onsemi 2N3906RLRAG

Overview

2N3906RLRAG from ON Semiconductor is a PNP bipolar junction transistor designed for general-purpose amplification and low-power switching in discrete analog and digital circuits, with −40 V V_CEO, −200 mA I_C, and 625 mW P_D in TO-92 package. It operates across −55 °C to +150 °C and delivers h_FE = 100 at I_C = −10 mA, supporting biasing, signal inversion, and load control in power management and interface stages.

For engineers reviewing the 2N3906RLRAG datasheet, pinout, applications, or equivalent options, this page provides verified package mapping (TO-92), confirmed terminal roles (Emitter-Base-Collector), absolute maximum ratings, switching timing data (t_s = 225 ns), thermal resistance (R_θJA = 200 °C/W), and direct alternatives for legacy BJT replacement.

Technical Context

The 2N3906RLRAG implements a silicon PNP planar epitaxial structure optimized for linear amplification and saturated switching. Its DC current gain spans h_FE = 60–300 depending on collector current (−0.1 mA to −100 mA), and it achieves V_CE(sat) = −0.25 V at I_C = −10 mA / I_B = −1.0 mA - enabling efficient low-voltage switching in battery-powered logic interfaces.

Small-signal performance includes f_T = 250 MHz at I_C = −10 mA, C_obo = 4.5 pF, and NF = 4.0 dB at 10 Hz–15.7 kHz, confirming suitability for audio preamplifier and RF detector front-ends. Switching behavior is characterized by t_d = 35 ns, t_r = 35 ns, t_s = 225 ns, and t_f = 75 ns under defined test conditions.

Key Specifications

Pinout & Package

2N3906RLRAG uses the industry-standard TO-92 through-hole package (JEDEC TO-92 compliant), with straight leads and molded plastic body. Pin identification follows EBC configuration when viewed with flat side facing user and leads pointing downward: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose amplifier applications.

Compared with MMBT3906LT1G, 2N3906RLRAG offers 77% higher power dissipation and direct through-hole compatibility; compared with PN2907A, it trades 20 V breakdown headroom for faster switching and tighter h_FE distribution at low currents - making it optimal for cost-sensitive 5 V/12 V consumer and industrial signal conditioning.

Availability

2N3906RLRAG is available at Aetrix Electronics and suitable for audio preamplification, discrete logic level shifting, and relay driving applications requiring stable component supply, long-term obsolescence management, and full traceability from ON Semiconductor's qualified manufacturing lines.

Supply support for 2N3906RLRAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (formerly Fairchild Semiconductor) is a global semiconductor supplier specializing in power management, analog, sensors, and discrete devices for automotive, industrial, and cloud infrastructure markets.

The 2N3906RLRAG belongs to ON Semiconductor's legacy general-purpose BJT family, engineered for reliability and consistency in cost-sensitive linear and switching applications where proven silicon performance outweighs advanced integration.

FAQ

What is the package type and lead configuration of 2N3906RLRAG?

The 2N3906RLRAG uses the TO-92 through-hole package with three leads arranged in EBC order (Emitter-Base-Collector) when viewed with the flat side facing the user and leads pointing downward. This configuration matches JEDEC TO-92 standards and is compatible with standard breadboards and wave-soldered PCBs. The 2N3906RLRAG package drawing is documented in Fairchild's ZA03D specification.

Does 2N3906RLRAG support operation at elevated temperatures?

Yes, the 2N3906RLRAG is rated for junction temperatures from −55 °C to +150 °C, with guaranteed electrical performance across this full range. Its thermal resistance R_θJA = 200 °C/W on standard FR-4 PCB allows continuous operation up to +85 °C ambient without derating when dissipating ≤250 mW. For 2N3906RLRAG deployments in engine compartments or enclosed industrial enclosures, thermal simulation is recommended.

What is the typical DC current gain (h_FE) of 2N3906RLRAG at 10 mA collector current?

The 2N3906RLRAG delivers h_FE = 100 (minimum) at I_C = −10 mA and V_CE = −1.0 V, with typical values reaching 300 under the same conditions. This gain range enables predictable biasing in amplifier stages and ensures sufficient drive capability for switching loads up to 100 mA. The 2N3906RLRAG h_FE curve remains stable across temperature, supporting robust circuit design without gain compensation.

Can 2N3906RLRAG be used as a direct replacement for older 2N3906 variants?

Yes, the 2N3906RLRAG is a fully compatible revision of the classic 2N3906 PNP transistor, maintaining identical absolute maximum ratings, electrical characteristics, TO-92 package dimensions, and pinout. It supersedes earlier Fairchild-marked versions and meets ON Semiconductor's updated quality and traceability standards while preserving drop-in functionality in legacy designs.

What are the key switching timing parameters for 2N3906RLRAG?

The 2N3906RLRAG exhibits t_d = 35 ns, t_r = 35 ns, t_s = 225 ns, and t_f = 75 ns under standardized test conditions (V_CC = −3.0 V, I_C = −10 mA). These values confirm suitability for digital switching up to 1 MHz and make the 2N3906RLRAG appropriate for PWM dimming, relay control, and clock buffering where predictable turn-off delay is critical.