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Diodes Incorporated 2DB1182Q-13

Part No.:
2DB1182Q-13
Manufacturer:
Diodes Incorporated
Category:
Single Bipolar Transistors
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
Aetrix2DB1182Q-13.pdf
Description:
TRANS PNP 32V 2A TO-252-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:16,287

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Product details

Overview

2DB1182Q-13 from Diodes Incorporated is a PNP medium-power bipolar junction transistor in TO252 (DPAK) package, rated for -32 V VCEO, -2 A continuous collector current, and -0.8 V VCE(sat) at IC = -2 A / IB = -0.2 A. It delivers hFE of 120–270 at VCE = -3 V / IC = -0.5 A and supports automotive-grade switching in body control modules and power supply regulators.

For engineers reviewing the 2DB1182Q-13 datasheet, 2DB1182Q-13 pinout, 2DB1182Q-13 application, or 2DB1182Q-13 equivalent, this page provides verified electrical parameters, thermal resistance values (RθJA = 104 °C/W), AEC-Q101 qualification status, TO252 mechanical dimensions, and validated automotive-grade alternatives with documented voltage/current/thermal trade-offs.

Technical Context

This PNP transistor uses epitaxial planar die construction to achieve low saturation voltage and stable DC current gain across -55°C to +150°C operating range. Its VCEO = -32 V and VCBO = -40 V support robust blocking in medium-voltage DC-DC and load-switching circuits.

With fT = 110 MHz and turn-off time toff = 280 ns, it enables fast switching in PWM-driven solenoid drivers and LED matrix controls while maintaining thermal stability via RθJC = 18 °C/W and exposed collector pad design.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO-32 V - Maximum safe collector-emitter reverse bias before breakdown in common-emitter configuration.
IC (cont.)-2 A - Continuous collector current rating defining steady-state power handling capability.
VCE(sat)-0.8 V @ IC = -2 A / IB = -0.2 A - Low saturation voltage minimizes conduction loss in high-current switching.
hFE120–270 @ VCE = -3 V / IC = -0.5 A - Stable DC current gain enabling predictable base drive sizing.
RθJA104 °C/W - Junction-to-ambient thermal resistance on standard 1 oz copper PCB, critical for heatsinkless operation.
fT110 MHz - Transition frequency confirming suitability for >100 kHz switching applications.
AEC-Q101Qualified - Validated for automotive use including PPAP readiness and IATF 16949 manufacturing compliance.

Pinout & Package

Package: TO252 (DPAK), surface-mount, with exposed collector pad for thermal dissipation and mechanical anchoring. Molded green compound meets UL 94V-0 and RoHS 3 requirements.

Pin/TerminalCircuit RoleDesign Meaning
Collector (C)Main current sink terminalExposed metal pad - primary thermal path and high-current connection point; requires minimum recommended copper area per datasheet.
Emitter (E)Current source reference nodeConnected to system ground or negative rail; carries full load current and defines emitter-follower bias point.
Base (B)Control input for current amplificationLow-impedance gate for driving transistor into saturation or cutoff; requires current-limited sourcing due to hFE-dependent gain.

Key Features

FeatureDesign Value
Low VCE(sat)-0.8 V at full rated current reduces power loss by >30% vs. legacy PNP transistors with >1.2 V saturation.
AEC-Q101 qualificationValidated for automotive underhood environments including temperature cycling, humidity, and vibration stress tests.
Epitaxial planar dieEnables tight parameter distribution (hFE spread ±25%) and improved reliability over alloy-junction alternatives.
Green molding compoundHalogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb) meeting automotive OEM environmental mandates.
Moisture sensitivity Level 1No bake required before reflow - compatible with standard SMT assembly lines without floor-life constraints.

Applications

Automotive Body Control ModuleIndustrial DC-DC Load Switch

Use Scenario: Driving 12 V solenoids and relays in door lock actuators and seat position memory systems.

IC Role / Device Role / Timing Role: Medium-power PNP switch controlling up to 2 A inductive loads with flyback protection.

Use Value: -32 V VCEO withstands load-dump transients; -0.8 V VCE(sat) limits self-heating during extended duty cycles.

Use Scenario: Enabling/disabling 24 V auxiliary rails in programmable logic controllers and sensor interface boards.

IC Role / Device Role / Timing Role: High-side load switch with fast turn-off (toff = 280 ns) for fault-responsive shutdown.

Use Value: RθJC = 18 °C/W allows direct mounting to metal chassis; AEC-Q101 ensures long-term reliability in factory automation.

LED Matrix DriverPower Supply OR-ing Circuit

Use Scenario: Sink-driving 8×8 red/green LED arrays in automotive instrument clusters and HUD displays.

IC Role / Device Role / Timing Role: Constant-current PNP switch with hFE stability across temperature for uniform brightness.

Use Value: hFE = 120–270 at -55°C to +125°C eliminates need for dynamic base compensation circuitry.

Use Scenario: Reverse-polarity protection and seamless power-source handover between dual 12 V supplies in telematics units.

IC Role / Device Role / Timing Role: Discrete PNP-based ideal diode controller with low forward drop and fast recovery.

Use Value: VBE(on) tracking ensures matched turn-on thresholds; fT = 110 MHz supports >50 kHz ripple rejection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MBT3906DW1T1GVCEO = -40 V, IC = -200 mA, TO236 package - higher voltage rating but 10× lower current capacity.Not suitable for >500 mA loads; limited thermal performance (RθJA ≈ 300 °C/W).Select only for low-current signal-level inversion where footprint and cost outweigh power needs.
ZTX951VCEO = -60 V, IC = -1 A, TO92 package - higher voltage margin but lower current and no AEC-Q101 qualification.Lacks automotive qualification and thermal performance (RθJC > 100 °C/W); unsuitable for underhood use.Prefer for non-automotive industrial prototypes requiring higher VCEO but not production deployment.

Compared with MBT3906DW1T1G and ZTX951, the 2DB1182Q-13 uniquely balances -2 A current, -32 V blocking, AEC-Q101 compliance, and TO252 thermal efficiency-making it the only option qualified for volume automotive power switching where both current and reliability are mandatory.

Availability

2DB1182Q-13 is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC load switches, and LED matrix drivers requiring stable component supply, long-term lifecycle assurance, and traceable AEC-Q101-compliant sourcing.

Supply support for 2DB1182Q-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

The 2DB1182Q belongs to Diodes' AEC-Q101-qualified medium-power transistor family, engineered specifically for automotive power switching applications demanding robust thermal performance, precise gain control, and zero-defect manufacturing.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The 2DB1182Q-13 has an operating junction temperature range of -55°C to +150°C. For continuous operation at full rated current (-2 A), thermal design must ensure TJ stays ≤150°C using RθJA = 104 °C/W or RθJC = 18 °C/W paths. Derating is required above +25°C ambient per Figure 3's hFE and VCE(sat) curves.

Is the TO252 package lead (pin) compatible with TO263 footprints?

No - the TO252 (DPAK) package has a 2.29 mm height (A dimension), 6.10 mm width (D), and 6.58 mm length (E), while TO263 (D2PAK) measures 2.54 mm height, 10.16 mm width, and 15.24 mm length. Pad layouts, thermal pad size, and screw-hole spacing differ; mechanical redesign is required for substitution.

Does the 2DB1182Q-13 require external base current limiting in switching applications?

Yes - base current must be sized to ensure IB ≥ IC/hFE(min). With hFE min = 120 at IC = -0.5 A and typical gain dropping at higher currents, a -0.2 A base drive is specified for -2 A collector conduction. An external series resistor or current-source driver is mandatory to prevent thermal runaway.

How does the AEC-Q101 qualification impact supply chain assurance?

AEC-Q101 qualification confirms that each 2DB1182Q-13 lot undergoes accelerated stress testing (HTOL, TC, UHAST) and statistical process control per IATF 16949. This enables Aetrix to guarantee PPAP-ready documentation, lot traceability to wafer fab, and priority allocation during automotive supply shortages.

2DB1182Q-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
2 A
Voltage - Collector Emitter Breakdown (Max):
32 V
Vce Saturation (Max) @ Ib, Ic:
800mV @ 200mA, 2A
Current - Collector Cutoff (Max):
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 500mA, 3V
Power - Max:
10 W
Frequency - Transition:
110MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252-3

2DB1182Q-13 FAQ

1.How can I place an order for 2DB1182Q-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2DB1182Q-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2DB1182Q-13 reliable?

The price and inventory of 2DB1182Q-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2DB1182Q-13 is usually 5 days.

3.What payment methods are accepted for 2DB1182Q-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2DB1182Q-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2DB1182Q-13?

2DB1182Q-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2DB1182Q-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2DB1182Q-13?

For technical support, including 2DB1182Q-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2DB1182Q-13 requirements.

6.How does Aetrix verify that 2DB1182Q-13 is sourced from the original manufacturer or authorized distributors?

All 2DB1182Q-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2DB1182Q-13 meets industry standards.

7.What is the process for return or replacement of 2DB1182Q-13?

All 2DB1182Q-13 units undergo pre-shipment inspection (PSI). If there is an issue with 2DB1182Q-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2DB1182Q-13 part is unused and in its original packaging.

Return procedure for 2DB1182Q-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2DB1182Q-13 Tags

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