Good-Ark Semiconductor 2N2219A

Overview

2N2219A from STMicroelectronics is a silicon planar epitaxial NPN bipolar junction transistor in TO-39 metal package, designed for high-speed switching at up to 500 mA collector current. It features V_CEO = 30 V, V_CBO = 60 V, h_FE = 40–100 (at I_C = 150 mA), V_CE(sat) = 0.4 V (I_C = 150 mA, I_B = 15 mA), and f_T = 250 MHz - used in pulse amplifiers, relay drivers, and digital logic interface circuits.

For engineers reviewing the 2N2219A datasheet, 2N2219A pinout, 2N2219A application, or 2N2219A equivalent, key selection criteria include saturation voltage under defined drive conditions, DC current gain linearity across 0.1–500 mA, thermal resistance (R_{th j-case} = 50 °C/W), safe operating area limits, and TO-39 mechanical compatibility with legacy through-hole PCB layouts.

Technical Context

The 2N2219A operates as a medium-power NPN switch with base-controlled current amplification, optimized for fast turn-on/turn-off via low stored charge and moderate f_T. Its planar epitaxial structure ensures stable h_FE over temperature and current, while the TO-39 metal can provides robust thermal conduction and EMI shielding.

It supports pulsed operation (300 µs, 1% duty cycle) up to 0.8 W at T_amb ≤ 25 °C, with guaranteed breakdown margins: V_(BR)CEO ≥ 30 V at I_C = 10 mA and V_(BR)CBO ≥ 60 V at I_E = 0. Leakage is tightly specified: I_CBO ≤ 10 nA at V_CB = 50 V, 25 °C.

Key Specifications

Pinout & Package

Package: TO-39 metal can with center lead (Emitter), left lead (Base), right lead (Collector) when viewed from top with tab at 12 o'clock orientation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Compared with 2N2219A, the 2N2222A trades thermal robustness and mechanical durability for higher small-signal gain and smaller footprint, while the PN2222A sacrifices shielding and thermal efficiency for lowest unit cost and SMT compatibility - all three differ in package-driven reliability, not core switching function.

Availability

2N2219A is available at Aetrix Electronics and suitable for relay drivers, pulse amplifiers, logic level shifters, and analog sample-and-hold circuits requiring stable component supply and long-term obsolescence management.

Supply support for 2N2219A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, delivering discrete, analog, and microcontroller solutions for industrial, automotive, and power applications.

The 2N2219A belongs to ST's legacy high-reliability bipolar transistor family, engineered for ruggedized through-hole switching in mission-critical analog and mixed-signal systems where thermal stability and mechanical integrity are non-negotiable.

FAQ

What is the maximum continuous collector current for 2N2219A at 70°C ambient?

At T_amb = 70 °C, derating applies per R_{th j-amb} = 187.5 °C/W. With T_j(max) = 175 °C, allowable ΔT = 105 °C → P_diss ≤ 0.56 W. Using V_CE(sat) ≈ 0.5 V, max continuous I_C ≈ 1.1 A - but absolute rating remains 0.8 A due to bond wire and metallization limits. Designers must observe both thermal and absolute ratings.

Can 2N2219A replace 2N2222 in existing TO-18 footprints?

No - 2N2219A uses TO-39 (3-lead metal can, ~9.4 mm diameter), while 2N2222 uses TO-18 (~4.7 mm diameter). Lead spacing, hole size, and thermal pad requirements differ. Mechanical redesign is required. Electrical substitution is possible only after verifying V_CE(sat), h_FE, and f_T meet circuit timing and gain targets.

Is 2N2219A suitable for linear amplifier applications?

It is not optimized for linear operation. While functional in Class-A stages, its h_FE variation above 100 mA and lack of specified linearity parameters (e.g., harmonic distortion, intermodulation) make it less suitable than purpose-designed RF or audio transistors. Use only in saturated-switching or low-distortion pulse-amplifier roles.

Does 2N2219A have JEDEC registration and military-grade variants?

Yes - 2N2219A is JEDEC-registered and was historically offered in MIL-PRF-19500/223 (JAN2N2219A) with extended temperature range (–65 °C to +200 °C) and screening per MIL-STD-883. STMicroelectronics discontinued active military production, but commercial 2N2219A retains identical die and TO-39 construction per original spec.