onsemi 2N3904RLRA

Overview

2N3904RLRA from onsemi is an NPN silicon general-purpose transistor in TO-92 package, rated for 40 V_CEO, 200 mA continuous collector current, and 625 mW dissipation at 25°C ambient. It delivers DC current gain (h_FE) of 100–300 at I_C = 10 mA, V_CE = 1.0 V, and exhibits f_T = 300 MHz for small-signal amplification. It is widely used in low-power switching and linear amplifier stages in consumer electronics and industrial control circuits.

For engineers reviewing the 2N3904RLRA datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CEO/I_C ratings, h_FE consistency across operating points, saturation voltage performance at I_C/I_B = 10, thermal resistance (R_JA = 200°C/W), and Pb-free tape-and-reel packaging compliance.

Technical Context

This discrete NPN bipolar junction transistor operates in active, saturation, and cutoff regions with defined breakdown limits: V_(BR)CEO = 40 V (I_C = 1 mA), V_(BR)CBO = 60 V (I_C = 10 A), and V_(BR)EBO = 6.0 V (I_E = 10 A). Its small-signal parameters include h_fe = 200–400 at I_C = 1 mA, V_CE = 10 V, f = 1 kHz, and output admittance h_oe ≤ 40 μmhos under same conditions.

Switching behavior is characterized by t_d ≤ 35 ns, t_r ≤ 35 ns, t_s ≤ 200 ns, and t_f ≤ 50 ns at V_CC = 3.0 V, I_C = 10 mA, and I_B1 = I_B2 = 1.0 mA. Noise figure is 5.0 dB at I_C = 100 μA, V_CE = 5.0 V, R_S = 1.0 kΩ, f = 1.0 kHz - confirming suitability for low-noise preamplifier use.

Key Specifications

Pinout & Package

2N3904RLRA uses the TO-92 (Case 29-11) plastic package with straight leads and Pb-free finish, supplied in tape-and-reel format (2000 units per reel). Dimensions comply with ANSI Y14.5M and ASME Y14.5M standards; body height 4.45–5.20 mm, lead pitch 2.54 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Compared with BC547B and MPS2222A, the 2N3904RLRA offers tighter h_FE consistency at mid-range currents (1–50 mA), lower noise figure, and factory-certified Pb-free tape-and-reel packaging - making it optimal for high-volume, RoHS-compliant consumer and industrial designs where precision gain and low-noise performance are prioritized over extreme current handling.

Availability

2N3904RLRA is available at Aetrix Electronics and suitable for low-power switching, analog amplification, and digital interface applications requiring stable component supply, consistent parametric binning, and full traceability through manufacturing lot codes.

Supply support for 2N3904RLRA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N3904RLRA belongs to onsemi's legacy general-purpose transistor product line, designed for cost-sensitive, high-reliability discrete amplification and switching in mass-produced electronics - emphasizing parametric consistency, wide temperature operation, and regulatory compliance.

FAQ

What is the maximum continuous collector current rating for the 2N3904RLRA?

The 2N3904RLRA has a maximum continuous collector current (I_C) rating of 200 mA at ambient temperature (T_A) = 25°C. This rating decreases linearly above 25°C at 5.0 mW/°C due to thermal derating. At case temperature (T_C) = 25°C, the device supports up to 1.5 W dissipation, but practical PCB layout limits typically govern real-world current capability. Always verify thermal design margins using R_JA = 200°C/W.

Is the 2N3904RLRA RoHS-compliant and what packaging format does it use?

Yes, the 2N3904RLRA is RoHS-compliant and features a matte tin Pb-free finish per JEDEC J-STD-609A. It is supplied in tape-and-reel packaging with 2000 units per reel, compatible with automated SMT placement equipment. The "RLRA" suffix explicitly denotes this Pb-free tape-and-reel configuration, distinguishing it from bulk (RLRM) or ammo-pack (ZL1) variants.

What is the typical DC current gain (h_FE) of the 2N3904RLRA at 10 mA collector current?

The 2N3904RLRA exhibits a guaranteed h_FE range of 100 to 300 at I_C = 10 mA, V_CE = 1.0 V, and T_A = 25°C. This specification is validated per onsemi's production test flow and reflects the minimum and maximum values observed across the qualified lot. Designers should use h_FE = 100 for worst-case saturation analysis and h_FE = 300 for linear-mode biasing margin.

Can the 2N3904RLRA be used in high-frequency amplifier circuits?

Yes, the 2N3904RLRA supports small-signal amplification up to 300 MHz (f_T), making it suitable for VHF-band RF preamplifiers, oscillator buffer stages, and broadband analog signal conditioning. Its C_ibo = 8.0 pF and C_obo = 4.0 pF at specified bias points minimize Miller effect, while h_fe ≥ 200 at 1 mA ensures stable gain in low-current configurations.

How does the 2N3904RLRA compare to the 2N3903 in terms of DC current gain?

The 2N3904RLRA provides higher DC current gain than the 2N3903 across all tested conditions: at I_C = 10 mA, V_CE = 1.0 V, the 2N3904RLRA specifies h_FE = 100–300 versus 50–100 for the 2N3903. This difference enables reduced base drive requirements and improved efficiency in switching applications, particularly where space or power budget constraints limit base resistor sizing.