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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Microchip Technology 2N2222AE4

Name: 2N2222AE4
Brand: Microchip Technology
SKU: 2N2222AE4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N2222AE4

Manufacturer:: Microchip Technology

Category:: Single Bipolar Transistors

Package:: TO-206AA, TO-18-3 Metal Can

Datasheet:: 2N2222AE4.pdf

Description:: TRANS NPN 50V 0.8A TO-18

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2N2222AE4 from Microsemi is an NPN silicon switching transistor qualified per MIL-PRF-19500/255, designed for general-purpose amplification and fast-switching applications in military, aerospace, and industrial systems. It features V_CEO = 50 V, I_C = 800 mA, P_T = 0.5 W, h_FE = 40–100 at I_C = 10 mA, and TO-18 (TO-206AA) metal-can package with 3-pin configuration.

For engineers reviewing the 2N2222AE4 datasheet, 2N2222AE4 pinout, 2N2222AE4 application, or 2N2222AE4 equivalent, key selection criteria include its MIL-specified reliability, low saturation voltage (V_CE(sat) ≤ 0.3 V at I_C = 150 mA/I_B = 15 mA), fast switching (t_on ≤ 35 ns, t_off ≤ 300 ns), and operation across –65°C to +200°C junction temperature range.

Technical Context

This device operates as a discrete bipolar junction transistor in common-emitter configuration, supporting DC amplification and digital on/off switching via base current control. Its design meets Class S (JANS) screening requirements when ordered as 2N2222AUBC, with internal collector-to-case connection enabling thermal grounding in high-reliability mounts.

The 2N2222AE4 exhibits fixed gain-bandwidth trade-offs: |h_fe| ≥ 2.5 at 100 MHz, C_obo = 8.0 pF, and C_ibo = 25 pF - parameters critical for RF-coupled preamp stages and pulse-shaping circuits where capacitive loading affects rise time and stability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	50 Vdc - Maximum safe collector-emitter voltage before breakdown under open-base conditions.
I_C	800 mAdc - Continuous collector current rating defining maximum load drive capability.
P_T	0.5 W @ T_A = +25°C - Total power dissipation limit; derates linearly above +37.5°C ambient.
h_FE	40–100 @ I_C = 10 mA, V_CE = 10 V - DC current gain range determining base drive sizing for saturation.
V_CE(sat)	≤ 0.3 V @ I_C = 150 mA, I_B = 15 mA - Low saturation voltage minimizes conduction loss in switch-mode operation.
t_on/t_off	≤ 35 ns / ≤ 300 ns - Switching speed metrics validated per MIL-PRF-19500/255 test methods for timing-critical logic interfaces.
T_J	–65°C to +200°C - Extended junction temperature range enabling use in downhole, avionics, and space-grade thermal environments.

Pinout & Package

2N2222AE4 uses the TO-18 (TO-206AA) metal-can package with three leads and case-connected collector. The package provides hermetic sealing and direct thermal path to mounting surface.

Pin/Terminal	Circuit Role	Design Meaning
Lead 1	Emitter	Current sink terminal; referenced to ground or negative rail in common-emitter topology.
Lead 2	Base	Control input requiring ~15 mA drive for full saturation at 150 mA collector load.
Lead 3	Collector	Current source terminal; internally bonded to metal case for thermal and EMI shielding.

Key Features

Feature	Design Value
MIL-PRF-19500/255 qualification	Meets Level S (JANS) screening requirements including burn-in, temperature cycling, and hermeticity testing.
Collector-to-case connection	Enables direct thermal coupling to heatsink or chassis ground, improving power handling and noise immunity.
Low V_CE(sat)	0.3 V typical at rated switching current reduces power loss and self-heating in high-duty-cycle applications.
Wide operating temperature	–65°C to +200°C junction range supports deployment in extreme environmental conditions without derating.
Controlled capacitance profile	C_obo = 8.0 pF and C_ibo = 25 pF support stable high-frequency amplifier biasing up to 100 MHz.

Applications

Industrial Motor Control	Aerospace Sensor Interface
Use Scenario: Driving small solenoids and relay coils in programmable logic controller (PLC) output modules. IC Role / Device Role / Timing Role: Discrete NPN switch providing galvanically isolated load control with fast turn-on/turn-off response. Use Value: 35 ns turn-on time ensures precise timing alignment with PLC scan cycles; 0.3 V saturation voltage limits coil driver losses below 45 mW at 150 mA.	Use Scenario: Amplifying low-level analog signals from radiation-hardened pressure and temperature transducers in satellite subsystems. IC Role / Device Role / Timing Role: DC-coupled preamplifier stage with stable h_FE and minimal drift over –55°C to +125°C operating range. Use Value: Guaranteed h_FE ≥ 40 at 10 mA enables predictable gain setting; TO-18 hermetic package prevents parameter shift due to outgassing in vacuum environments.
Military Radio Transceivers	Downhole Oilfield Electronics
Use Scenario: Keying RF power amplifier stages in HF/VHF tactical radios using pulse-width modulated base drive. IC Role / Device Role / Timing Role: High-speed switching element controlling PA enable/disable with sub-100 ns transition fidelity. Use Value: 300 ns max turn-off time maintains clean RF envelope edges; 200°C max junction rating accommodates sealed enclosure thermal buildup.	Use Scenario: Signal conditioning and level shifting in measurement-while-drilling (MWD) tools exposed to >175°C borehole temperatures. IC Role / Device Role / Timing Role: Temperature-stable active load in precision current-source circuits for sensor excitation. Use Value: Validated operation to +200°C allows direct placement near sensors without remote mounting; MIL-spec screening ensures reliability after thermal shock cycling.

Industrial Motor Control

Aerospace Sensor Interface

Use Scenario: Driving small solenoids and relay coils in programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: Discrete NPN switch providing galvanically isolated load control with fast turn-on/turn-off response.

Use Value: 35 ns turn-on time ensures precise timing alignment with PLC scan cycles; 0.3 V saturation voltage limits coil driver losses below 45 mW at 150 mA.

Use Scenario: Amplifying low-level analog signals from radiation-hardened pressure and temperature transducers in satellite subsystems.

IC Role / Device Role / Timing Role: DC-coupled preamplifier stage with stable h_FE and minimal drift over –55°C to +125°C operating range.

Use Value: Guaranteed h_FE ≥ 40 at 10 mA enables predictable gain setting; TO-18 hermetic package prevents parameter shift due to outgassing in vacuum environments.

Military Radio Transceivers

Downhole Oilfield Electronics

Use Scenario: Keying RF power amplifier stages in HF/VHF tactical radios using pulse-width modulated base drive.

IC Role / Device Role / Timing Role: High-speed switching element controlling PA enable/disable with sub-100 ns transition fidelity.

Use Value: 300 ns max turn-off time maintains clean RF envelope edges; 200°C max junction rating accommodates sealed enclosure thermal buildup.

Use Scenario: Signal conditioning and level shifting in measurement-while-drilling (MWD) tools exposed to >175°C borehole temperatures.

IC Role / Device Role / Timing Role: Temperature-stable active load in precision current-source circuits for sensor excitation.

Use Value: Validated operation to +200°C allows direct placement near sensors without remote mounting; MIL-spec screening ensures reliability after thermal shock cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PN2222A	Commercial-grade version; no MIL qualification, lower temperature range (–65°C to +150°C), same TO-92 package.	Not suitable for aerospace or defense programs requiring MIL-PRF-19500 compliance or extended temperature operation.	Select PN2222A only for cost-sensitive commercial designs where screening and 200°C operation are unnecessary.
2N2222AUB	Surface-mount ceramic package (UB), JANTXV screening, identical electrical specs but different mechanical form factor and lead count (4-pad).	Requires PCB redesign for SMT assembly; unsuitable for through-hole legacy systems or TO-18 socketed test fixtures.	Choose 2N2222AUB when board space constraints demand SMT integration and JANTXV reliability is required.

Compared with PN2222A and 2N2222AUB, the 2N2222AE4 uniquely combines through-hole TO-18 packaging, full MIL-PRF-19500/255 qualification, and +200°C junction capability - making it the only option for high-reliability, high-temperature, through-hole-switching applications where hermeticity and screening are mandatory.

Availability

2N2222AE4 is available at Aetrix Electronics and suitable for industrial motor control, aerospace sensor interface, military radio transceivers, and downhole oilfield electronics requiring stable component supply across extended temperature and reliability lifecycles.

Supply support for 2N2222AE4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor manufacturer specializing in high-reliability, radiation-tolerant, and defense-grade analog and mixed-signal components.

The 2N2222AE4 belongs to Microsemi's legacy MIL-qualified discrete transistor product line, engineered specifically for mission-critical analog switching and amplification in harsh-environment systems where long-term parametric stability and screening integrity are non-negotiable.

FAQ

What is the package type and pin configuration of the 2N2222AE4?

The 2N2222AE4 uses a TO-18 (TO-206AA) metal-can package with three leads: Lead 1 is emitter, Lead 2 is base, and Lead 3 is collector. The collector is internally connected to the metal case, enabling direct thermal and EMI grounding. This configuration is standardized per MIL-PRF-19500/255 and confirmed in Microsemi's T4-LDS-0060 Rev. 2 datasheet.

Does the 2N2222AE4 meet MIL-PRF-19500/255 requirements?

Yes, the 2N2222AE4 is explicitly qualified per MIL-PRF-19500/255, as stated on the first page of Microsemi's T4-LDS-0060 Rev. 2 datasheet. It meets the "Level S" (JANS) screening requirements including burn-in, temperature cycling, and hermeticity testing - a key differentiator from commercial variants like PN2222A.

What is the maximum operating junction temperature for the 2N2222AE4?

The 2N2222AE4 has a specified operating junction temperature range of –65°C to +200°C, verified in the Absolute Maximum Ratings table of the official datasheet. This extended upper limit distinguishes it from standard 2N2222A variants and supports deployment in downhole, avionics, and space-grade thermal environments.

How does the 2N2222AE4 compare to the PN2222A in terms of reliability and performance?

The 2N2222AE4 exceeds PN2222A in reliability: it carries full MIL-PRF-19500/255 qualification, operates to +200°C (vs. +150°C for PN2222A), and uses a hermetically sealed TO-18 package. Electrically, both share identical V_CEO, I_C, and h_FE specs, but only the 2N2222AE4 guarantees parametric stability under military screening and extreme thermal stress.

Is the collector terminal of the 2N2222AE4 electrically connected to the case?

Yes, the collector terminal of the 2N2222AE4 is internally bonded to the metal case, as documented in Figure 1 notes and the Package Dimensions section of the T4-LDS-0060 Rev. 2 datasheet. This design enables direct thermal conduction to heatsinks and improves EMI shielding - a critical feature for high-reliability analog and RF applications using the 2N2222AE4.

2N2222AE4 Specifications

Product attributes: Attribute value

Manufacturer:: Microchip Technology

Series:: -

Package/Case:: TO-206AA, TO-18-3 Metal Can

Packaging:: Bulk

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 800 mA

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 50mA, 500mA

Current - Collector Cutoff (Max):: 50nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 150mA, 10V

Power - Max:: 500 mW

Frequency - Transition:: -

Operating Temperature:: -65°C ~ 200°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-18 (TO-206AA)

2N2222AE4 FAQ

1.How can I place an order for 2N2222AE4 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N2222AE4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N2222AE4 reliable?

The price and inventory of 2N2222AE4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N2222AE4 is usually 5 days.

3.What payment methods are accepted for 2N2222AE4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N2222AE4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N2222AE4?

2N2222AE4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N2222AE4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N2222AE4?

For technical support, including 2N2222AE4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N2222AE4 requirements.

6.How does Aetrix verify that 2N2222AE4 is sourced from the original manufacturer or authorized distributors?

All 2N2222AE4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N2222AE4 meets industry standards.

7.What is the process for return or replacement of 2N2222AE4?

All 2N2222AE4 units undergo pre-shipment inspection (PSI). If there is an issue with 2N2222AE4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N2222AE4 part is unused and in its original packaging.

Return procedure for 2N2222AE4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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