onsemi 2N3772G

Overview

2N3772G from onsemi is a high-power NPN silicon power transistor designed for linear amplifiers, series pass regulators, and inductive switching applications. It features V_CEO = 60 Vdc, I_C = 30 Adc continuous, P_D = 150 W at T_C = 25°C, and TO-204AA (TO-3) metal package with collector-connected case. It supports robust forward-biased second breakdown at I_S/b = 2.5 Adc @ V_CE = 60 Vdc.

For engineers reviewing the 2N3772G datasheet, pinout, applications, or equivalent options, this page delivers verified electrical ratings, thermal behavior, safe operating area limits, junction-to-case thermal resistance (1.17°C/W), and Pb-free RoHS-compliant packaging - all critical for high-reliability power stage design and thermal management validation.

Technical Context

The 2N3772G operates as a discrete high-current NPN bipolar junction transistor optimized for linear and switching power applications where thermal stability and second-breakdown immunity are essential. Its rated V_CEX = 80 Vdc and V_CB = 100 Vdc support operation in high-voltage regulator and inductive load drive circuits.

It exhibits h_FE ≥ 5.0 at I_C = 8.0 Adc / V_CE = 4.0 Vdc and V_CE(sat) ≤ 1.4 Vdc at I_C = 30 Adc / I_B = 6.0 Adc, enabling efficient base-driven conduction in series-pass and Class-A amplifier topologies. Junction temperature range spans –65°C to +200°C, supporting extended industrial and automotive under-hood environments.

Key Specifications

Pinout & Package

2N3772G uses the TO-204AA (TO-3) metal can package with collector internally connected to the case. The device follows Style 1 pinout: Pin 1 = Base, Pin 2 = Emitter, Case = Collector.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power NPN transistor applications.

Compared with MJ15003G and 2N3055G, the 2N3772G uniquely balances 60 Vdc blocking, 30 Adc continuous current, and 150 W dissipation - making it the preferred choice for high-current linear regulation and audio output stages where both voltage headroom and thermal capacity are simultaneously constrained.

Availability

2N3772G is available at Aetrix Electronics and suitable for linear audio amplifiers, series pass voltage regulators, inductive load switching, and DC motor drive stages requiring stable component supply, long-term manufacturability, and traceable Pb-free sourcing.

Supply support for 2N3772G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in power management, analog, sensor, and logic solutions for automotive, industrial, and cloud infrastructure markets.

The 2N3772G belongs to onsemi's legacy high-power bipolar transistor product line, engineered specifically for ruggedized linear and switching power applications demanding high current, high voltage, and proven thermal reliability.

FAQ

What is the maximum continuous collector current rating for the 2N3772G?

The 2N3772G has a maximum continuous collector current rating of 30 Adc at case temperature T_C = 25°C. This rating decreases linearly above 25°C per the derating curve (0.855 W/°C), and actual usable current depends on heatsink performance and ambient conditions. The 2N3772G must be mounted to a thermally adequate heatsink to sustain this current without exceeding T_J = 200°C.

Does the 2N3772G have a built-in diode or integrated protection circuitry?

No, the 2N3772G is a discrete NPN bipolar junction transistor with no integrated diodes or protection circuitry. It requires external flyback diodes for inductive switching, base current limiting resistors, and thermal monitoring in linear applications. All protection functions must be implemented externally per the application circuit requirements.

What is the collector-to-emitter saturation voltage (V_CE(sat)) specification for the 2N3772G?

The 2N3772G specifies V_CE(sat) ≤ 1.4 Vdc at I_C = 30 Adc and I_B = 6.0 Adc, measured at T_C = 25°C. This low saturation voltage ensures minimal conduction loss in high-current linear and switching applications, directly impacting thermal design and efficiency. The 2N3772G achieves this with sufficient base drive and proper thermal management.

Is the 2N3772G pin-compatible with the 2N3771G?

Yes, the 2N3772G and 2N3771G share identical TO-204AA (TO-3) mechanical packaging and Style 1 pinout (Pin 1 = Base, Pin 2 = Emitter, Case = Collector). However, they differ electrically: 2N3772G has V_CEO = 60 Vdc vs. 40 Vdc for 2N3771G, and different second-breakdown ratings. Substitution requires verification of voltage stress margins in the target circuit.

What thermal resistance value applies to the 2N3772G, and how is it used in heatsink design?

The 2N3772G has a junction-to-case thermal resistance R_θJC = 1.17°C/W. This value is used to calculate the maximum allowable case-to-ambient thermal resistance (R_θCA) based on desired maximum junction temperature (e.g., 150°C) and actual power dissipation. For example, at 100 W dissipation and T_J = 150°C, R_θCA must be ≤ (150 − 25)/100 − 1.17 = 1.08°C/W - dictating heatsink size and airflow requirements for the 2N3772G.