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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

STMicroelectronics 2N2907AUB1

Name: 2N2907AUB1
Brand: STMicroelectronics
SKU: 2N2907AUB1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N2907AUB1

Manufacturer:: STMicroelectronics

Category:: Single Bipolar Transistors

Package:: 3-SMD, No Lead

Datasheet:: 2N2907AUB1.pdf

Description:: TRANS PNP 60V 0.5A UB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2N2907AUB1 from STMicroelectronics is a radiation-hardened PNP bipolar junction transistor qualified to ESCC 5202/001 for space-grade applications, featuring −60 V V_CBO, 0.5 A I_C(max), h_FE ≥ 100 at 150 mA/10 V, and operation up to 200 °C junction temperature. It is deployed in low-current precision circuits including preamplifiers, oscillators, and current mirrors within satellite power management and telemetry subsystems.

For engineers reviewing the 2N2907AUB1 datasheet, 2N2907AUB1 pinout, 2N2907AUB1 application, or 2N2907AUB1 equivalent, this page delivers verified radiation tolerance (100 krad), hermetic UB package details, post-irradiation gain retention data, thermal resistance (240 °C/W on ceramic substrate), and ESCC flight-model screening status - all critical for high-reliability aerospace design validation.

Technical Context

This PNP transistor uses epitaxial-base planar technology optimized for total ionizing dose (TID) immunity up to 100 krad(Si) under 0.1 rad(Si)/s irradiation. Its DC current gain remains ≥50 post-irradiation at 150 mA/10 V, with guaranteed V_(BR)CEO ≥ 60 V and V_CE(sat) ≤ 0.4 V under pulsed conditions (300 µs, ≤1.5% duty cycle).

The device operates across −65 °C to +200 °C ambient, supported by a hermetic UB package with lid-connected shielding (Pin 4). Thermal performance is specified with R_thJA = 240 °C/W when mounted on a 15 × 15 × 0.6 mm ceramic substrate - enabling stable biasing in thermally constrained avionics enclosures.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CBO	−60 V: Maximum reverse collector-base voltage before breakdown; ensures safe operation in high-voltage bias networks of radiation-tolerant amplifiers.
I_C(max)	0.5 A: Continuous collector current rating; supports low-power switching and linear regulation in <500 mW dissipation stages.
h_FE	100–300 at 150 mA/10 V: High DC gain enables precise current mirroring and low-base-drive preamplifier designs without external compensation.
T_J(max)	200 °C: Maximum junction temperature; permits deployment in uncooled spacecraft electronics bays exposed to solar heating or internal power dissipation.
Radiation Level	100 krad(Si): Total ionizing dose tolerance confirmed per ESCC 5202/001; validated via lot-level irradiation testing with electrical screening at 25/50/70/100 krad.
Package	UB: Hermetic metal-ceramic package with Pin 4 tied to metallic lid; provides EMI shielding and vacuum-compatible sealing for orbital environments.
V_CE(sat)	0.4 V at I_C = 150 mA, I_B = 15 mA: Low saturation voltage minimizes conduction loss in discrete switch and clamp circuits operating near thermal limits.

Pinout & Package

The 2N2907AUB1 is housed in a hermetic UB package (4-terminal, metal-ceramic) with lid shielding. Pin 4 is internally connected to the metallic lid and must be grounded for EMI suppression in RF-sensitive analog front-ends.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Main current exit terminal; polarity reversed vs NPN; requires negative bias relative to base for forward active operation.
2	Base	Control electrode; 15 mA drive achieves full saturation at 150 mA collector load, enabling direct microcontroller interface with minimal buffering.
3	Collector	Main current entry terminal; connected to most-negative rail in typical PNP switch configuration; rated for −60 V reverse blocking.
4	Lid Shield	Internally bonded to metallic lid; must be externally grounded to suppress electromagnetic interference in telemetry receiver preamps and oscillator tanks.

Key Features

Feature	Design Value
ESCC 5202/001 qualification	Flight-model screening including radiation verification test (RVT) reports at 25/50/70/100 krad - mandatory for ESA mission-critical hardware acceptance.
Hermetic UB packaging	Zero moisture ingress and helium leak rate <1×10⁻⁸ atm·cm³/s; eliminates corrosion risk in long-duration deep-space missions (>15 years).
Post-irradiation h_FE retention	≥50 at 150 mA/10 V after 100 krad exposure - preserves gain stability in closed-loop current sources and feedback amplifiers without recalibration.
Extended temperature range	−65 °C to +200 °C operation - supports deployment in cryogenic instrument modules and high-temperature propulsion control electronics.
Low leakage currents	I_CBO ≤ 10 nA at 50 V (25 °C); ≤10 µA at 150 °C - ensures negligible standby current in battery-backed telemetry memory keep-alive circuits.

Applications

Spacecraft Telemetry Preamp

Satellite Oscillator Bias Stage

Use Scenario: Amplifying weak RF signals from S-band telemetry receivers prior to digitization in LEO satellites.

IC Role / Device Role / Timing Role: PNP common-emitter preamplifier providing 25 dB small-signal gain (h_fe = 2 at 100 MHz) with matched input impedance.

Use Value: Radiation-hardened gain stability ensures consistent signal-to-noise ratio over mission lifetime without gain drift-induced bit errors.

Use Scenario: Biasing the active device in a Colpitts oscillator generating 10–30 MHz reference clocks for attitude determination systems.

IC Role / Device Role / Timing Role: Constant-current source establishing stable DC operating point for frequency-determining LC tank.

Use Value: h_FE ≥ 100 and low V_CE(sat) minimize phase noise contribution while maintaining oscillation margin under thermal cycling.

Current Mirror in ADC Reference

Radiation-Tolerant Power Switch

Use Scenario: Implementing matched current sources in precision voltage reference ICs for SAR ADCs used in scientific payload sensors.

IC Role / Device Role / Timing Role: PNP current mirror leg delivering 100 µA reference current with <0.5% mismatch across −55 °C to +125 °C.

Use Value: Tight h_FE distribution (min 75, typ 200) and low I_CBO enable sub-ppm reference stability in gamma-ray spectrometer front-ends.

Use Scenario: Discrete high-side switch controlling 12 V bus power to redundant command decoders in Mars rover avionics.

IC Role / Device Role / Timing Role: PNP emitter-follower switch with base driven by radiation-hardened FPGA I/O, handling 300 mA peak load.

Use Value: 200 °C T_J(max) and 100 krad tolerance allow uninterrupted operation during planetary surface thermal excursions and solar particle events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP radiation-hardened transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2N2907ARUBG	ESCC Flight model with 100 krad qualification and gold-plated leads; same UB package and electrical specs.	Required for flight hardware where ESA certification documentation (RVT report, certificate of conformance) is mandatory.	Select when full ESCC 5202/001 compliance traceability is required - not suitable for engineering models or ground-test prototypes.
SOC2907ARHRG	LCC-3 package (3-pin, no lid shield), identical ESCC qualification and radiation hardness, same die.	Preferred for surface-mount assembly in compact PCB layouts where hermetic shielding is less critical than board area.	Choose for SWaP-constrained platforms needing automated placement; lacks Pin 4 shielding but offers identical radiation performance.

Compared with 2N2907AUB1, the 2N2907ARUBG adds full flight-model documentation and screening at no electrical cost, while SOC2907ARHRG trades lid shielding for SMT compatibility - enabling trade-offs between EMI resilience and manufacturing scalability in radiation-hardened systems.

Availability

2N2907AUB1 is available at Aetrix Electronics and suitable for spacecraft telemetry preamplifiers, satellite oscillator bias stages, and radiation-tolerant power switches requiring stable component supply across extended mission lifetimes.

Supply support for 2N2907AUB1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and aerospace-grade integrated circuits and discrete devices.

The 2N2907AUB1 belongs to ST's ESCC-qualified discrete transistor product line, engineered specifically for mission-critical space electronics where radiation tolerance, hermetic reliability, and extreme temperature operation are non-negotiable.

FAQ

What radiation qualification level does the 2N2907AUB1 meet?

The 2N2907AUB1 is an engineering model qualified per ESCC 5202/001 with radiation testing performed at 100 krad(Si) under 0.1 rad(Si)/s dose rate. While it shares the same die and process as flight models, it does not include full ESCC flight documentation such as RVT reports or certificate of conformance.

How is Pin 4 used in the UB package?

Pin 4 in the UB package is internally connected to the metallic lid and serves as a dedicated shielding terminal. It must be externally grounded to provide electromagnetic interference suppression - especially critical in low-noise preamplifier and oscillator applications where RF coupling degrades signal integrity.

Can the 2N2907AUB1 replace standard 2N2907A transistors in commercial designs?

No - the 2N2907AUB1 is not a drop-in replacement for commercial 2N2907A parts. It features hermetic UB packaging, radiation-hardened processing, extended temperature range (−65 °C to +200 °C), and ESCC-specific screening. Using it in non-radiation environments incurs unnecessary cost and may require layout changes for Pin 4 grounding.

What is the thermal resistance of the 2N2907AUB1 in its native package?

The 2N2907AUB1 has R_thJA = 240 °C/W when mounted on a 15 × 15 × 0.6 mm ceramic substrate, per DS6095 Rev 15. This value assumes optimal heat spreading through the lid (Pin 4) and substrate; no heatsink is integrated, so PCB copper area and thermal vias directly impact actual junction temperature rise.

2N2907AUB1 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: 3-SMD, No Lead

Packaging:: Tray

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 1.6V @ 50mA, 500mA

Current - Collector Cutoff (Max):: 50nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 150mA, 10V

Power - Max:: 1.8 W

Frequency - Transition:: -

Operating Temperature:: -65°C ~ 200°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: UB

2N2907AUB1 FAQ

1.How can I place an order for 2N2907AUB1 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N2907AUB1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N2907AUB1 reliable?

The price and inventory of 2N2907AUB1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N2907AUB1 is usually 5 days.

3.What payment methods are accepted for 2N2907AUB1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N2907AUB1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N2907AUB1?

2N2907AUB1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N2907AUB1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N2907AUB1?

For technical support, including 2N2907AUB1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N2907AUB1 requirements.

6.How does Aetrix verify that 2N2907AUB1 is sourced from the original manufacturer or authorized distributors?

All 2N2907AUB1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N2907AUB1 meets industry standards.

7.What is the process for return or replacement of 2N2907AUB1?

All 2N2907AUB1 units undergo pre-shipment inspection (PSI). If there is an issue with 2N2907AUB1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N2907AUB1 part is unused and in its original packaging.

Return procedure for 2N2907AUB1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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