Diodes Incorporated 2DD1766R-13

Overview

2DD1766R-13 from Diodes Incorporated is an AEC-Q101 qualified NPN medium-power surface-mount transistor in SOT89-3L package, featuring V_CEO = 32 V, I_C = 2 A, h_FE = 180–390 (at I_C = 0.5 A), V_CE(SAT) = 0.3–0.8 V (at I_C = 2 A), and f_T = 220 MHz - used in automotive body control modules for load switching and DC-DC converter driver stages.

For engineers reviewing the 2DD1766R-13 datasheet, 2DD1766R-13 pinout, 2DD1766R-13 application, or 2DD1766R-13 equivalent, key selection criteria include guaranteed h_FE binning (R-grade), AEC-Q101 qualification status, SOT89-3L thermal performance (R_θJA = 125 °C/W), and direct replacement guidance to FCX491ATA.

Technical Context

This NPN bipolar junction transistor employs epitaxial planar die construction for stable gain and low saturation voltage. It operates with a maximum collector-emitter voltage of 32 V and supports continuous collector current up to 2 A at T_A = +25°C, with derating above 25°C per the published power dissipation curve.

The device is characterized under pulsed conditions (300 µs, ≤2% duty cycle) for safe operating area validation. Its transition frequency of 220 MHz enables use in medium-speed switching and analog amplification where bandwidth exceeds 50 MHz, while its 5 V V_EBO rating limits base-emitter reverse bias applications.

Key Specifications

Pinout & Package

Package: SOT89-3L - 3-pin surface-mount plastic package with exposed collector tab for thermal enhancement; JEDEC-compliant outline (A = 1.50 mm, D = 4.50 mm, E = 2.50 mm); moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-power switching applications.

Compared with 2DD1766R-13, FCX491ATA offers marginally better saturation voltage and identical gain binning in the same qualified package, while 2DB1188 serves only as a complementary partner-not a functional alternative-in dual-transistor topologies.

Availability

2DD1766R-13 is available at Aetrix Electronics and suitable for automotive body control modules, engine control units, and HVAC subsystems requiring stable component supply amid long product lifecycles and stringent qualification traceability.

Supply support for 2DD1766R-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The 2DD1766R-13 belongs to Diodes' AEC-Q101 qualified bipolar transistor family, engineered specifically for automotive power switching and signal conditioning where reliability under thermal and mechanical stress is mandatory.

FAQ

Is 2DD1766R-13 still in active production?

No - Diodes Incorporated has officially discontinued the 2DD1766R-13 and designated it as obsolete per DS31167 Rev. 5-4 (March 2024). The recommended replacement is FCX491ATA, which maintains identical SOT89-3L packaging, gain binning, and AEC-Q101 qualification.

What is the maximum junction temperature for reliable operation?

The absolute maximum junction temperature is +150°C, with continuous operation supported from −55°C to +150°C ambient. Derating begins at +25°C per the published R_θJA = 125 °C/W curve; at 85°C ambient, maximum continuous power drops to 0.52 W.

Can 2DD1766R-13 be used in linear amplifier configurations?

Yes - its f_T = 220 MHz and h_FE stability across I_C = 0.1–1 A support Class-A or AB amplifier designs, provided V_CE remains ≤32 V and power dissipation stays within derated limits using appropriate heatsinking on the collector tab.

Does the SOT89-3L package require special PCB layout considerations?

Yes - the exposed collector tab must be soldered to a minimum 100 mm² copper thermal pad with ≥4 thermal vias (0.3 mm diameter) to ground plane to achieve rated 1 W power dissipation. Pad dimensions must match Diodes' suggested layout (D = 4.50 mm, E = 2.50 mm) to ensure mechanical reliability and thermal performance.