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Diodes Incorporated 2DB1386R-13
- Part No.:
- 2DB1386R-13
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- TO-243AA
- Datasheet:
-
2DB1386R-13.pdf
- Description:
- TRANS PNP 20V 5A SOT-89-3
- Quantity:
- Payment:
- Shipping:
Inventory:2,395
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Product details
Overview
2DB1386R-13 from Diodes Incorporated is a PNP medium-power bipolar junction transistor in SOT89 package, rated for -20V VCEO, -5A continuous collector current, and VCE(sat) ≤ -1.0V at -4A/-0.1A drive-designed for high-current switching in automotive body control modules, industrial power supplies, and LED driver stages.
For engineers reviewing the 2DB1386R-13 datasheet, 2DB1386R-13 pinout, 2DB1386R-13 application, or 2DB1386R-13 equivalent, key selection criteria include verified saturation voltage under high IC, thermal resistance to leads (19°C/W), hFE range of 180–390 at -0.5A, complementary NPN pairing with 2DD2098, and AEC-Q101 readiness per manufacturer qualification path.
Technical Context
This PNP transistor operates in linear or saturated switching mode with guaranteed breakdown margins: VCBO = -30V, VEBO = -6V, and safe operation up to +150°C junction temperature. Its low RθJL (19°C/W) enables efficient heat transfer from die to PCB copper via the exposed collector pad.
DC current gain is specified at 180–390 (min–max) at IC = -0.5A and VCE = -2V, with fT = 100MHz typical at VCE = -6V/ IE = 50mA-supporting moderate-speed switching in DC-DC feedback paths and load switch control loops.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | -20V - Maximum allowable collector-emitter voltage before avalanche conduction in common-emitter configuration. |
| IC (cont) | -5A - Continuous collector current rating defining maximum steady-state load switching capacity. |
| VCE(sat) | -0.25V to -1.0V @ -4A/-0.1A - Confirmed low on-state loss enabling <0.4W dissipation in saturated switch applications. |
| hFE | 180–390 @ -0.5A/-2V - Verified DC current gain range ensuring predictable base drive requirements across production lots. |
| RθJL | 19°C/W - Thermal resistance from junction to solder point, enabling direct thermal coupling to PCB copper for >1W power handling. |
| fT | 100MHz typical - Small-signal transition frequency confirming suitability for switching above 10MHz in feedback or gate-drive circuits. |
| Cobo | 55pF @ -20V - Output capacitance determining turn-off energy and Miller effect in high-speed switching nodes. |
Pinout & Package
Package: SOT89 - Surface-mount plastic package with exposed collector tab for thermal and electrical connection; dimensions per JEDEC MO-218AA (D2 = 1.71mm, E = 2.50mm, H = 4.10mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Emitter) | Current source terminal in PNP operation | Connected to higher potential rail; carries full load current when device is on. |
| Pin 2 (Base) | Control input for minority-carrier injection | Requires negative current relative to emitter to bias into active/saturation region. |
| Pin 3 (Collector) | Current sink terminal and thermal interface | Exposed metal pad electrically connected to collector; must be soldered to ≥15mm×15mm 1oz Cu for rated 1W dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| High current capability | -5A continuous collector current supports direct driving of solenoids, relays, and high-brightness LED strings without external buffers. |
| Low saturation voltage | VCE(sat) ≤ -1.0V at -4A ensures <4W conduction loss in 12V load-switch applications, reducing thermal stress. |
| Thermally optimized package | SOT89's exposed collector pad and RθJL = 19°C/W allow reliable 1W operation on standard FR4 with minimal heatsinking. |
| AEC-Q101 qualified path | Manufactured in IATF 16949-certified facilities with PPAP capability-enabling use in automotive body electronics requiring change-controlled supply. |
Applications
| Automotive Body Control Unit (BCU) | Industrial 24V DC Power Sequencing |
|---|---|
|
Use Scenario: Switching 12V/24V loads such as door locks, window motors, and interior lighting in OEM BCU modules. IC Role / Device Role / Timing Role: High-side PNP switch controlled by microcontroller GPIO with base resistor network. Use Value: -5A rating and -1.0V VCE(sat) minimize voltage drop and self-heating during sustained actuation cycles. |
Use Scenario: Enabling/disabling downstream 24V rails in programmable logic controllers and sensor hubs. IC Role / Device Role / Timing Role: Load switch providing inrush current limiting and reverse-polarity protection via emitter-follower configuration. Use Value: VEBO = -6V and robust SOA support safe operation with capacitive loads up to 1000µF. |
| LED Driver for Commercial Lighting | Linear Regulator Pass Element |
|
Use Scenario: Constant-current sink for multi-string white LED arrays in streetlight and parking garage fixtures. IC Role / Device Role / Timing Role: Current-regulating pass transistor in analog dimming loop with op-amp feedback. Use Value: hFE stability over -55°C to +150°C ensures consistent current regulation across ambient extremes. |
Use Scenario: Series pass element in low-noise 5V/3.3V linear regulators powering analog sensors and precision ADCs. IC Role / Device Role / Timing Role: Voltage-controlled current source operating in active region with fixed base bias. Use Value: Low VCE(sat) and tight hFE distribution reduce dropout voltage and improve line/load regulation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP medium-power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD127G | VCEO = -100V, IC = -2A, hFE = 30–120 - higher voltage rating but lower current and gain. | Better suited for high-voltage flyback snubbers; insufficient for 5A load switching. | Select only if system requires >-20V blocking with lower current demand and no thermal derating constraints. |
| 2DB1386Q-13 | Same package and structure, but hFE = 120–270 - lower minimum gain and tighter max limit than 2DB1386R-13. | Acceptable where base drive margin is ample and gain variation is less critical (e.g., simple on/off control). | Choose when cost sensitivity outweighs need for higher guaranteed hFE in closed-loop current regulation. |
Compared with MJD127G and 2DB1386Q-13, the 2DB1386R-13 uniquely balances -5A current, -20V rating, and 180–390 hFE range-making it optimal for thermally constrained, high-gain-stability applications like automotive load switching and precision linear regulation.
Availability
2DB1386R-13 is available at Aetrix Electronics and suitable for automotive body control units, industrial 24V power sequencing, and commercial LED driver designs requiring stable component supply and long-term manufacturing continuity.
Supply support for 2DB1386R-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with design, manufacturing, and test operations across Asia and the U.S.
The 2DB1386R-13 belongs to Diodes' medium-power bipolar transistor product line, engineered for robust performance in automotive, industrial, and lighting applications demanding high current, low saturation loss, and AEC-Q101-aligned reliability.
FAQ
Is 2DB1386R-13 AEC-Q101 qualified?
No, the 2DB1386R-13 itself is not pre-qualified to AEC-Q101, but Diodes states it is manufactured in IATF 16949-certified facilities and supports PPAP documentation upon request-enabling customer-led qualification for automotive applications requiring specific change control.
What is the recommended PCB layout for thermal performance?
Use a minimum 15mm × 15mm single-sided 1 oz copper pour connected directly to the exposed collector pad (Pin 3); include ≥4 thermal vias (0.3mm diameter) under the pad tied to inner-layer ground or power planes to achieve the rated 1W power dissipation at TA = +25°C.
How does 2DB1386R-13 differ from 2DB1386Q-13?
The 2DB1386R-13 has higher guaranteed hFE (180–390 vs. 120–270 for Q-grade) at IC = -0.5A/VCE = -2V, reflecting tighter binning for applications needing consistent current gain-such as analog current mirrors or feedback amplifiers where gain tolerance impacts accuracy.
Can 2DB1386R-13 replace an NPN transistor in circuit design?
No-it is a PNP device with opposite polarity and current flow direction; direct substitution would invert logic and violate biasing conditions. Use its complementary NPN counterpart 2DD2098 for matched pair designs or redesign bias networks to accommodate PNP topology.
2DB1386R-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-243AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 5 A
- Voltage - Collector Emitter Breakdown (Max):
- 20 V
- Vce Saturation (Max) @ Ib, Ic:
- 1V @ 100mA, 4A
- Current - Collector Cutoff (Max):
- 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 180 @ 500mA, 2V
- Power - Max:
- 1 W
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-89-3
2DB1386R-13 FAQ
1.How can I place an order for 2DB1386R-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2DB1386R-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2DB1386R-13 reliable?
The price and inventory of 2DB1386R-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2DB1386R-13 is usually 5 days.
3.What payment methods are accepted for 2DB1386R-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2DB1386R-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2DB1386R-13?
2DB1386R-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2DB1386R-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2DB1386R-13?
For technical support, including 2DB1386R-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2DB1386R-13 requirements.
6.How does Aetrix verify that 2DB1386R-13 is sourced from the original manufacturer or authorized distributors?
All 2DB1386R-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2DB1386R-13 meets industry standards.
7.What is the process for return or replacement of 2DB1386R-13?
All 2DB1386R-13 units undergo pre-shipment inspection (PSI). If there is an issue with 2DB1386R-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2DB1386R-13 part is unused and in its original packaging.
Return procedure for 2DB1386R-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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