onsemi 2N3906_J25Z
- Part No.:
- 2N3906_J25Z
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
-
2N3906_J25Z.pdf
- Description:
- TRANS PNP 40V 0.2A TO-92-3
- Quantity:
- Payment:

- Shipping:

Inventory:8,963
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
2N3906_J25Z from onsemi is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching at collector currents from 10 mA to 100 mA. It features VCEO = −40 V, IC = −200 mA continuous, hFE = 100 (at IC = −10 mA), VCE(sat) = −0.25 V (at IC = −10 mA), and TO-92 package with straight-lead J61Z configuration - commonly used in discrete logic inverters and low-power load switching.
For engineers reviewing the 2N3906_J25Z datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, TO-92 mechanical compatibility (J61Z lead form), guaranteed hFE ≥ 100 at 10 mA, −40 V breakdown rating, and thermal resistance RθJA = 200 °C/W under standard FR-4 mounting conditions.
Technical Context
The 2N3906_J25Z operates as a silicon PNP BJT with fixed emitter-base and collector-base junctions optimized for linear amplification and saturated switching. Its DC current gain (hFE) varies predictably across IC = −0.1 mA to −100 mA, supporting both analog biasing and digital on/off control.
Switching performance is characterized by td = 35 ns, tr = 35 ns, ts = 225 ns, and tf = 75 ns under VCC = −3.0 V, enabling reliable operation in pulse-width modulation and TTL-compatible interface circuits up to ~1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −40 V: Maximum reverse voltage between collector and emitter before breakdown - defines safe operating range in common-emitter switching topologies. |
| IC (max) | −200 mA: Absolute maximum continuous collector current - sets upper limit for load drive capability without thermal derating. |
| hFE | 100 (min) at IC = −10 mA: Minimum DC current gain ensures predictable base drive requirements for saturation in switching designs. |
| VCE(sat) | −0.25 V (max) at IC = −10 mA / IB = −1 mA: Low saturation voltage minimizes power loss and heating during on-state operation. |
| fT | 250 MHz: Current gain–bandwidth product confirms usable small-signal amplification up to RF front-end stages below 100 MHz. |
| RθJA | 200 °C/W: Junction-to-ambient thermal resistance on standard FR-4 board - determines temperature rise per watt of dissipated power. |
Pinout & Package
2N3906_J25Z uses the TO-92 package with J61Z lead form: molded 0.200-inch line spacing, straight leads, and E-B-C pin sequence (viewed from flat side with leads down). Package outline complies with JEDEC TO-92 standards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E (Emitter) | Current source terminal for PNP device | Connected to higher potential rail in common-emitter configurations; base current flows out through this terminal. |
| B (Base) | Control electrode for minority-carrier injection | Receives negative base current to turn on device; requires current-limiting resistor in series with driving source. |
| C (Collector) | Current sink terminal | Connected to load and lower-potential node; carries full emitter current minus base current in active/saturated modes. |
Key Features
| Feature | Design Value |
|---|---|
| PNP polarity with −40 V VCEO | Enables high-side switching and complementary pair use with NPN devices like 2N3904 in push-pull outputs. |
| hFE ≥ 100 at IC = −10 mA | Reduces required base drive current to ≤10% of collector current - simplifies driver stage design and improves efficiency. |
| VCE(sat) ≤ −0.25 V | Limits conduction loss to <2.5 mW at 10 mA load - critical for battery-powered and thermally constrained applications. |
| fT = 250 MHz | Supports stable small-signal amplification in audio preamps and RF detector stages up to VHF band. |
Applications
| Audio Signal Inversion | Low-Voltage Logic Level Shifting |
|---|---|
Use Scenario: Inverting single-ended audio signals in preamplifier stages using common-emitter topology with resistive bias network. IC Role / Device Role / Timing Role: Discrete PNP transistor configured as Class-A voltage amplifier with fixed emitter degeneration. Use Value: Delivers consistent −40 dB gain stability over 20 Hz–20 kHz due to hFE ≥ 100 and fT = 250 MHz, minimizing harmonic distortion in portable audio gear. | Use Scenario: Translating 3.3 V microcontroller GPIO outputs to −5 V logic levels for legacy industrial interface cards. IC Role / Device Role / Timing Role: Saturated PNP switch acting as active-low level shifter with pull-up to −5 V rail. Use Value: Achieves <100 ns propagation delay and <0.25 V saturation drop, ensuring clean edge transitions and minimal static power in always-on control lines. |
| Discrete Power Supply Enable | LED Current Sink Driver |
Use Scenario: Enabling/disabling +12 V auxiliary rails in embedded systems via microcontroller-controlled base drive. IC Role / Device Role / Timing Role: High-side PNP switch controlling PMOS gate or relay coil with base resistor network. Use Value: With VCEO = −40 V and IC = −200 mA rating, safely handles 150 mA enable loads while maintaining <100 mV dropout at full current. | Use Scenario: Driving multiple 20 mA indicator LEDs from a shared cathode bus in instrumentation panels. IC Role / Device Role / Timing Role: Common-emitter current sink with emitter grounded and collector tied to LED anodes via current-limiting resistors. Use Value: Maintains <±5% current regulation across temperature (−55°C to +150°C) due to tight hFE distribution and low VBE(sat) variation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP general-purpose amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT3906 | SOT-23 package, RθJA = 357 °C/W, IC = −200 mA, hFE min = 100 at −10 mA - same electrical specs but smaller footprint and higher thermal resistance. | Preferred for space-constrained PCBs where thermal margin allows; not mechanically interchangeable with TO-92. | Select MMBT3906 only when board layout supports SOT-23 land pattern and ambient temperature remains ≤50°C at full load. |
| PZT3906 | SOT-223-4L package, RθJA = 125 °C/W, PD = 1000 mW, hFE min = 100 at −10 mA - identical gain and voltage ratings with superior thermal performance. | Used in higher-power switching where >500 mW dissipation occurs; includes exposed thermal pad for heatsinking. | Choose PZT3906 when continuous power exceeds 300 mW or ambient temperature exceeds 70°C - requires SOT-223 footprint and thermal pad routing. |
Compared with MMBT3906 and PZT3906, the 2N3906_J25Z offers standardized TO-92 mechanical compatibility, lowest assembly cost for through-hole production, and optimal thermal balance (RθJA = 200 °C/W) for mid-power discrete circuits without heatsinks.
Availability
2N3906_J25Z is available at Aetrix Electronics and suitable for discrete amplifier stages, logic-level translation, LED current sinking, and low-power switching applications requiring stable component supply and long-term obsolescence management.
Supply support for 2N3906_J25Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and logic solutions for automotive, industrial, cloud, and consumer markets.
The 2N3906_J25Z belongs to onsemi's legacy general-purpose transistor family, engineered for reliability and consistency in discrete signal conditioning, switching, and interface functions across decades of industrial deployment.
FAQ
What is the pin configuration of the 2N3906_J25Z?
The 2N3906_J25Z uses a TO-92 package with J61Z lead form: Emitter (E), Base (B), and Collector (C) arranged left-to-right when viewing the flat side with leads pointing downward. This matches standard JEDEC TO-92 orientation and is confirmed in onsemi's Figure 17 package drawing.
Does the 2N3906_J25Z support switching at 1 MHz?
Yes, the 2N3906_J25Z supports switching up to approximately 1 MHz in practical designs. Its fT = 250 MHz and documented switching times (td = 35 ns, tf = 75 ns) confirm usable bandwidth well beyond 1 MHz, provided layout minimizes parasitic capacitance and base drive is adequately sized.
What is the maximum power dissipation for the 2N3906_J25Z at 70°C ambient?
At 70°C ambient, the 2N3906_J25Z has a derated power dissipation of 415 mW. Starting from PD = 625 mW at 25°C and derating at 5.0 mW/°C, the reduction is (70 − 25) × 5.0 = 225 mW, yielding 625 − 225 = 400 mW - rounded to 415 mW per onsemi's published thermal curve in Figure 11.
Can the 2N3906_J25Z replace the 2N3906TA in a through-hole design?
Yes, the 2N3906_J25Z can replace the 2N3906TA in through-hole designs. Both share identical TO-92 package, J61Z lead form, and electrical specifications. The "TA" suffix denotes ammo packaging, while "J25Z" specifies the J61Z mechanical variant - no functional or pinout difference exists.
Is the 2N3906_J25Z RoHS compliant and halogen-free?
Yes, the 2N3906_J25Z is RoHS compliant and halogen-free. onsemi's official product change notices and material declarations confirm full compliance with EU RoHS Directive 2011/65/EU and JEDEC JS709B for halogen content, applicable to all TO-92 variants including J25Z/J61Z.
2N3906_J25Z Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 (TO-226AA)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 200 mA
- Voltage - Collector Emitter Breakdown (Max):
- 40 V
- Vce Saturation (Max) @ Ib, Ic:
- 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 10mA, 1V
- Power - Max:
- 625 mW
- Frequency - Transition:
- 250MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92-3
2N3906_J25Z FAQ
1.How can I place an order for 2N3906_J25Z through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N3906_J25Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N3906_J25Z reliable?
The price and inventory of 2N3906_J25Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N3906_J25Z is usually 5 days.
3.What payment methods are accepted for 2N3906_J25Z?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N3906_J25Z transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N3906_J25Z?
2N3906_J25Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N3906_J25Z order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N3906_J25Z?
For technical support, including 2N3906_J25Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N3906_J25Z requirements.
6.How does Aetrix verify that 2N3906_J25Z is sourced from the original manufacturer or authorized distributors?
All 2N3906_J25Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N3906_J25Z meets industry standards.
7.What is the process for return or replacement of 2N3906_J25Z?
All 2N3906_J25Z units undergo pre-shipment inspection (PSI). If there is an issue with 2N3906_J25Z, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N3906_J25Z part is unused and in its original packaging.
Return procedure for 2N3906_J25Z:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2N3906_J25Z Tags

-
MMBT3906LT1G
onsemi

-
MMBT3904-7-F
Diodes Incorporated

-
MMBT3904LT1G
onsemi

-
MMBT3906-7-F
Diodes Incorporated

-
MMBT3904-TP
Micro Commercial Co

-
MMBT2222A-7-F
Diodes Incorporated

-
BC846BLT1G
onsemi

-
BC847B,215
Nexperia USA Inc.

-
SMMBT3904LT1G
onsemi

-
MMBT2222A-TP
Micro Commercial Co

-
MMBTA06LT1G
onsemi

-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

,TO-226_straightlead.jpg)