onsemi 2N3702_D26Z

Overview

2N3702_D26Z from Fairchild Semiconductor is a PNP epitaxial silicon transistor designed for general-purpose amplification and switching in low-power analog and digital circuits, with V_CEO = −25 V, I_C = −500 mA continuous, h_FE = 60–300 at −50 mA/−5 V, and TO-92 package. It operates across −55°C to +150°C and supports applications such as signal inversion, level shifting, and discrete logic interface stages.

For engineers reviewing the 2N3702_D26Z datasheet, pinout, applications, or equivalent options, key selection considerations include its PNP polarity, −25 V V_CEO, −500 mA I_C, saturation voltages (V_CE(sat) = −0.25 V @ −50 mA/−5 mA), and TO-92 mechanical compatibility in space-constrained PCB layouts.

Technical Context

This PNP bipolar junction transistor uses epitaxial base construction for stable DC gain and moderate frequency response. Its f_T of 100 MHz and C_ob of 12 pF support audio-frequency amplification and fast-switching digital buffer roles, while thermal resistance R_θJA = 200°C/W defines its power derating behavior in still-air environments.

The device exhibits defined off-state leakage (I_CBO ≤ −100 nA @ −20 V) and tight V_BE(sat) range (−0.6 V to −1.0 V), enabling predictable turn-on thresholds in emitter-follower and current-source configurations without external bias compensation.

Key Specifications

Pinout & Package

Package: TO-92 - molded plastic case with 3 leads, standardized for through-hole mounting and manual prototyping. Lead spacing matches JEDEC TO-92 outline; body length ≈ 4.58 mm, width ≈ 3.60 mm, height ≈ 14.47 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Compared with MPSA92 and BC557, the 2N3702_D26Z offers balanced voltage/current capability (−25 V/−500 mA) and mid-range f_T (100 MHz), making it optimal for cost-sensitive, medium-speed switching and amplification where both robustness and bandwidth matter.

Availability

2N3702_D26Z is available at Aetrix Electronics and suitable for audio preamplifiers, discrete logic inverters, LED driver circuits, and current-source bias networks requiring stable component supply and long-term obsolescence resilience.

Supply support for 2N3702_D26Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete devices before its acquisition by ON Semiconductor in 2016.

The 2N3702_D26Z belongs to Fairchild's legacy general-purpose bipolar transistor family, engineered for reliability in analog signal conditioning and discrete logic implementation across consumer, industrial, and communication equipment.

FAQ

What is the maximum collector-emitter voltage rating for the 2N3702_D26Z?

The 2N3702_D26Z has a maximum collector-emitter voltage (V_CEO) rating of −25 V at T_A = 25°C. This rating applies in the common-emitter configuration with base open and defines the upper limit before avalanche breakdown occurs. Operation beyond this value risks permanent device degradation, especially under transient conditions or elevated temperatures.

Does the 2N3702_D26Z support switching applications, and what is its typical saturation voltage?

Yes, the 2N3702_D26Z is qualified for switching use with a typical V_CE(sat) of −0.25 V at I_C = −50 mA and I_B = −5.0 mA. This low saturation voltage minimizes power dissipation during on-state operation, making the 2N3702_D26Z effective in relay drivers, LED sinks, and digital logic interface circuits where efficiency and thermal management are critical.

What is the DC current gain (h_FE) range of the 2N3702_D26Z, and under what conditions is it specified?

The 2N3702_D26Z exhibits a DC current gain (h_FE) range of 60 to 300, measured at V_CE = −5.0 V and I_C = −50 mA. This specification reflects typical production variation and supports design margining for base resistor selection in both linear amplification and saturated switching configurations using the 2N3702_D26Z.

What package type does the 2N3702_D26Z use, and how are its leads arranged?

The 2N3702_D26Z uses the TO-92 plastic package with three leads arranged as follows: lead 1 = Emitter, lead 2 = Collector, lead 3 = Base - viewed from the flat side with leads pointing downward. This standardized pinout ensures mechanical and electrical compatibility with existing TO-92 footprints, sockets, and assembly tooling used for the 2N3702_D26Z.

What is the operating junction temperature range for the 2N3702_D26Z, and how does it affect thermal design?

The 2N3702_D26Z supports a junction temperature range of −55°C to +150°C. This wide range allows deployment in harsh environments, but thermal design must account for R_θJA = 200°C/W: at 625 mW dissipation, junction temperature rises 125°C above ambient, limiting usable power in still-air conditions. Derating to 5.0 mW/°C above 25°C is required per the 2N3702_D26Z datasheet.