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onsemi 2N3905TFR

Part No.:
2N3905TFR
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Datasheet:
Aetrix2N3905TFR.pdf
Description:
TRANS PNP 40V 0.2A TO-92-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,169

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Product details

Overview

2N3905TFR from Fairchild Semiconductor is a PNP general-purpose bipolar junction transistor used for low-power amplification and switching in discrete analog and digital circuits, with VCEO = 40 V, IC = 200 mA continuous, hFE ≥ 30 at IC = 0.1 mA, and TO-92 package. It operates across –55°C to +150°C and supports applications such as signal inversion, level shifting, and load switching in consumer and industrial control boards.

For engineers reviewing the 2N3905TFR datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP polarity, DC current gain range (30–150), saturation voltage (VCE(sat) ≤ 0.40 V at IC = 50 mA), thermal resistance (RθJA = 200 °C/W), and compatibility with through-hole prototyping and legacy PCB layouts.

Technical Context

The 2N3905TFR functions as a silicon PNP BJT with fixed-emitter biasing capability and operates in active, saturation, and cutoff regions depending on base drive. Its small-signal hfe reaches 200 at IC = 1.0 mA and f = 100 MHz, while noise figure is 5.0 dB at 100 µA and 1 kHz bandwidth - confirming suitability for low-noise preamplifier stages.

Switching performance is characterized by td = 35 ns, tr = 35 ns, ts = 200 ns, and tf = 60 ns under pulsed conditions (≤300 µs, ≤2% duty cycle), enabling use in moderate-speed logic interface and relay driver circuits where propagation delay and storage time are design-critical.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO40 V - Maximum allowable collector-emitter voltage before breakdown; defines safe operating voltage headroom in common-emitter switch designs.
IC (continuous)200 mA - Absolute max DC collector current; sets upper limit for sustained load-driving capability without thermal derating.
hFE (min)30 at IC = 0.1 mA - Minimum DC current gain at light bias; ensures reliable turn-on margin in high-impedance base-drive configurations.
VCE(sat)0.40 V at IC = 50 mA, IB = 5.0 mA - Low saturation voltage reduces power loss and heating in switching applications.
TJ range–55°C to +150°C - Wide junction temperature range supports operation in uncontrolled ambient environments including automotive under-hood and industrial enclosures.
PD625 mW at TA = 25°C - Total power dissipation limit; requires thermal derating above 25°C at 5.0 mW/°C for safe continuous operation.
Cob4.5 pF at VCB = 5.0 V, f = 1.0 MHz - Output capacitance impacts high-frequency response and bandwidth in amplifier stages.

Pinout & Package

2N3905TFR is housed in a TO-92 plastic package with standard three-terminal configuration: emitter, base, and collector arranged in linear pin order (E-B-C when viewed with flat side facing outward and leads downward). The package supports manual soldering, wave soldering, and socket-based prototyping.

Pin/TerminalCircuit RoleDesign Meaning
Emitter (E)Current sink terminal for PNP deviceConnected to higher potential (e.g., VCC) in common-emitter switch; provides reference node for base bias network.
Base (B)Control input for minority-carrier injectionReceives forward-biased current to enable conduction; requires current-limiting resistor to prevent overdrive and thermal runaway.
Collector (C)Output current pathTypically tied to load and ground in switching mode; reverse-biased during cutoff to block current flow.

Key Features

FeatureDesign Value
High DC current gain consistencyhFE spans 30–150 across IC = 0.1–100 mA, enabling predictable biasing in both linear and saturated operation.
Low saturation voltageVCE(sat) ≤ 0.40 V at rated IC/IB, minimizing conduction loss and self-heating in power-switching roles.
Stable high-frequency gainhfe = 50–200 at f = 1–100 MHz, supporting audio and low-MHz signal amplification without external compensation.
Low noise performanceNF = 5.0 dB at IC = 100 µA, RS = 1.0 kΩ, BW = 10 Hz–15.7 kHz - suitable for microphone preamp and sensor signal conditioning.
Robust thermal ratingRθJA = 200 °C/W allows operation up to +125°C ambient with proper board copper area, meeting industrial-grade reliability requirements.

Applications

Audio Signal InversionDiscrete Logic Level Shifting

Use Scenario: Inverting stage in single-supply op-amp auxiliary circuitry or headphone driver feedback loop.

IC Role / Device Role / Timing Role: PNP BJT configured in common-emitter topology to provide phase inversion and current gain.

Use Value: Delivers clean 180° signal inversion with <5.0 dB noise contribution and minimal distortion at 10–20 kHz audio band.

Use Scenario: Translating 3.3 V logic outputs to 5 V or 12 V compatible levels for legacy microcontroller peripherals.

IC Role / Device Role / Timing Role: Discrete level shifter using emitter-follower or common-base configuration.

Use Value: Enables bidirectional voltage translation with <35 ns propagation delay and no external supply rail beyond target VCC.

Relay Driver InterfaceTemperature-Stable Bias Network

Use Scenario: Driving 5–12 V coil relays in HVAC control panels and programmable logic modules.

IC Role / Device Role / Timing Role: Saturated PNP switch controlling relay coil current path to ground.

Use Value: Supports 100+ mA coil loads with VCE(sat) ≤ 0.40 V, reducing relay dropout time and contact arcing risk.

Use Scenario: Setting stable quiescent current in Class-A amplifier bias chains across –40°C to +85°C ambient.

IC Role / Device Role / Timing Role: Current source element in emitter-degenerated bias circuit with negative temperature coefficient compensation.

Use Value: Maintains ±15% IC variation over full temperature range due to matched hFE and VBE tracking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose amplifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MPSA56Higher hFE (100–300), same VCEO/IC, TO-92 packageBetter suited for low-base-drive amplification; less margin in saturation at high ICSelect when higher current gain is required and VCE(sat) > 0.5 V is acceptable.
BC557Lower VCEO (45 V), hFE 110–800, TO-92, higher leakage (ICEX ≤ 500 nA)Preferred in European designs; wider hFE spread increases production test variability.Choose for cost-sensitive consumer products where tighter hFE binning is not required.

Compared with MPSA56 and BC557, the 2N3905TFR offers tighter hFE consistency at low currents, lower noise, and superior thermal stability - making it preferred for precision bias networks and low-level analog signal paths where repeatability matters.

Availability

2N3905TFR is available at Aetrix Electronics and suitable for audio signal inversion, discrete logic level shifting, and relay driver interface applications requiring stable component supply, long-term obsolescence management, and consistent parametric performance across manufacturing lots.

Supply support for 2N3905TFR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.

The 2N3905TFR belongs to Fairchild's legacy general-purpose transistor family, designed specifically for cost-effective, reliable amplification and switching in non-critical analog and digital subsystems.

FAQ

What is the maximum collector-emitter voltage rating for the 2N3905TFR?

The 2N3905TFR has a maximum collector-emitter voltage (VCEO) rating of 40 V at TA = 25°C. This value remains valid up to +125°C ambient, but designers must verify derated voltage limits per application-specific thermal conditions. Exceeding 40 V risks irreversible avalanche breakdown and permanent device failure. The 2N3905TFR datasheet specifies this as an absolute maximum rating, not a recommended operating condition.

Does the 2N3905TFR support surface-mount assembly?

No, the 2N3905TFR uses a through-hole TO-92 package and is not compatible with standard SMT reflow or pick-and-place processes. It requires axial or radial lead insertion and wave or hand soldering. For surface-mount equivalents, consider SOT-23-packaged PNP transistors like the MMBT3906, but note that those differ in pinout, thermal performance, and gain characteristics versus the 2N3905TFR.

What is the typical noise figure of the 2N3905TFR and under what conditions is it measured?

The 2N3905TFR exhibits a typical noise figure (NF) of 5.0 dB when measured at VCE = 5.0 V, IC = 100 µA, RS = 1.0 kΩ, and bandwidth from 10 Hz to 15.7 kHz. This value is confirmed in Fairchild's official datasheet Rev A and reflects performance in low-current, low-frequency small-signal amplification - making the 2N3905TFR suitable for microphone preamplifiers and sensor front-ends where noise minimization is critical.

Can the 2N3905TFR be used in switching applications above 100 kHz?

The 2N3905TFR achieves usable switching performance up to approximately 100 kHz in resistive-load applications, based on its specified td = 35 ns, tr = 35 ns, ts = 200 ns, and tf = 60 ns under pulsed test conditions. However, storage time (ts) dominates at higher frequencies, limiting efficiency in PWM-driven inductive loads. For >200 kHz switching, the 2N3905TFR is not recommended; instead, consider RF-optimized or Schottky-clamped PNP devices.

How does the DC current gain (hFE) of the 2N3905TFR vary with collector current?

The 2N3905TFR's hFE peaks near 10–20 mA (typically 100–150), decreases to ~50 at IC = 100 mA, and drops to ≥30 at IC = 0.1 mA - as verified in the "Typical Pulsed Current Gain vs Collector Current" graph in the Fairchild datasheet. This non-linear behavior must be accounted for in bias design; the 2N3905TFR performs best in mid-range IC (1–50 mA) for stable amplification and switching.

2N3905TFR Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
200 mA
Voltage - Collector Emitter Breakdown (Max):
40 V
Vce Saturation (Max) @ Ib, Ic:
400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 10mA, 1V
Power - Max:
625 mW
Frequency - Transition:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-92-3

2N3905TFR FAQ

1.How can I place an order for 2N3905TFR through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N3905TFR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N3905TFR reliable?

The price and inventory of 2N3905TFR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N3905TFR is usually 5 days.

3.What payment methods are accepted for 2N3905TFR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N3905TFR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N3905TFR?

2N3905TFR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N3905TFR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N3905TFR?

For technical support, including 2N3905TFR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N3905TFR requirements.

6.How does Aetrix verify that 2N3905TFR is sourced from the original manufacturer or authorized distributors?

All 2N3905TFR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N3905TFR meets industry standards.

7.What is the process for return or replacement of 2N3905TFR?

All 2N3905TFR units undergo pre-shipment inspection (PSI). If there is an issue with 2N3905TFR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N3905TFR part is unused and in its original packaging.

Return procedure for 2N3905TFR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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