onsemi 2N3905TA
- Part No.:
- 2N3905TA
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Datasheet:
-
2N3905TA.pdf
- Description:
- TRANS PNP 40V 0.2A TO-92-3
- Quantity:
- Payment:

- Shipping:

Inventory:7,006
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
2N3905TA from ON Semiconductor (formerly Fairchild) is a PNP general-purpose bipolar junction transistor used for low-power amplification and switching in discrete analog and digital circuits, with VCEO = 40 V, IC = 200 mA continuous, hFE = 30–150 at IC = 0.1–100 mA, and TO-92 package. It operates across –55°C to +150°C and supports applications such as signal inversion, LED drivers, and small-signal load switching.
For engineers reviewing the 2N3905TA datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP polarity, DC current gain range, saturation voltage performance at defined IB/IC conditions, thermal resistance (RθJA = 200°C/W), and compatibility with through-hole PCB layouts using TO-92 footprints.
Technical Context
The 2N3905TA functions as a medium-speed, low-voltage PNP BJT optimized for linear amplification and saturated switching. Its hfe = 50–200 at f = 1 kHz and IC = 1–10 mA enables stable small-signal gain in audio preamps and sensor interfaces, while td/tr/ts/tf ≤ 35/35/200/60 ns support reliable digital logic-level switching up to ~1 MHz.
It features V(BR)CEO = 40 V and V(BR)EBO = 5.0 V, defining safe operating limits for emitter-base reverse bias and collector-emitter breakdown. With Cob = 4.5 pF and Cib = 10 pF at specified test conditions, it maintains predictable high-frequency response in common-emitter configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 40 V - Maximum allowable collector-emitter voltage before breakdown; sets upper rail limit in amplifier or switch designs. |
| IC (continuous) | 200 mA - Continuous collector current rating; defines maximum steady-state load drive capability. |
| hFE | 30–150 - DC current gain range across IC = 0.1–100 mA; determines base drive requirements for saturation. |
| VCE(sat) | 0.25–0.40 V - Collector-emitter voltage in hard saturation; impacts power loss and output low-level voltage in switch applications. |
| RθJA | 200 °C/W - Junction-to-ambient thermal resistance; used to calculate temperature rise under given power dissipation in still air. |
| fT | Not specified - Unity-gain frequency not provided in datasheet; small-signal bandwidth inferred from hfe and capacitance data. |
| NF | 5.0 dB - Noise figure at IC = 100 µA, RS = 1 kΩ, 10 Hz–15.7 kHz; relevant for low-noise preamplifier stages. |
Pinout & Package
2N3905TA is housed in a TO-92 plastic package with standard three-terminal configuration: Emitter (pin 1), Base (pin 2), Collector (pin 3), viewed from flat side with leads down and text upright.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Emitter (E) | Current sink terminal for PNP operation | Connected to higher potential (e.g., VCC) in common-emitter switches; sets reference for base bias network. |
| Base (B) | Control input for minority-carrier injection | Receives current-limited drive to achieve desired IC; requires series resistor to prevent overdrive and thermal runaway. |
| Collector (C) | Output current source terminal | Delivers amplified/saturated current to load; typically connected to load and ground in common-emitter topology. |
Key Features
| Feature | Design Value |
|---|---|
| Wide operating temperature range | –55°C to +150°C junction temperature - Enables use in automotive under-hood, industrial control, and outdoor electronics without derating. |
| Low saturation voltage | VCE(sat) ≤ 0.40 V at IC = 50 mA, IB = 5 mA - Reduces conduction loss and improves efficiency in low-voltage switching applications. |
| Controlled DC current gain | hFE ≥ 30 at IC = 0.1 mA and ≥ 15 at IC = 100 mA - Supports predictable biasing across multiple operating points in amplifier and switch designs. |
| Low noise performance | NF = 5.0 dB at 100 µA, 1 kHz–15.7 kHz - Suitable for microphone preamplifiers and sensor signal conditioning where SNR matters. |
Applications
| Audio Signal Inversion | LED Driver Switch |
|---|---|
Use Scenario: Inverting stage in portable audio preamplifier chains requiring low-noise, single-supply operation. IC Role / Device Role / Timing Role: PNP BJT configured in common-emitter mode to provide voltage inversion and moderate gain. Use Value: Delivers 5.0 dB noise figure and hFE ≥ 50 at IC = 1 mA, enabling clean signal amplification without added active components. | Use Scenario: Driving indicator LEDs in microcontroller-based status panels with 3.3 V or 5 V logic levels. IC Role / Device Role / Timing Role: Saturated PNP switch sinking current from VCC through LED to MCU GPIO (active-low control). Use Value: Achieves VCE(sat) ≤ 0.25 V at IC = 10 mA, minimizing LED forward voltage drop impact and ensuring consistent brightness. |
| Level Translation Interface | Discrete Logic Inverter |
Use Scenario: Translating 1.8 V CMOS logic outputs to 5 V-compatible signals for legacy peripherals. IC Role / Device Role / Timing Role: PNP-based level shifter with pull-up resistor on collector and base driven by low-voltage logic. Use Value: Fast switching (tr/tf ≤ 35/60 ns) and low VBE(sat) (≤ 0.95 V) ensure accurate high-speed translation without timing skew. | Use Scenario: Building compact, low-cost inverters in educational kits or repairable analog-digital hybrid systems. IC Role / Device Role / Timing Role: Discrete PNP transistor implementing NOT gate function with resistor bias network. Use Value: Guaranteed hFE ≥ 30 and V(BR)EBO = 5.0 V allow robust operation with TTL/CMOS-compatible input thresholds and fan-out stability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP general-purpose amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MPSA56 | Same TO-92 package; VCEO = 50 V, hFE = 100–300, RθJA = 200°C/W - higher breakdown and wider gain range. | Preferred where higher voltage margin or tighter gain consistency is required, e.g., 24 V industrial sensors. | Select MPSA56 when VCEO > 40 V or hFE > 150 is needed; verify base resistor values due to higher hFE. |
| BC557 | TO-92; VCEO = 45 V, IC = 100 mA, hFE = 110–800 - higher gain spread but lower IC rating. | Better suited for low-current amplification (e.g., phototransistor interfaces), less ideal for 200 mA switching loads. | Choose BC557 for high-gain, low-noise amplification below 100 mA; avoid for sustained >100 mA loads due to lower IC rating. |
Compared with 2N3905TA, MPSA56 offers higher voltage tolerance and broader hFE, making it more robust in variable supply environments, while BC557 delivers superior small-signal gain at low currents but lacks the 200 mA continuous rating essential for power-switching roles.
Availability
2N3905TA is available at Aetrix Electronics and suitable for audio preamplifiers, LED driver circuits, discrete logic inverters, and level translation interfaces requiring stable component supply and long-term obsolescence management.
Supply support for 2N3905TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, communications, computing, and consumer electronics.
The 2N3905TA belongs to ON Semiconductor's legacy general-purpose bipolar transistor product line, designed for cost-sensitive, reliability-critical discrete circuit building blocks in analog signal conditioning and digital interface applications.
FAQ
What is the maximum continuous collector current rating for the 2N3905TA?
The 2N3905TA has a maximum continuous collector current (IC) rating of 200 mA at TA = 25°C. This value decreases with rising ambient temperature per the derating curve (5.0 mW/°C above 25°C), and actual usable current must account for VCE(sat) and thermal resistance to maintain junction temperature ≤ 150°C. The 2N3905TA datasheet specifies this limit under steady-state DC conditions.
Is the 2N3905TA pin-compatible with the 2N3904?
No, the 2N3905TA is not pin-compatible with the 2N3904 because they are complementary devices: 2N3905TA is PNP while 2N3904 is NPN. Although both use TO-92 packages with identical physical pinouts (Emitter–Base–Collector), their polarity reversal means direct substitution without circuit modification will cause functional failure. The 2N3905TA requires reversed biasing and load placement relative to the 2N3904.
What is the typical noise figure of the 2N3905TA and under what conditions is it measured?
The 2N3905TA has a typical noise figure (NF) of 5.0 dB, measured at VCE = 5.0 V, IC = 100 µA, source resistance RS = 1.0 kΩ, and frequency bandwidth from 10 Hz to 15.7 kHz. This specification confirms its suitability for low-noise small-signal amplification tasks, and the 2N3905TA maintains this performance across the specified test conditions without requiring external noise-reduction components.
Does the 2N3905TA support pulsed operation beyond its DC ratings?
Yes, the 2N3905TA supports pulsed operation beyond its DC ratings, but only within limits defined in the datasheet's "Absolute Maximum Ratings" notes: pulse width ≤ 300 µs and duty cycle ≤ 2.0%. For such conditions, peak IC may exceed 200 mA, but thermal and secondary breakdown constraints still apply. Engineers must consult ON Semiconductor's application guidance or perform transient thermal analysis before deploying the 2N3905TA in pulsed designs.
What is the base-emitter saturation voltage (VBE(sat)) for the 2N3905TA at common operating points?
The 2N3905TA exhibits VBE(sat) = 0.65 V at IC = 10 mA / IB = 1.0 mA and 0.85–0.95 V at IC = 50 mA / IB = 5.0 mA. These values define the minimum base drive voltage required to achieve full saturation and are critical for calculating base resistor values in switching applications. The 2N3905TA's VBE(sat) remains stable across its rated temperature range.
2N3905TA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Packaging:
- Tape & Box (TB)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 200 mA
- Voltage - Collector Emitter Breakdown (Max):
- 40 V
- Vce Saturation (Max) @ Ib, Ic:
- 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 50 @ 10mA, 1V
- Power - Max:
- 625 mW
- Frequency - Transition:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92-3
2N3905TA FAQ
1.How can I place an order for 2N3905TA through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N3905TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N3905TA reliable?
The price and inventory of 2N3905TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N3905TA is usually 5 days.
3.What payment methods are accepted for 2N3905TA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N3905TA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N3905TA?
2N3905TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N3905TA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N3905TA?
For technical support, including 2N3905TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N3905TA requirements.
6.How does Aetrix verify that 2N3905TA is sourced from the original manufacturer or authorized distributors?
All 2N3905TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N3905TA meets industry standards.
7.What is the process for return or replacement of 2N3905TA?
All 2N3905TA units undergo pre-shipment inspection (PSI). If there is an issue with 2N3905TA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N3905TA part is unused and in its original packaging.
Return procedure for 2N3905TA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2N3905TA Tags

-
MMBT3906LT1G
onsemi

-
MMBT3904-7-F
Diodes Incorporated

-
MMBT3904LT1G
onsemi

-
MMBT3906-7-F
Diodes Incorporated

-
MMBT3904-TP
Micro Commercial Co

-
MMBT2222A-7-F
Diodes Incorporated

-
BC846BLT1G
onsemi

-
BC847B,215
Nexperia USA Inc.

-
SMMBT3904LT1G
onsemi

-
MMBT2222A-TP
Micro Commercial Co

-
MMBTA06LT1G
onsemi

-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

