onsemi 2N3417_D75Z

Overview

2N3417_D75Z from Fairchild Semiconductor is an NPN general-purpose amplifier and switch rated for continuous collector current up to 500 mA, with V_CEO = 50 V, h_FE = 180–540 at I_C = 2.0 mA, and TO-92 package. It serves in low-to-medium power linear amplification and digital switching circuits in industrial control interfaces and signal conditioning stages.

For engineers reviewing the 2N3417_D75Z datasheet, pinout, applications, or equivalent options, key selection factors include DC current gain range, saturation voltage under defined drive conditions, thermal resistance (R_θJA = 200 °C/W), and TO-92 mechanical compatibility for through-hole prototyping and legacy board replacement.

Technical Context

The 2N3417_D75Z operates as a silicon NPN bipolar junction transistor fabricated using Fairchild's Process 10. Its design supports both analog amplification (with h_fe = 180–540 at 1 kHz) and saturated switching (V_CE(sat) ≤ 0.3 V at I_C = 50 mA, I_B = 3.0 mA).

It features symmetrical breakdown ratings: V_(BR)CEO = V_(BR)CBO = 50 V, V_(BR)EBO = 5.0 V, and operates across –55°C to +150°C junction temperature range. Thermal performance is defined by R_θJC = 83.3 °C/W and R_θJA = 200 °C/W, confirming suitability for non-heatsinked, low-power PCB layouts.

Key Specifications

Pinout & Package

Package: TO-92, molded plastic case with straight leads, no lead clip, standard orientation per Fairchild Figure 1.0. Pin identification confirmed for D75Z ammo pack variant: flat side of transistor faces top, first wire off is collector.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Compared with 2N3417_D75Z, the 2N2222A offers broader legacy availability but reduced gain and higher saturation loss, while the BC547B delivers superior small-signal gain in compact form but cannot sustain 500 mA continuous current-making the 2N3417_D75Z optimal for medium-power switching where both current headroom and gain consistency are required.

Availability

2N3417_D75Z is available at Aetrix Electronics and suitable for industrial sensor interfaces, relay drivers, and DC motor control circuits requiring stable component supply and long-term obsolescence resilience.

Supply support for 2N3417_D75Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based designer and manufacturer of analog and discrete semiconductors, acquired by ON Semiconductor in 2016; its legacy product lines remain widely supported and qualified.

The 2N3417_D75Z belongs to Fairchild's general-purpose NPN transistor family designed for cost-sensitive, medium-current amplification and switching in industrial, automotive, and consumer electronics systems.

FAQ

What is the pin configuration of the 2N3417_D75Z?

The 2N3417_D75Z uses a TO-92 package with collector (C), base (B), and emitter (E) leads arranged in linear order. For the D75Z ammo pack variant, the flat side of the transistor faces upward, and the first wire off is the collector-matching Fairchild's Figure 3.0 orientation. This differs from D74Z (emitter-first) and must be verified during PCB layout.

What is the maximum continuous collector current for the 2N3417_D75Z?

The 2N3417_D75Z supports a maximum continuous collector current of 500 mA at T_A = 25°C. Derating is required above 25°C at 5.0 mW/°C, limiting usable current in high-ambient environments unless heatsinking or airflow is applied.

Does the 2N3417_D75Z have documented thermal resistance values?

Yes-the 2N3417_D75Z has documented thermal resistances: R_θJC = 83.3 °C/W (junction-to-case) and R_θJA = 200 °C/W (junction-to-ambient). These values assume standard PCB mounting with no copper pour or heatsink, and are critical for calculating junction temperature rise under load.

How does the h_FE range of the 2N3417_D75Z compare to the 2N3416?

The 2N3417_D75Z specifies h_FE = 180–540 at V_CE = 4.5 V and I_C = 2.0 mA, whereas the 2N3416 has h_FE = 75–225 under identical conditions. This higher gain range makes the 2N3417_D75Z preferable for low-base-drive applications like microcontroller-driven switches or high-impedance amplifier stages.

Is the 2N3417_D75Z suitable for switching 24 V relay coils?

Yes-the 2N3417_D75Z supports V_CEO = 50 V and delivers V_CE(sat) ≤ 0.3 V at I_C = 50 mA with I_B = 3.0 mA, making it well-suited for driving typical 24 V relay coils drawing <50 mA. Its 500 mA I_C rating provides ample margin for inrush and stall conditions.