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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N3904_D27ZS00Z

Name: 2N3904_D27ZS00Z
Brand: onsemi
SKU: 2N3904_D27ZS00Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N3904_D27ZS00Z

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Datasheet:: 2N3904_D27ZS00Z.pdf

Description:: TRANS NPN 40V 0.2A TO-92-3

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Product details

Overview

2N3904_D27ZS00Z from ON Semiconductor is an NPN general-purpose bipolar junction transistor (BJT) designed for amplification and switching in low-power analog and digital circuits. It delivers DC current gain (h_FE) of 70–300 at I_C = 1.0 mA, V_CE = 1.0 V; supports 100 MHz current-gain bandwidth (f_T); withstands 40 V collector-emitter breakdown voltage (V_CEO); and operates across –55°C to +150°C. It is widely used in signal conditioning stages of sensor interfaces and discrete logic level shifting.

For engineers reviewing the 2N3904_D27ZS00Z datasheet, pinout, applications, or equivalent options, key selection criteria include verified h_FE range at target bias points, V_CE(sat) under specified I_C/I_B, thermal resistance (R_θJA = 200°C/W), and TO-92 package compatibility with through-hole prototyping and legacy PCB layouts.

Technical Context

This device implements a planar epitaxial NPN structure optimized for stable DC current amplification and fast switching response. Its f_T = 300 MHz enables use in RF preamplifier stages up to VHF band, while its low C_obo = 4.0 pF and C_ibo = 8.0 pF support high-impedance input/output matching. The base-emitter saturation voltage (V_BE(sat)) remains ≤0.85 V at I_C = 10 mA / I_B = 1.0 mA, ensuring predictable turn-on behavior in saturated switch configurations.

Absolutely rated for V_CEO = 40 V, V_CB0 = 60 V, and V_EB0 = 6.0 V, it sustains continuous collector current up to 200 mA and total power dissipation of 625 mW at T_A = 25°C - derating linearly by 5.0 mW/°C above ambient. Junction temperature is limited to 150°C, supporting operation in industrial control enclosures without forced cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	40 V - Maximum safe collector-emitter voltage before avalanche breakdown; defines upper rail limit in amplifier or switch stage.
h_FE	70–300 - DC current gain range at I_C = 1.0 mA, V_CE = 1.0 V; determines required base drive for target collector load.
f_T	300 MHz - Unity-gain frequency; sets usable small-signal amplification bandwidth ceiling in common-emitter configuration.
V_CE(sat)	0.2–0.3 V - Collector-emitter voltage drop in saturation; directly impacts conduction loss and heat generation in switching applications.
R_θJA	200 °C/W - Junction-to-ambient thermal resistance in TO-92 package on standard FR-4 board; governs maximum allowable power at given ambient temperature.
t_s	200 ns - Storage time during turn-off; critical for minimum pulse width and maximum switching frequency in digital logic or PWM drivers.
NF	5.0 dB - Noise figure at I_C = 100 μA, V_CE = 5.0 V, R_S = 1.0 kΩ, 10 Hz–15.7 kHz; indicates suitability for low-noise audio preamp front-ends.

Pinout & Package

The 2N3904_D27ZS00Z is housed in a TO-92 3-lead through-hole plastic package with EBC (Emitter-Base-Collector) pin sequence when viewed from the flat side with leads downward.

Pin/Terminal	Circuit Role	Design Meaning
E (Emitter)	Current sink terminal	Reference node for biasing; connects to ground or low-impedance return path in common-emitter amplifier or low-side switch.
B (Base)	Control input	Receives forward-biased current to modulate collector current; requires series resistor to limit I_B and prevent thermal runaway.
C (Collector)	Current source terminal	Delivers amplified or switched output current; connects to load and supply rail in active or saturated mode.

Key Features

Feature	Design Value
High f_T bandwidth	300 MHz - Enables stable small-signal amplification up to VHF frequencies without external compensation.
Low noise figure	5.0 dB - Supports clean signal amplification in microphone preamps and sensor signal chains where SNR is critical.
Wide operating temperature	–55°C to +150°C - Allows deployment in automotive engine compartments, industrial PLC modules, and outdoor instrumentation.
Proven reliability in TO-92	625 mW P_D @ 25°C - Delivers robust thermal performance in legacy through-hole designs without heatsinking.
Fast switching times	t_d/t_r = 35 ns, t_f = 50 ns - Supports digital clock distribution and PWM dimming at >1 MHz with minimal propagation delay.

Applications

Audio Preamp Stage	Sensor Signal Conditioning
Use Scenario: Amplifying weak signals from electret microphones or piezoelectric transducers before ADC sampling. IC Role / Device Role / Timing Role: Discrete NPN amplifier in common-emitter configuration with emitter degeneration for linearity and gain stability. Use Value: 5.0 dB noise figure and 300 MHz f_T preserve signal integrity while enabling compact, low-cost front-end design without op-amps.	Use Scenario: Converting low-level analog outputs from thermistors, photodiodes, or strain gauges into robust voltage levels. IC Role / Device Role / Timing Role: Transimpedance or voltage-follower buffer stage providing isolation and gain before filtering or digitization. Use Value: Stable h_FE over –55°C to +150°C ensures consistent calibration across environmental extremes in field-deployed sensors.
Discrete Logic Level Shifter	Low-Side Switch Driver
Use Scenario: Interfacing 3.3 V microcontroller GPIOs to 5 V or 12 V logic families or peripheral inputs. IC Role / Device Role / Timing Role: Saturated NPN switch configured as open-collector inverter with pull-up resistor on collector. Use Value: V_CE(sat) ≤ 0.3 V at I_C = 50 mA ensures minimal voltage drop and reliable logic '0' assertion across supply rails.	Use Scenario: Driving LEDs, relays, or small solenoids from MCU outputs in embedded control systems. IC Role / Device Role / Timing Role: Low-side switch with base resistor limiting I_B to achieve h_FE-based I_C control and avoid saturation overshoot. Use Value: 200 mA I_C rating and 200 ns storage time enable reliable 10 kHz PWM dimming or relay cycling without thermal stress.

Audio Preamp Stage

Sensor Signal Conditioning

Use Scenario: Amplifying weak signals from electret microphones or piezoelectric transducers before ADC sampling.

IC Role / Device Role / Timing Role: Discrete NPN amplifier in common-emitter configuration with emitter degeneration for linearity and gain stability.

Use Value: 5.0 dB noise figure and 300 MHz f_T preserve signal integrity while enabling compact, low-cost front-end design without op-amps.

Use Scenario: Converting low-level analog outputs from thermistors, photodiodes, or strain gauges into robust voltage levels.

IC Role / Device Role / Timing Role: Transimpedance or voltage-follower buffer stage providing isolation and gain before filtering or digitization.

Use Value: Stable h_FE over –55°C to +150°C ensures consistent calibration across environmental extremes in field-deployed sensors.

Discrete Logic Level Shifter

Low-Side Switch Driver

Use Scenario: Interfacing 3.3 V microcontroller GPIOs to 5 V or 12 V logic families or peripheral inputs.

IC Role / Device Role / Timing Role: Saturated NPN switch configured as open-collector inverter with pull-up resistor on collector.

Use Value: V_CE(sat) ≤ 0.3 V at I_C = 50 mA ensures minimal voltage drop and reliable logic '0' assertion across supply rails.

Use Scenario: Driving LEDs, relays, or small solenoids from MCU outputs in embedded control systems.

IC Role / Device Role / Timing Role: Low-side switch with base resistor limiting I_B to achieve h_FE-based I_C control and avoid saturation overshoot.

Use Value: 200 mA I_C rating and 200 ns storage time enable reliable 10 kHz PWM dimming or relay cycling without thermal stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT3904	SOT-23 surface-mount package; R_θJA = 357°C/W; same electrical specs but lower power dissipation (350 mW).	Used where board space is constrained and reflow assembly is preferred; unsuitable for >150 mW continuous loads.	Select MMBT3904 for automated SMT production and compact PCBs; verify thermal margin with layout-specific R_θJA.
PZT3904	SOT-223 package; R_θJA = 125°C/W; higher P_D = 1000 mW; identical electrical characteristics.	Preferred for higher-power switching or linear regulation where TO-92 thermal limits are exceeded.	Choose PZT3904 when sustained I_C > 150 mA or ambient > 70°C; requires larger footprint and different land pattern.

Compared with MMBT3904 and PZT3904, the 2N3904_D27ZS00Z offers optimal balance of legacy compatibility, thermal headroom (625 mW), and ease of hand-soldering - making it ideal for prototyping, repair, and cost-sensitive through-hole production where moderate power and proven reliability are prioritized.

Availability

2N3904_D27ZS00Z is available at Aetrix Electronics and suitable for audio preamplifiers, sensor interface modules, and discrete logic level translation requiring stable component supply and long-term obsolescence management.

Supply support for 2N3904_D27ZS00Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N3904_D27ZS00Z belongs to ON Semiconductor's legacy general-purpose transistor product line, originally developed by Fairchild and maintained for broad compatibility in analog signal chain, discrete logic, and low-power switching applications.

FAQ

What is the pin configuration of the 2N3904_D27ZS00Z?

The 2N3904_D27ZS00Z uses a TO-92 package with Emitter-Base-Collector (EBC) pinout when viewed from the flat side with leads pointing downward. Pin 1 is Emitter, Pin 2 is Base, and Pin 3 is Collector. This configuration is standardized per JEDEC TO-92 and matches all 2N3904 variants from ON Semiconductor and legacy Fairchild documentation.

Does the 2N3904_D27ZS00Z support switching applications up to 1 MHz?

Yes, the 2N3904_D27ZS00Z supports switching at up to ~1 MHz in optimized circuits. Its 35 ns delay time (t_d), 35 ns rise time (t_r), and 50 ns fall time (t_f) allow clean transitions, though storage time (t_s = 200 ns) limits maximum duty-cycle-adjusted frequency. For reliable 1 MHz square-wave switching, ensure base drive is sufficient to minimize t_s and maintain saturation.

What is the maximum continuous collector current for the 2N3904_D27ZS00Z?

The absolute maximum continuous collector current for the 2N3904_D27ZS00Z is 200 mA at T_A = 25°C. However, practical operation should respect thermal limits: with R_θJA = 200°C/W, sustained 200 mA at 25°C ambient consumes ~625 mW (P_D max), so actual I_C must be reduced as ambient temperature rises or board copper area decreases.

Can the 2N3904_D27ZS00Z replace the MMBT3904 in a PCB design?

No direct replacement is possible without layout modification: the 2N3904_D27ZS00Z uses TO-92 through-hole packaging, while the MMBT3904 uses SOT-23 surface-mount packaging. Pin functions match (E-B-C), but mechanical fit, soldering process, and thermal performance differ significantly. Use 2N3904_D27ZS00Z only in TO-92-compatible footprints.

What is the typical noise figure of the 2N3904_D27ZS00Z and where is it specified?

The typical noise figure of the 2N3904_D27ZS00Z is 5.0 dB, measured at I_C = 100 μA, V_CE = 5.0 V, R_S = 1.0 kΩ, and frequency range 10 Hz to 15.7 kHz. This value is documented in the "Electrical Characteristics" table of the official ON Semiconductor datasheet (Rev. 1.1.0, October 2014) under SMALL SIGNAL CHARACTERISTICS.

2N3904_D27ZS00Z Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 200 mA

Voltage - Collector Emitter Breakdown (Max):: 40 V

Vce Saturation (Max) @ Ib, Ic:: 300mV @ 5mA, 50mA

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 10mA, 1V

Power - Max:: 625 mW

Frequency - Transition:: 300MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92-3

2N3904_D27ZS00Z FAQ

1.How can I place an order for 2N3904_D27ZS00Z through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N3904_D27ZS00Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N3904_D27ZS00Z reliable?

The price and inventory of 2N3904_D27ZS00Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N3904_D27ZS00Z is usually 5 days.

3.What payment methods are accepted for 2N3904_D27ZS00Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N3904_D27ZS00Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N3904_D27ZS00Z?

2N3904_D27ZS00Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N3904_D27ZS00Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N3904_D27ZS00Z?

For technical support, including 2N3904_D27ZS00Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N3904_D27ZS00Z requirements.

6.How does Aetrix verify that 2N3904_D27ZS00Z is sourced from the original manufacturer or authorized distributors?

All 2N3904_D27ZS00Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N3904_D27ZS00Z meets industry standards.

7.What is the process for return or replacement of 2N3904_D27ZS00Z?

All 2N3904_D27ZS00Z units undergo pre-shipment inspection (PSI). If there is an issue with 2N3904_D27ZS00Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N3904_D27ZS00Z part is unused and in its original packaging.

Return procedure for 2N3904_D27ZS00Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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