable VCE(sat) and thermal resistance allow accurate power budgeting and thermal pad design for long-term reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power switching transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MJD112-13Higher VCEO (-40V), lower hFE (30–120), TO-252 packageRequires larger PCB footprint and different thermal layout; better for higher-voltage 36V+ systemsSelect when >32V blocking or TO-252 mechanical fit is required; verify base drive sufficiency due to lower gain.
ZTX788BHigher VCEO (-45V), similar hFE (200–450), SOT-223 packageGreater thermal mass but no exposed collector pad; RθJA ~100°C/W on same copper areaChoose for improved voltage margin and legacy SOT-223 footprint compatibility; expect slightly higher thermal resistance.

Compared with MJD112-13 and ZTX788B, the 2DB1132R-13 offers optimal balance of SOT89 compactness, high gain, low saturation voltage, and JEDEC-qualified reliability-making it preferred for space-constrained 24V industrial and automotive modules where thermal performance and manufacturability are critical.

Availability

2DB1132R-13 is available at Aetrix Electronics and suitable for industrial power supply control, LED constant-current drivers, and automotive interior lighting requiring stable component supply and full RoHS/Green compliance.

Supply support for 2DB1132R-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for industrial, automotive, and consumer markets.

The 2DB1132R-13 belongs to Diodes' power bipolar transistor product line, engineered for medium-power switching and amplification in thermally demanding, automated-assembly environments.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The 2DB1132R-13 has an operating junction temperature range of -55°C to +150°C. For continuous operation, the maximum junction temperature must not exceed +150°C, which requires appropriate PCB copper area and ambient temperature control based on its RθJA values (e.g., 125°C/W on 15×15 mm Cu).

Is this part qualified for automotive applications?

The 2DB1132R-13 is JEDEC-qualified and meets AEC-Q101 stress test requirements for high reliability. While not an automotive-grade Q-suffix part, it is suitable for non-safety-critical automotive interior applications; Diodes offers dedicated AEC-Q101 qualified variants (e.g., 2DB1132QR) for PPAP-capable production.

How does the SOT89 exposed collector pad affect thermal design?

The exposed collector pad serves as the primary thermal path from die to PCB. When soldered to ≥15 mm² of 1oz copper, it achieves RθJA = 125°C/W; increasing copper area to 50×50 mm reduces RθJA to 60°C/W, directly lowering junction temperature under identical power dissipation.

Can this transistor be used in linear amplifier configurations?

Yes-the 2DB1132R-13 supports linear operation with specified hFE, VCE(sat), and fT = 190 MHz. Its gain stability across temperature and low distortion at moderate frequencies make it suitable for audio preamplifiers or sensor signal conditioning, provided thermal limits and SOA constraints are observed.

2DB1132R-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-243AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
1 A
Voltage - Collector Emitter Breakdown (Max):
32 V
Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):
500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
180 @ 100mA, 3V
Power - Max:
1 W
Frequency - Transition:
190MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-89-3

2DB1132R-13 FAQ

1.How can I place an order for 2DB1132R-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2DB1132R-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2DB1132R-13 reliable?

The price and inventory of 2DB1132R-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2DB1132R-13 is usually 5 days.

3.What payment methods are accepted for 2DB1132R-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2DB1132R-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2DB1132R-13?

2DB1132R-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2DB1132R-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2DB1132R-13?

For technical support, including 2DB1132R-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2DB1132R-13 requirements.

6.How does Aetrix verify that 2DB1132R-13 is sourced from the original manufacturer or authorized distributors?

All 2DB1132R-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2DB1132R-13 meets industry standards.

7.What is the process for return or replacement of 2DB1132R-13?

All 2DB1132R-13 units undergo pre-shipment inspection (PSI). If there is an issue with 2DB1132R-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2DB1132R-13 part is unused and in its original packaging.

Return procedure for 2DB1132R-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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