onsemi 2N3702_D75Z

Overview

2N3702_D75Z from Fairchild Semiconductor is a PNP epitaxial silicon transistor designed for general-purpose amplification and switching in low-power analog and digital circuits, with V_CEO = −25 V, I_C = −500 mA continuous, h_FE = 60–300 at −50 mA/−5 V, and TO-92 package. It operates across −55°C to +150°C and supports applications such as signal inversion, level shifting, and discrete logic interface stages.

For engineers reviewing the 2N3702_D75Z datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, guaranteed −25 V V_CEO, confirmed TO-92 leaded package with E-C-B pin order, thermal resistance R_θJA = 200°C/W, and f_T = 100 MHz small-signal gain-bandwidth performance.

Technical Context

This device implements a planar PNP bipolar junction transistor structure using epitaxial base technology, optimized for linear amplification and saturated switching. Its DC current gain (h_FE) exhibits wide variation (60–300) under standard bias conditions, and saturation voltages are specified at −50 mA collector current with −5 mA base drive.

Thermal design relies on its R_θJA = 200°C/W and R_θJC = 83.3°C/W ratings, while high-frequency behavior is characterized by f_T = 100 MHz and C_ob = 12 pF at −10 V V_CB, supporting audio and low-MHz signal processing without external compensation.

Key Specifications

Pinout & Package

2N3702_D75Z is housed in a TO-92 plastic package with standardized 3-lead through-hole configuration. Lead identification follows Emitter–Collector–Base (ECB) order when viewing the flat side with leads downward.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Compared with 2N3702_D75Z, the 2N3906 offers superior voltage headroom and tighter h_FE control for precision biasing, while the MPSA92 trades gain consistency for extreme V_CEO robustness-making each alternative optimal only within distinct voltage-current-gain trade-off boundaries.

Availability

2N3702_D75Z is available at Aetrix Electronics and suitable for audio pre-amplification, discrete logic inversion, level shifting, and current mirror reference applications requiring stable component supply and long-term obsolescence management.

Supply support for 2N3702_D75Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based designer and manufacturer of analog and discrete semiconductors, acquired by ON Semiconductor in 2016; known for high-reliability bipolar transistors and power management ICs.

The 2N3702_D75Z belongs to Fairchild's legacy general-purpose PNP transistor family, engineered for cost-sensitive, medium-frequency analog and switching functions in consumer, industrial, and instrumentation equipment.

FAQ

What is the maximum collector-emitter voltage rating for the 2N3702_D75Z?

The 2N3702_D75Z has a maximum collector-emitter voltage (V_CEO) rating of −25 V at T_A = 25°C. This rating assumes an open-base condition and is based on a maximum junction temperature of 150°C. Operation beyond this voltage risks irreversible breakdown and permanent device failure, especially under elevated ambient temperatures or pulsed conditions not covered by the datasheet's steady-state limits.

Does the 2N3702_D75Z have a documented h_FE range, and how does it vary with operating conditions?

Yes, the 2N3702_D75Z specifies a DC current gain (h_FE) range of 60 to 300 at V_CE = −5.0 V and I_C = −50 mA. Gain decreases at lower collector currents and higher temperatures; typical values fall near 100 at I_C = −10 mA and degrade approximately 0.5%/°C above 25°C. The 2N3702_D75Z datasheet does not guarantee minimum h_FE below −10 mA, so bias networks should accommodate this spread.

What is the pin configuration of the 2N3702_D75Z in its TO-92 package?

The 2N3702_D75Z uses a standard TO-92 package with three leads arranged in Emitter–Collector–Base (ECB) order when viewed from the flat side with leads pointing downward. Pin 1 is Emitter, Pin 2 is Collector, and Pin 3 is Base. This configuration is explicitly confirmed in the Fairchild Rev. B datasheet and matches industry-standard PNP TO-92 orientation for PCB layout compatibility.

Can the 2N3702_D75Z be used in switching applications, and what are its saturation characteristics?

Yes, the 2N3702_D75Z is qualified for switching use with V_CE(sat) = −0.25 V max at I_C = −50 mA and I_B = −5.0 mA, and V_BE(sat) = −0.6 to −1.0 V under the same conditions. These values confirm reliable saturation with adequate base overdrive, enabling low-loss on-state operation in low-power digital interfaces and relay drivers. The 2N3702_D75Z achieves t_on/t_off < 100 ns in typical test circuits.

What thermal parameters define the safe operating area of the 2N3702_D75Z?

The 2N3702_D75Z has R_θJA = 200°C/W (junction-to-ambient) and R_θJC = 83.3°C/W (junction-to-case), with a maximum junction temperature of 150°C. At 25°C ambient, its 625 mW total dissipation derates by 5 mW/°C above that point. Safe continuous operation requires limiting power dissipation to ≤300 mW at 75°C ambient, verified via thermal simulation or board-level IR imaging. The 2N3702_D75Z datasheet explicitly prohibits pulsed operation beyond stated duty cycle limits without factory consultation.