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onsemi 2N3906_D27ZS00Z
- Part No.:
- 2N3906_D27ZS00Z
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Datasheet:
-
2N3906_D27ZS00Z.pdf
- Description:
- TRANS PNP 40V 0.2A TO-92-3
- Quantity:
- Payment:
- Shipping:
Inventory:3,207
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Product details
Overview
2N3906_D27ZS00Z from onsemi is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching at collector currents from 10 mA to 100 mA. It features a −40 V collector-emitter breakdown voltage, −200 mA continuous collector current rating, and DC current gain (hFE) ranging from 60 to 300 depending on operating conditions. It is commonly used in low-power signal inversion, discrete logic level shifting, and load switching in industrial control interfaces.
For engineers reviewing the 2N3906_D27ZS00Z datasheet, pinout, applications, or equivalent options, key selection criteria include its TO-92 package compatibility, PNP polarity, −0.25 V VCE(sat) at −10 mA/−1 mA drive, thermal resistance of 200 °C/W, and suitability for discrete amplifier stages requiring stable hFE across −55 °C to +150 °C ambient.
Technical Context
The 2N3906_D27ZS00Z operates as a silicon PNP BJT with fixed emitter-base and collector-base junctions optimized for linear amplification and saturated switching. Its hFE varies predictably with collector current-80 min at −1 mA, 100 min at −10 mA, and 30 min at −100 mA-enabling bias design across multiple operating points.
It delivers 250 MHz current-gain bandwidth (fT) under −10 mA/−20 V conditions, supports low-noise operation (4.0 dB NF at 10 Hz–15.7 kHz), and exhibits fast switching with 35 ns delay/rise times and 75 ns fall time-critical for pulse-width modulation and digital interface buffering.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −40 V: Maximum reverse-biased collector-emitter voltage before breakdown; sets safe operating range for low-voltage PNP switch designs. |
| IC (continuous) | −200 mA: Absolute maximum DC collector current; usable up to −100 mA per datasheet-defined general-purpose operating zone. |
| hFE | 60–300: DC current gain range across −0.1 mA to −100 mA IC; enables predictable base drive calculation for amplifier biasing and switch saturation. |
| VCE(sat) | −0.25 V @ −10 mA/−1 mA: Low saturation voltage ensures minimal power loss and heat generation in switching applications. |
| fT | 250 MHz: Current-gain bandwidth product; supports RF preamplifier use up to ~100 MHz with adequate gain margin. |
| RθJA | 200 °C/W: Junction-to-ambient thermal resistance in TO-92 package; defines required PCB copper area and airflow for thermal management. |
| NF | 4.0 dB @ 100 μA, 1 kHz: Noise figure specifies minimum added noise in audio and sensor front-end amplifiers. |
Pinout & Package
2N3906_D27ZS00Z is housed in a through-hole TO-92 package (JEDEC TO-92 compliant), with leads arranged in E-B-C order (Emitter–Base–Collector) when viewed from the flat side with leads pointing downward.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 (left) | Emitter (E) | Current sink terminal; connects to higher potential rail in PNP common-emitter configurations. |
| Lead 2 (center) | Base (B) | Control input; requires negative base current relative to emitter to turn on device. |
| Lead 3 (right) | Collector (C) | Output terminal; carries amplified/saturated current to load referenced to ground or lower potential. |
Key Features
| Feature | Design Value |
|---|---|
| PNP polarity with −40 V VCEO | Enables high-side switching and complementary pair use with NPN 2N3904 in push-pull output stages. |
| hFE = 100 min @ −10 mA | Ensures reliable saturation with modest base drive, reducing MCU GPIO current burden in digital interface applications. |
| Low VCE(sat) = −0.25 V | Minimizes conduction loss in battery-powered load switches, extending operational runtime. |
| 250 MHz fT | Supports wideband small-signal amplification in IF stages and oscillator buffer circuits. |
| −55 °C to +150 °C TJ | Validates operation in automotive engine bay, industrial PLC modules, and outdoor embedded systems without derating. |
Applications
| Discrete Logic Level Shifting | Low-Power Audio Preamp Stage |
|---|---|
|
Use Scenario: Converting 3.3 V microcontroller outputs to 5 V or 12 V logic levels for legacy peripherals. IC Role / Device Role / Timing Role: PNP BJT configured as an active-low inverter with pull-up resistor; provides rail-to-rail voltage translation. Use Value: Eliminates need for dedicated level-shifter ICs while maintaining <100 ns propagation delay and low component count. |
Use Scenario: Amplifying microphone or piezoelectric sensor signals in portable diagnostic equipment. IC Role / Device Role / Timing Role: Common-emitter amplifier with emitter degeneration resistor for stable DC bias and gain control. Use Value: Delivers 4.0 dB noise figure and >100 kHz bandwidth-sufficient for voice-band and vibration sensing without op-amp complexity. |
| Industrial Relay Driver | LED Current Sink Switch |
|
Use Scenario: Driving 12 V/24 V electromagnetic relays in programmable logic controllers and HVAC control panels. IC Role / Device Role / Timing Role: Saturated PNP switch sinking relay coil current through emitter to supply rail. Use Value: −0.25 V VCE(sat) limits power dissipation to <2.5 mW at 10 mA coil hold current, enabling compact heatsink-free layout. |
Use Scenario: Controlling indicator LEDs in medical devices where precise current regulation and low standby leakage are critical. IC Role / Device Role / Timing Role: Constant-current sink using base bias network and emitter resistor to set LED current. Use Value: −50 nA ICEX ensures <1 μA off-state leakage-preserving battery life in always-on monitoring units. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP general-purpose amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT3906 | SOT-23 surface-mount package; RθJA = 357 °C/W; same electrical specs but lower power dissipation (350 mW). | Preferred for space-constrained PCBs and automated assembly; unsuitable for >150 mW continuous dissipation. | Select MMBT3906 when board real estate or reflow compatibility outweighs thermal performance needs. |
| PZT3906 | SOT-223 package with 4-pin footprint; RθJA = 125 °C/W; PD = 1000 mW; identical electrical characteristics. | Used in higher-power analog stages or thermally demanding environments where TO-92 cannot meet thermal budget. | Choose PZT3906 when >500 mW average power handling or improved thermal stability is required. |
Compared with MMBT3906 and PZT3906, the 2N3906_D27ZS00Z offers optimal balance of manufacturability, thermal performance (625 mW PD), and legacy through-hole compatibility-making it ideal for prototyping, repair, and cost-sensitive industrial designs where manual assembly remains viable.
Availability
2N3906_D27ZS00Z is available at Aetrix Electronics and suitable for industrial control interfaces, discrete analog signal conditioning, and low-power switching applications requiring stable component supply and long-term obsolescence management.
Supply support for 2N3906_D27ZS00Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.
The 2N3906_D27ZS00Z belongs to onsemi's legacy general-purpose transistor family, engineered for reliability, broad temperature operation, and ease of integration into discrete amplifier and switching circuits across cost-sensitive applications.
FAQ
What is the pin configuration of the 2N3906_D27ZS00Z?
The 2N3906_D27ZS00Z uses a TO-92 package with Emitter–Base–Collector (E-B-C) pinout when viewed from the flat side with leads pointing downward. Lead 1 (left) is Emitter, Lead 2 (center) is Base, and Lead 3 (right) is Collector. This configuration is standardized per JEDEC TO-92 and verified in onsemi's official package drawings for the 2N3906 series.
Does the 2N3906_D27ZS00Z support operation at elevated temperatures?
Yes, the 2N3906_D27ZS00Z is rated for junction temperatures from −55 °C to +150 °C. Its thermal resistance (RθJA = 200 °C/W) and 625 mW power dissipation allow reliable operation in industrial enclosures and automotive under-hood environments when mounted on standard FR-4 PCBs with appropriate copper area.
What is the typical DC current gain (hFE) of the 2N3906_D27ZS00Z at 10 mA collector current?
The 2N3906_D27ZS00Z has a minimum hFE of 100 at −10 mA collector current and −1.0 V VCE, with typical values reaching 150–200. This gain stability enables predictable base resistor selection for both linear amplification and saturated switching modes in the 2N3906_D27ZS00Z.
Can the 2N3906_D27ZS00Z be used as a direct replacement for the 2N3904 in circuit designs?
No-the 2N3906_D27ZS00Z is a PNP transistor, while the 2N3904 is NPN. They are complementary, not interchangeable. Swapping them without inverting biasing and supply connections will prevent circuit operation. The 2N3906_D27ZS00Z is intended for high-side switching or inverted logic roles where the 2N3904 cannot function.
What is the maximum allowable collector-emitter voltage for the 2N3906_D27ZS00Z?
The absolute maximum collector-emitter voltage (VCEO) for the 2N3906_D27ZS00Z is −40 V. This rating applies under open-base conditions at TA = 25 °C and defines the upper limit for reverse-biased operation in switching and amplifier applications. Exceeding this value risks permanent junction breakdown.
2N3906_D27ZS00Z Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 200 mA
- Voltage - Collector Emitter Breakdown (Max):
- 40 V
- Vce Saturation (Max) @ Ib, Ic:
- 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 10mA, 1V
- Power - Max:
- 625 mW
- Frequency - Transition:
- 250MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92-3
2N3906_D27ZS00Z FAQ
1.How can I place an order for 2N3906_D27ZS00Z through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N3906_D27ZS00Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N3906_D27ZS00Z reliable?
The price and inventory of 2N3906_D27ZS00Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N3906_D27ZS00Z is usually 5 days.
3.What payment methods are accepted for 2N3906_D27ZS00Z?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N3906_D27ZS00Z transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N3906_D27ZS00Z?
2N3906_D27ZS00Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N3906_D27ZS00Z order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N3906_D27ZS00Z?
For technical support, including 2N3906_D27ZS00Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N3906_D27ZS00Z requirements.
6.How does Aetrix verify that 2N3906_D27ZS00Z is sourced from the original manufacturer or authorized distributors?
All 2N3906_D27ZS00Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N3906_D27ZS00Z meets industry standards.
7.What is the process for return or replacement of 2N3906_D27ZS00Z?
All 2N3906_D27ZS00Z units undergo pre-shipment inspection (PSI). If there is an issue with 2N3906_D27ZS00Z, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N3906_D27ZS00Z part is unused and in its original packaging.
Return procedure for 2N3906_D27ZS00Z:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2N3906_D27ZS00Z Tags
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MMBT3906LT1G
onsemi
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Nexperia USA Inc.
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