STMicroelectronics 2N2222AUB1

Overview

2N2222AUB1 from STMicroelectronics is a radiation-hardened NPN bipolar junction transistor (BJT) qualified per ESCC 5201/002 for space-grade flight applications, featuring V_CEO = 50 V, I_C(max) = 0.8 A, h_FE ≥ 100 at 150 mA/10 V, T_J(max) = 200 °C, and 100 krad(Si) total ionizing dose tolerance. It operates in hermetic UB package with metallic lid shielding and is used in low-current precision circuits such as satellite preamplifiers and radiation-tolerant current mirrors.

For engineers reviewing the 2N2222AUB1 datasheet, 2N2222AUB1 pinout, 2N2222AUB1 application, or 2N2222AUB1 equivalent, this page delivers verified radiation assurance data, UB package terminal mapping, post-irradiation gain retention metrics, and ESCC-compliant screening status - critical for high-reliability aerospace signal conditioning and switching designs.

Technical Context

This device implements a planar epitaxial NPN structure optimized for extreme thermal cycling (–65 to +200 °C) and total ionizing dose immunity up to 100 krad(Si) at 0.1 rad(Si)/s. Its DC current gain (h_FE) maintains ≥50 post-irradiation at 150 mA/10 V per ESCC 5201/002 Table 4, with guaranteed V_(BR)CEO ≥ 50 V and V_CE(sat) ≤ 0.3 V under pulsed 150 mA/15 mA drive.

The UB package integrates Pin 4 as a dedicated shield connection to the metallic lid, enabling EMI suppression in RF-sensitive analog front-ends. Thermal resistance R_thJA is 240 °C/W when mounted on a 15 × 15 × 0.6 mm ceramic substrate - a key constraint for derating in sealed spacecraft enclosures.

Key Specifications

Pinout & Package

2N2222AUB1 uses the hermetic UB (Unibody) package: 3-terminal surface-mount ceramic package with integrated metallic lid. Pin 4 is externally accessible and bonded directly to the lid for electromagnetic shielding - not an active semiconductor terminal.

Key Features

Applications

Availability

2N2222AUB1 is available at Aetrix Electronics and suitable for spacecraft telemetry preamplifiers, satellite current mirrors, radiation-tolerant oscillator buffers, and engine control switch drivers requiring stable component supply across extended mission lifetimes.

Supply support for 2N2222AUB1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power ICs, sensors, and space-grade discrete components.

The 2N2222AUB1 belongs to ST's rad-hard discrete transistor product line, engineered specifically for ESCC-qualified space applications demanding immunity to total ionizing dose, extreme temperature cycling, and hermetic reliability.

FAQ

What radiation qualification level does 2N2222AUB1 meet?

2N2222AUB1 meets ESCC 5201/002 specification as an engineering model with full radiation verification test (RVT) reports available at 25, 50, 70, and 100 krad(Si). It is tested at 0.1 rad(Si)/s with post-irradiation electrical validation per Table 4 of DS6561 Rev 25, including h_FE ≥ 50 at 150 mA/10 V after 100 krad exposure.

How is Pin 4 used in the UB package?

Pin 4 in the UB package is a dedicated shield terminal electrically connected to the metallic lid. It is not a semiconductor terminal and must be DC-grounded to provide electromagnetic interference suppression - especially critical in RF-sensitive analog signal paths like oscillator buffers and telemetry receivers.

What is the thermal performance difference between UB and LCC-3 packages?

When mounted on a 15 × 15 × 0.6 mm ceramic substrate, the UB package achieves R_thJA = 240 °C/W versus 350 °C/W for LCC-3. This 31% lower thermal resistance makes UB preferred for higher-power operation (up to 0.73 W) in thermally constrained spacecraft enclosures.

Is 2N2222AUB1 suitable for linear amplifier applications?

Yes - its h_FE ≥ 100 at 150 mA/10 V, low V_CE(sat) ≤ 0.3 V, and tight parameter distribution across temperature (–65 to +200 °C) support Class-A and Class-AB linear amplification in radiation-exposed environments, provided proper biasing and thermal derating are applied per DS6561 Section 1.