onsemi 2N3416

Overview

2N3416 from Fairchild Semiconductor is an NPN general-purpose bipolar junction transistor designed for amplification and switching in low-to-medium power circuits, with V_CEO = 50 V, I_C = 500 mA continuous, h_FE = 75–225 at 2 mA/4.5 V, and TO-92 package. It serves in signal amplification stages, relay drivers, and logic-level interface circuits where moderate gain and robust DC performance are required.

For engineers reviewing the 2N3416 datasheet, pinout, applications, or equivalent options, key selection criteria include its verified DC current gain range, thermal resistance (R_θJA = 200 °C/W), saturation voltage (V_CE(sat) ≤ 0.3 V @ 50 mA/3 mA), and compatibility with legacy through-hole PCB layouts using standard TO-92 footprints.

Technical Context

The 2N3416 operates as a silicon NPN BJT with fixed-base biasing capability and linear active-region behavior suitable for Class-A amplifier stages and saturated-switch operation. Its process origin (Fairchild Process 10) ensures consistent h_FE distribution and low leakage (I_CBO ≤ 100 nA @ 25 °C).

Thermal design relies on its R_θJC = 83.3 °C/W and maximum junction temperature of +150 °C, enabling stable operation up to +100 °C ambient when derated per 5.0 mW/°C above 25 °C. The device is not rated for pulsed or high-duty-cycle applications without factory consultation.

Key Specifications

Pinout & Package

2N3416 is housed in a TO-92 plastic package with standardized lead configuration: Emitter (E), Base (B), Collector (C) arranged left-to-right when viewing the flat side with leads downward.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Compared with PN2222A and BC547B, the 2N3416 offers balanced gain (75–225), proven 500 mA switching headroom, and long-standing industrial qualification-making it preferred for cost-sensitive, medium-current analog and switching tasks where reliability across temperature extremes matters.

Availability

2N3416 is available at Aetrix Electronics and suitable for audio pre-amplifiers, relay drivers, DC motor controls, and logic-level translators requiring stable component supply and long-term obsolescence management.

Supply support for 2N3416 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor manufacturer specializing in power management, analog, and discrete devices before its acquisition by ON Semiconductor in 2016.

The 2N3416 belongs to Fairchild's legacy general-purpose BJT family, engineered for broad utility in industrial, consumer, and automotive-adjacent signal conditioning and power switching applications.

FAQ

What is the maximum collector current rating for the 2N3416?

The 2N3416 has a maximum continuous collector current (I_C) rating of 500 mA at T_A = 25 °C. This rating assumes proper thermal management; operation above 25 °C requires linear derating by 5.0 mW/°C, and pulsed or high-duty-cycle use must be reviewed with Fairchild's application engineering team per datasheet Note 2.

Is the 2N3416 pin-compatible with the 2N2222?

No-the 2N3416 and 2N2222 share the TO-92 package but differ in internal die characteristics and guaranteed parameter ranges. While both are NPN BJTs, the 2N3416 specifies h_FE = 75–225 and V_CE(sat) ≤ 0.3 V, whereas the 2N2222 typically exhibits wider h_FE variation and higher V_CE(sat); direct substitution requires circuit validation.

What does "Process 10" mean for the 2N3416?

"Process 10" refers to Fairchild's proprietary silicon fabrication process used to manufacture the 2N3416, which defines its electrical consistency, leakage performance (e.g., I_CBO ≤ 100 nA), and h_FE distribution. This process is documented in Fairchild's PN100A reference specification and distinguishes the 2N3416 from variants made on other lines.

Can the 2N3416 be used in switching power supplies?

The 2N3416 is not recommended for switching power supply applications. Its 500 mA I_C and 625 mW P_D ratings, combined with lack of specified switching speed (f_T) or charge storage data, make it unsuitable for high-frequency PWM or flyback topologies. Use purpose-built power switches like MOSFETs or dedicated BJT drivers instead.

What is the emitter-base breakdown voltage (V_EBO) of the 2N3416?

The emitter-base breakdown voltage (V_EBO) of the 2N3416 is 5.0 V, measured at I_E = 10 µA with collector open. Exceeding this voltage risks irreversible junction damage; design practices must ensure base drive remains within ±5 V relative to emitter, especially during transient or reverse-bias conditions.