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onsemi 2N3904_D10Z
- Part No.:
- 2N3904_D10Z
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Datasheet:
-
2N3904_D10Z.pdf
- Description:
- TRANS NPN 40V 0.2A TO-92-3
- Quantity:
- Payment:
- Shipping:
Inventory:8,412
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Product details
Overview
2N3904_D10Z from ON Semiconductor is a silicon NPN general-purpose bipolar junction transistor (BJT) designed for low-power amplification and switching applications, with VCEO = 40 V, IC = 200 mA continuous, fT = 300 MHz, and TO-92 package. It operates across –55 °C to +150 °C and is widely used in signal conditioning stages of sensor interfaces and discrete logic-level translators.
For engineers reviewing the 2N3904_D10Z datasheet, pinout, applications, or equivalent options, key selection criteria include DC current gain (hFE) at multiple collector currents, VCE(sat) under defined drive conditions, thermal resistance (RθJA = 200 °C/W), and EBC pin configuration compatibility with legacy through-hole layouts.
Technical Context
The 2N3904_D10Z implements a planar epitaxial NPN structure optimized for high-speed switching (td = 35 ns, ts = 200 ns) and broadband small-signal amplification up to 100 MHz. Its base-emitter junction supports VBE(sat) ≤ 0.85 V at IC = 10 mA / IB = 1 mA, enabling efficient drive from 3.3 V and 5 V logic families.
Thermal design relies on its TO-92 package's RθJA = 200 °C/W and PD = 625 mW at TA = 25 °C, with linear derating of 5.0 mW/°C above ambient. The device meets JEDEC TO-92 3L mechanical standards and exhibits Cobo = 4.0 pF and Cibo = 8.0 pF at specified bias conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 40 V - Maximum safe collector-emitter voltage before breakdown; defines rail headroom in switch and amplifier stages. |
| IC (max) | 200 mA - Continuous collector current limit; sets maximum load drive capability in saturated switching. |
| fT | 300 MHz - Unity-gain frequency; confirms suitability for RF preamps and fast digital edge shaping up to ~100 MHz. |
| hFE @ 10 mA | 100–300 - DC current gain range at IC = 10 mA, VCE = 1.0 V; determines base drive resistor sizing in linear and switch modes. |
| VCE(sat) | 0.2–0.3 V - Saturation voltage at IC = 10–50 mA; directly impacts conduction loss and power dissipation in switching applications. |
| RθJA | 200 °C/W - Junction-to-ambient thermal resistance; used to calculate max operating ambient temperature at given power dissipation. |
| NF @ 100 μA | 5.0 dB - Noise figure at IC = 100 μA, VCE = 5 V, RS = 1 kΩ; specifies low-noise performance in audio and sensor front-end amplifiers. |
Pinout & Package
2N3904_D10Z is housed in a standard TO-92 3-lead through-hole plastic package per JEDEC TO-92 variant, with lead spacing of 0.5 inch (12.7 mm) and body dimensions 4.6 × 3.3 × 4.0 mm. Pin identification follows EBC (Emitter–Base–Collector) sequence when viewing flat side with leads down and left-to-right orientation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E (Emitter) | Current sink terminal | Reference node for biasing; connects to ground or low-impedance return path in common-emitter configurations. |
| B (Base) | Control input | Receives forward-biased current to modulate collector current; requires series resistor to limit IB and prevent saturation overshoot. |
| C (Collector) | Current source terminal | Drives load toward supply rail; must be decoupled and heat-sinked if dissipating >100 mW continuously. |
Key Features
| Feature | Design Value |
|---|---|
| High-speed switching | Delay time td = 35 ns and storage time ts = 200 ns enable clean 100 kHz–1 MHz digital signal inversion without excessive shoot-through. |
| Wide gain bandwidth | fT = 300 MHz supports stable small-signal amplification up to 100 MHz, validated for RF detector and IF amplifier use. |
| Low noise operation | NF = 5.0 dB at 100 μA allows use in microphone preamps and precision analog sensor signal chains without added noise penalty. |
| Robust thermal rating | Junction temperature range –55 °C to +150 °C supports deployment in automotive engine control modules and industrial PLC I/O stages. |
| Standardized pinout | EBC pin order matches legacy 2N3904 variants and enables drop-in replacement in existing TO-92 PCB footprints without layout revision. |
Applications
| Audio Signal Amplifier | Microcontroller GPIO Driver |
|---|---|
|
Use Scenario: Amplifying weak line-level audio signals from electret microphones or piezoelectric sensors before ADC sampling. IC Role / Device Role / Timing Role: Discrete NPN common-emitter amplifier stage providing 20–40 dB voltage gain with minimal distortion. Use Value: Low VCE(sat) and hFE ≥ 100 at IC = 1 mA ensure high signal fidelity and low quiescent current draw in battery-powered recorders. |
Use Scenario: Driving LEDs, relays, or MOSFET gates from 3.3 V or 5 V microcontroller output pins with limited current sourcing capability. IC Role / Device Role / Timing Role: Saturated switch translating logic-high to collector rail voltage while isolating MCU I/O from load transients. Use Value: VCE(sat) ≤ 0.3 V at IC = 50 mA minimizes power loss and self-heating, supporting reliable 100% duty-cycle operation. |
| Temperature Sensor Interface | Discrete Logic Level Shifter |
|
Use Scenario: Converting PT100 or thermistor resistance changes into proportional voltage outputs via constant-current bias. IC Role / Device Role / Timing Role: Current-source element in emitter-follower or active-load configuration for ratiometric analog sensing. Use Value: Tight hFE tolerance and low ICBO (< 50 nA) maintain measurement stability over –40 °C to +85 °C industrial temperature ranges. |
Use Scenario: Bidirectional level translation between 3.3 V FPGA I/O banks and 5 V peripheral buses where integrated translators are unavailable. IC Role / Device Role / Timing Role: Active pull-up/pull-down switch enabling open-drain or push-pull signaling across voltage domains. Use Value: Fast tr/tf ≤ 35 ns ensures sub-microsecond edge transitions compatible with 1–10 MHz SPI/I²C clock rates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT3904 | SOT-23 surface-mount package; RθJA = 357 °C/W; PD = 350 mW; same electrical specs. | Requires PCB rework for SMT assembly; unsuitable for through-hole prototyping or high-reliability vibration environments. | Select MMBT3904 only when board space constraints mandate SMT or automated pick-and-place manufacturing. |
| PZT3904 | SOT-223 package with 4-pin footprint; RθJA = 125 °C/W; PD = 1000 mW; identical electrical characteristics. | Supports higher continuous power dissipation; requires larger land pattern and different thermal pad layout. | Choose PZT3904 for high-duty-cycle switching loads exceeding 300 mW where TO-92 thermal limits are exceeded. |
Compared with MMBT3904 and PZT3904, the 2N3904_D10Z offers optimal balance of legacy compatibility, thermal margin for moderate-power tasks, and ease of hand-soldering-making it preferred for evaluation, repair, and low-volume industrial control designs.
Availability
2N3904_D10Z is available at Aetrix Electronics and suitable for audio signal conditioning, microcontroller interface circuits, and discrete logic level translation requiring stable component supply and long-term obsolescence management.
Supply support for 2N3904_D10Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, and sensor solutions for automotive, industrial, and cloud infrastructure markets.
The 2N3904_D10Z belongs to ON Semiconductor's legacy general-purpose BJT product line, engineered for broad compatibility, reliability in harsh environments, and seamless integration into cost-sensitive analog and mixed-signal systems.
FAQ
What is the maximum collector current rating for the 2N3904_D10Z?
The 2N3904_D10Z has a continuous collector current rating of 200 mA at TA = 25 °C. This value decreases linearly with ambient temperature at 5.0 mW/°C due to its 625 mW total power dissipation limit and 200 °C/W thermal resistance. For pulsed operation, consult ON Semiconductor's application notes on transient thermal behavior before exceeding 200 mA peak.
Does the 2N3904_D10Z support high-frequency amplification?
Yes, the 2N3904_D10Z delivers a current gain–bandwidth product (fT) of 300 MHz under standard test conditions (IC = 10 mA, VCE = 20 V). It maintains usable gain up to 100 MHz in common-emitter configurations, making it suitable for RF detector stages, IF amplifiers, and fast pulse conditioning-provided proper impedance matching and layout practices are followed.
What is the pin configuration of the 2N3904_D10Z?
The 2N3904_D10Z uses the standard TO-92 package with EBC (Emitter–Base–Collector) pinout: when viewing the flat side with leads pointing downward, the leftmost pin is Emitter, center is Base, and rightmost is Collector. This matches JEDEC TO-92 3L mechanical specifications and ensures compatibility with legacy 2N3904 footprints and socket adapters.
How does the 2N3904_D10Z compare to the MMBT3904 in terms of thermal performance?
The 2N3904_D10Z has RθJA = 200 °C/W in its TO-92 package, significantly lower than the MMBT3904's RθJA = 357 °C/W in SOT-23. As a result, the 2N3904_D10Z can dissipate more power at the same ambient temperature-625 mW vs. 350 mW-and remains cooler under identical bias conditions, improving long-term reliability in enclosed or high-temperature enclosures.
Can the 2N3904_D10Z be used in low-noise audio preamplifier stages?
Yes, the 2N3904_D10Z achieves a noise figure of 5.0 dB at IC = 100 μA, VCE = 5.0 V, and RS = 1.0 kΩ, making it suitable for low-noise audio preamplifier stages in electret microphone interfaces and sensor signal conditioning. Its low ICBO (< 50 nA) and stable hFE further support consistent gain and minimal drift across temperature variations.
2N3904_D10Z Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 200 mA
- Voltage - Collector Emitter Breakdown (Max):
- 40 V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 10mA, 1V
- Power - Max:
- 625 mW
- Frequency - Transition:
- 300MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92-3
2N3904_D10Z FAQ
1.How can I place an order for 2N3904_D10Z through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N3904_D10Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N3904_D10Z reliable?
The price and inventory of 2N3904_D10Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N3904_D10Z is usually 5 days.
3.What payment methods are accepted for 2N3904_D10Z?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N3904_D10Z transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N3904_D10Z?
2N3904_D10Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N3904_D10Z order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N3904_D10Z?
For technical support, including 2N3904_D10Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N3904_D10Z requirements.
6.How does Aetrix verify that 2N3904_D10Z is sourced from the original manufacturer or authorized distributors?
All 2N3904_D10Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N3904_D10Z meets industry standards.
7.What is the process for return or replacement of 2N3904_D10Z?
All 2N3904_D10Z units undergo pre-shipment inspection (PSI). If there is an issue with 2N3904_D10Z, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N3904_D10Z part is unused and in its original packaging.
Return procedure for 2N3904_D10Z:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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