Microchip Technology 2N1711

Overview

2N1711 from STMicroelectronics is a silicon planar epitaxial NPN bipolar junction transistor in TO-39 metal can package, designed for high-performance amplifier, oscillator, and switching circuits. It delivers low-noise amplification (NF = 3.5–8 dB at 1 kHz), DC current gain hFE = 75–130 at IC = 10 mA, and fT = 70–100 MHz, enabling RF and audio preamplifier use in instrumentation and communication receivers.

For engineers reviewing the 2N1711 datasheet, 2N1711 pinout, 2N1711 application, or 2N1711 equivalent, key selection criteria include its low-noise figure, high fT, TO-39 thermal performance (Rthj-case = 50 °C/W), V(BR)CBO = 75 V, and verified hFE stability across -55 °C to 150 °C operating range.

Technical Context

The 2N1711 operates as a general-purpose RF/low-noise NPN BJT with fixed-emitter bias capability. Its epitaxial planar structure ensures consistent hFE (min 75 at IC = 10 mA), low CEBO (50–80 pF), and controlled saturation behavior (VCE(sat) ≤ 1.5 V at IC = 150 mA/IB = 15 mA).

Thermal design is enabled by its metal TO-39 case: Rthj-case = 50 °C/W allows 3 W dissipation at TC ≤ 25 °C, while Rthj-amb = 187.5 °C/W limits ambient operation without heatsinking. Junction temperature is rated to 175 °C, supporting industrial and military-grade deployment.

Key Specifications

Pinout & Package

Package: TO-39 metal can (Jedec standard), 3-terminal, hermetically sealed, with case electrically connected to collector. Dimensions: A = 12.7 mm, D = 6.6 mm, E = 8.5 mm, F = 9.4 mm, G = 5.08 mm, H = 1.2 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low-noise amplifier and switching applications.

Compared with 2N2222A and BC548B, the 2N1711 offers superior thermal management (TO-39 vs. TO-18/TO-92), guaranteed low-noise performance, and tighter hFE distribution-making it the preferred choice for mission-critical RF and industrial signal conditioning where parameter consistency and junction temperature control are essential.

Availability

2N1711 is available at Aetrix Electronics and suitable for RF oscillator circuits, low-noise audio preamplifiers, and industrial sensor signal conditioning requiring stable component supply and long-term manufacturability.

Supply support for 2N1711 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and communications markets.

The 2N1711 belongs to ST's legacy high-reliability discrete transistor product line, engineered specifically for demanding analog signal chain applications where low noise, thermal stability, and parameter consistency are non-negotiable.

FAQ

Is the 2N1711 pin-compatible with the 2N2222?

No-the 2N1711 uses TO-39 metal can packaging with collector connected to the case, while the 2N2222 typically uses TO-18 or plastic TO-92 packages with isolated collector. Pin assignment differs: TO-39 pins are arranged radially with collector as case, emitter and base on leads; TO-18 has defined lead order (E-B-C). Mechanical and thermal interfaces are incompatible.

What is the maximum safe continuous collector current at 70 °C ambient?

At 70 °C ambient, derating applies: Ptot drops linearly from 0.8 W at 25 °C to 0 W at 150 °C. At 70 °C, max dissipation ≈ 0.52 W. With VCE(sat) ≈ 1.0 V and hFE ≥ 100, IC(max) ≈ 520 mA-but absolute rating remains IC = 500 mA. Sustained operation above 350 mA requires heatsinking to maintain TC ≤ 100 °C.

Does the 2N1711 have a specified avalanche rating?

No-ST's 2N1711 datasheet does not specify avalanche energy (EAS) or ruggedness testing. It is not characterized for unclamped inductive switching. For such applications, ST recommends dedicated avalanche-rated transistors like the BUWxx series or protected MOSFETs with integrated clamping diodes.

Can the 2N1711 be used in Class A amplifier stages with 24 V supply?

Yes-VCBO = 75 V and V(BR)CER = 50 V allow safe operation with 24 V collector supply in common-emitter configuration. To avoid thermal runaway, bias must limit IC to ≤200 mA (derated for Tj), use emitter degeneration, and ensure case temperature stays ≤80 °C via heatsinking or airflow per Rthj-case = 50 °C/W.