Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated 2DD1664R-13

Part No.:
2DD1664R-13
Manufacturer:
Diodes Incorporated
Category:
Single Bipolar Transistors
Package:
TO-243AA
Datasheet:
Aetrix2DD1664R-13.pdf
Description:
TRANS NPN 32V 1A SOT-89-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,470

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

2DD1664R-13 from Diodes Incorporated is a 32V NPN surface-mount transistor in SOT89 package, rated for 1A continuous collector current and 40V collector-base breakdown voltage, with hFE of 180–390 at IC = 100mA/VCE = 3V, used in medium-power switching and amplification circuits such as DC-DC converter control stages and automotive load drivers.

For engineers reviewing the 2DD1664R-13 datasheet, 2DD1664R-13 pinout, 2DD1664R-13 application, or 2DD1664R-13 equivalent, key selection criteria include VCEO = 32V, IC = 1A, hFE range, thermal resistance (RθJC = 18°C/W), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This NPN bipolar junction transistor employs epitaxial planar die construction for stable gain and low leakage, with complementary PNP type 2DB1132 available for push-pull configurations. Its SOT89 package features an exposed collector pad for enhanced thermal dissipation.

Rated for operation from –55°C to +150°C, it supports pulsed switching up to 2A peak current and delivers fT = 280MHz at IE = 50mA/VCE = 5V, enabling use in medium-frequency amplifier and switch-mode driver applications.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 32 V - Maximum safe collector-emitter voltage before breakdown under open-base conditions.
IC (continuous) 1 A - Continuous collector current rating defining maximum steady-state power switching capability.
hFE 180–390 - DC current gain range at IC = 100mA/VCE = 3V, critical for base drive sizing in linear or saturated switching.
VCE(SAT) 120–400 mV - Saturation voltage at IC = 500mA/IB = 50mA, directly impacting conduction loss in switch applications.
fT 280 MHz - Transition frequency indicating usable bandwidth for small-signal amplification or high-speed switching.
RθJC 18 °C/W - Junction-to-case thermal resistance, enabling thermal design when mounting the exposed collector pad to PCB copper.
AEC-Q101 Qualified - Meets stress-test requirements for automotive electronics, including temperature cycling and HBM ESD (4 kV).

Pinout & Package

SOT89 package with molded plastic case, UL 94V-0 flammability rating, matte tin terminals, and exposed collector pad for thermal management. Weight: 0.055 g.

Pin/Terminal Circuit Role Design Meaning
Collector (C) Main current-carrying terminal, connected to exposed metal tab Primary heat path to PCB; must be soldered to ≥15 mm² 1 oz copper for rated 1 W power dissipation.
Emitter (E) Current return path, common reference for base drive Low-impedance output node in emitter-follower or grounded-emitter configurations.
Base (B) Control input for bipolar current amplification Requires current-limited drive (e.g., 50 mA typical for 500 mA IC) to ensure saturation.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive under-hood applications including engine control modules and body electronics.
Exposed collector pad Enables RθJC = 18°C/W, supporting 1 W continuous dissipation with minimal PCB copper area.
High hFE bin (R-grade) Guaranteed 180–390 gain ensures consistent base drive requirements across production lots.
Green, halogen-free construction Meets RoHS 3 (2015/863/EU) and Diodes' "Green" standard (<900 ppm Br/Cl, <1000 ppm Sb).
ESD robustness HBM rating of 4 kV allows handling in standard assembly environments without special precautions.

Applications

Automotive Lighting Control DC-DC Converter Switch Driver

Use Scenario: Driving LED headlamp arrays or relay coils in vehicle body control modules.

IC Role / Device Role / Timing Role: Medium-power NPN switch controlling 500–800 mA loads with PWM dimming or on/off sequencing.

Use Value: VCEO = 32V withstands automotive load-dump transients; hFE ≥ 180 reduces base drive burden on microcontroller GPIO.

Use Scenario: Active switch in buck converter topologies for 12 V to 5 V/3.3 V point-of-load regulation.

IC Role / Device Role / Timing Role: Saturated switch operating at ≤200 kHz, driven by gate driver or controller PWM output.

Use Value: VCE(SAT) ≤ 400 mV limits conduction loss; RθJC = 18°C/W enables thermal stability without heatsink.

Industrial Sensor Interface Power Supply Enable Circuit

Use Scenario: Amplifying low-level analog signals from pressure or temperature sensors before ADC sampling.

IC Role / Device Role / Timing Role: Common-emitter amplifier stage with fixed bias network and emitter degeneration.

Use Value: fT = 280 MHz supports bandwidth >10 MHz for fast transient response; low ICBO ≤ 100 nA minimizes offset drift.

Use Scenario: Enabling/disabling auxiliary rails (e.g., USB VBUS, display backlight) via MCU-controlled logic signal.

IC Role / Device Role / Timing Role: High-side or low-side enable switch with fast turn-on/turn-off controlled by digital output.

Use Value: ton/toff < 100 ns (typical) ensures clean rail sequencing; AEC-Q101 ensures reliability in industrial control panels.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
MJD127G Higher VCEO = 100V, lower hFE = 30–120, TO-252 package Better suited for higher-voltage industrial motor drives; less suitable for space-constrained automotive PCBs Select when >60V blocking is required and thermal mass permits larger footprint.
ZTX653 Same SOT89 package, VCEO = 30V, hFE = 200–450, but not AEC-Q101 qualified Acceptable for commercial-grade consumer power supplies, not automotive systems Choose only for cost-sensitive non-automotive designs where qualification is not mandated.

Compared with MJD127G and ZTX653, the 2DD1664R-13 uniquely balances AEC-Q101 compliance, SOT89 form factor, and high-gain bin-making it optimal for space- and reliability-constrained automotive and industrial switching where 32V blocking suffices.

Availability

2DD1664R-13 is available at Aetrix Electronics and suitable for automotive lighting control, DC-DC converter switch drivers, and industrial sensor interface circuits requiring stable component supply and long-term lifecycle support.

Supply support for 2DD1664R-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets since 1960.

The 2DD1664R-13 belongs to Diodes' AEC-Q101-qualified bipolar transistor family, engineered for medium-power switching and amplification in harsh-environment applications where thermal stability and gain consistency are critical.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The 2DD1664R-13 has an operating junction temperature range of –55°C to +150°C. For continuous operation at full 1 A collector current, thermal design must ensure TJ remains ≤150°C-achievable with ≥50 mm² 1 oz copper per the datasheet's derating curve and RθJA = 60°C/W condition.

Is the SOT89 footprint compatible with standard reflow profiles?

Yes-the SOT89 package uses matte tin terminations and complies with J-STD-020 moisture sensitivity level 1, allowing standard Pb-free reflow profiles (peak 260°C) without pre-bake. The exposed collector pad requires adequate stencil aperture and solder paste volume to ensure void-free thermal attachment.

How does the hFE binning differ between 2DD1664P/Q/R variants?

The 2DD1664P (hFE = 82–180), Q (120–270), and R (180–390) grades are binned at IC = 100mA/VCE = 3V. The R-grade guarantees minimum hFE = 180, reducing base drive variability in production designs where consistent saturation is essential.

Can this transistor replace a MOSFET in low-side switching applications?

No-it is a bipolar transistor requiring continuous base current to maintain saturation, unlike MOSFETs that need only gate charge. For low-side switching above ~100 kHz or where drive power efficiency matters, a MOSFET is preferred; the 2DD1664R-13 excels in DC or low-frequency (<50 kHz) applications with simple BJT drive circuitry.

2DD1664R-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-243AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
1 A
Voltage - Collector Emitter Breakdown (Max):
32 V
Vce Saturation (Max) @ Ib, Ic:
400mV @ 50mA, 500mA
Current - Collector Cutoff (Max):
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
180 @ 100mA, 3V
Power - Max:
1 W
Frequency - Transition:
280MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-89-3

2DD1664R-13 FAQ

1.How can I place an order for 2DD1664R-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2DD1664R-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2DD1664R-13 reliable?

The price and inventory of 2DD1664R-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2DD1664R-13 is usually 5 days.

3.What payment methods are accepted for 2DD1664R-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2DD1664R-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2DD1664R-13?

2DD1664R-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2DD1664R-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2DD1664R-13?

For technical support, including 2DD1664R-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2DD1664R-13 requirements.

6.How does Aetrix verify that 2DD1664R-13 is sourced from the original manufacturer or authorized distributors?

All 2DD1664R-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2DD1664R-13 meets industry standards.

7.What is the process for return or replacement of 2DD1664R-13?

All 2DD1664R-13 units undergo pre-shipment inspection (PSI). If there is an issue with 2DD1664R-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2DD1664R-13 part is unused and in its original packaging.

Return procedure for 2DD1664R-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2DD1664R-13 Tags

  • 2DD1664R-13
  • 2DD1664R-13 PDF
  • 2DD1664R-13 Datasheet
  • 2DD1664R-13 Specifications
  • 2DD1664R-13 Images
  • Diodes Incorporated
  • Diodes Incorporated 2DD1664R-13
  • Buy 2DD1664R-13
  • 2DD1664R-13 Price
  • 2DD1664R-13 Distributor
  • 2DD1664R-13 Supplier
  • 2DD1664R-13 Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER