Microchip Technology 2N3019

Overview

2N3019 from STMicroelectronics is a silicon planar epitaxial NPN bipolar junction transistor in TO-39 metal package, designed for high-current, high-frequency amplifier stages. It delivers DC current gain (hFE) of 100 at IC = 150 mA, VCE = 10 V; saturation voltage VCE(sat) = 0.2 V at IC = 150 mA/IB = 15 mA; and transition frequency fT = 100 MHz at IC = 50 mA/VCE = 10 V - used in RF driver and broadband power amplification.

For engineers reviewing the 2N3019 datasheet, 2N3019 pinout, 2N3019 application, or 2N3019 equivalent, key selection criteria include its 80 V VCEO rating, 1 A continuous collector current capability, low 0.2 V saturation voltage, 100 MHz fT, and TO-39 thermal resistance (Rthj-case = 30 °C/W), critical for stable RF amplifier biasing and thermal management.

Technical Context

The 2N3019 operates as a medium-power NPN BJT optimized for linear amplification up to VHF range. Its planar epitaxial structure enables tight parameter distribution, while the TO-39 metal case provides robust thermal conduction and EMI shielding - essential for RF driver stages requiring stable gain and low distortion.

It supports pulsed operation (duty cycle ≤1%, pulse width = 300 µs) for transient peak current handling beyond DC ratings. The device exhibits low noise figure (4 dB at IC = 0.1 mA, f = 1 kHz) and moderate junction capacitances (CCBO = 12 pF, CEBO = 60 pF), supporting broadband impedance matching in tuned amplifier designs.

Key Specifications

Pinout & Package

Package: TO-39 metal can with center tab (Case Style TO-39), hermetically sealed, lead-free compatible, and rated for Tj(max) = 175 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF amplifier applications.

Compared with 2N2219A and MPSH10, the 2N3019 uniquely balances 100 MHz bandwidth, 1 A current, and TO-39 thermal robustness - making it optimal for medium-power VHF driver stages where both gain and thermal reliability are required.

Availability

2N3019 is available at Aetrix Electronics and suitable for FM transmitter drivers, UHF signal amplifiers, industrial RF heater controls, and test equipment signal generators requiring stable component supply across extended temperature and RF performance envelopes.

Supply support for 2N3019 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, MCU, and discrete components for industrial, automotive, and communications markets.

The 2N3019 belongs to ST's legacy high-reliability discrete transistor portfolio, developed specifically for RF power amplification and industrial control applications demanding rugged packaging and repeatable parametric performance.

FAQ

Is the 2N3019 RoHS compliant?

Yes, the 2N3019 manufactured by STMicroelectronics is RoHS compliant and lead-free compatible per EU Directive 2011/65/EU. The TO-39 metal package uses matte tin-plated leads and meets JEDEC J-STD-020 moisture sensitivity level MSL-1, with no exemptions required for Pb content.

What is the recommended heatsinking method for continuous 0.8 W operation?

For continuous 0.8 W dissipation, mount the TO-39 case directly to an aluminum heatsink ≥10 cm² surface area using thermally conductive grease and a spring clip or screw. With Rthj-case = 30 °C/W and ambient ≤25 °C, this achieves ~105 °C junction temperature - within the 175 °C Tj(max) limit.

Can the 2N3019 be used in avalanche mode?

No - the 2N3019 is not characterized or rated for avalanche operation. Its absolute maximum VCEO = 80 V is specified under IB = 0, and the datasheet does not define avalanche energy (EAS) or ruggedness curves. Use only within linear or safe-operating-area (SOA) limits defined in the datasheet.

Does the collector tab require electrical isolation from the heatsink?

Yes - the metal case (collector tab) is electrically connected to the collector terminal. If the heatsink is grounded or at a different potential, insulating hardware (mica washer + nylon shoulder washer) must be used to prevent short circuits while maintaining thermal contact.