Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi 2N3906ZL1G

Part No.:
2N3906ZL1G
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-226-3, TO-92-3 Long Body, Formed Leads
Datasheet:
Aetrix2N3906ZL1G.pdf
Description:
TRANS PNP 40V 0.2A TO92
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,550

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

2N3906ZL1G from onsemi is a PNP silicon general-purpose transistor in TO-92 package, rated for VCEO = 40 V, IC = 200 mA, and PD = 625 mW at TA = 25°C. It delivers hFE = 100 (at IC = 10 mA, VCE = 1.0 V) and VCE(sat) ≤ 0.25 V (IC = 10 mA, IB = 1.0 mA), widely used in low-power switching and linear amplification circuits.

For engineers reviewing the 2N3906ZL1G datasheet, pinout, applications, or equivalent options, key selection considerations include its PNP polarity, TO-92 mechanical compatibility, guaranteed hFE range across collector current, saturation voltage performance at defined drive conditions, and thermal derating behavior above 25°C ambient.

Technical Context

The 2N3906ZL1G operates as a discrete bipolar junction transistor with fixed emitter-base-collector terminal assignment per TO-92 Style 1 (Emitter = Pin 1, Base = Pin 2, Collector = Pin 3). Its DC current gain (hFE) varies from 60 to 300 depending on collector current - 60 at IC = 100 mA and 300 at IC = 0.1 mA - enabling predictable biasing in both switching and analog configurations.

Small-signal parameters include fT = 250 MHz, Cobo ≤ 4.5 pF, and hie = 2.0–12 kΩ, supporting stable operation up to mid-VHF frequencies. Switching times are characterized with td/tr ≤ 35 ns and ts ≤ 225 ns under defined test conditions (VCC = 3.0 V, IC = 10 mA, IB1 = IB2 = 1.0 mA), confirming suitability for digital logic interfacing and pulse amplification.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO40 V - Maximum safe collector-emitter voltage before breakdown; defines upper rail limit in PNP switch or amplifier stages.
IC (max)200 mA - Continuous collector current rating; sets load-driving capability in relay drivers or LED sinks.
PD @ 25°C625 mW - Total power dissipation at room temperature; requires thermal derating of 5.0 mW/°C above 25°C ambient.
hFE @ 10 mA100 (min) - Guaranteed DC current gain at medium bias; ensures reliable base drive sizing for saturated switching.
VCE(sat)≤ 0.25 V - Collector-emitter saturation voltage at IC = 10 mA / IB = 1.0 mA; minimizes conduction loss in active-low switches.
fT250 MHz - Transition frequency; supports small-signal amplification up to ~100 MHz with usable gain margin.
RθJA200 °C/W - Junction-to-ambient thermal resistance; informs heatsinking requirements when operating near power limits.

Pinout & Package

2N3906ZL1G is housed in a TO-92 plastic package (Case 29–11), with standardized lead spacing and mechanical dimensions compliant with ANSI Y14.5M. The device uses Style 1 pinout: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Emitter)Current source terminal for PNP operationConnected to higher potential node (e.g., VCC) in common-emitter switch; reference point for base bias network.
Pin 2 (Base)Control input for minority-carrier injectionReceives current-limited drive to turn on/off transistor; requires series resistor to limit IB and ensure saturation.
Pin 3 (Collector)Current sink terminalConnected to load (e.g., relay coil or LED anode); voltage swing here determines output logic level or analog signal range.

Key Features

FeatureDesign Value
Guaranteed hFE range60–300 across IC = 0.1–100 mA enables robust bias design without gain-dependent instability.
Low VCE(sat)≤ 0.25 V at IC/IB = 10 ensures <1% voltage drop across transistor in saturated switching applications.
High fT250 MHz allows use in RF preamps, oscillator buffers, and fast digital interface circuits up to ~50 MHz.
JEDEC-compliant TO-92Standardized footprint and lead form enable direct replacement in legacy through-hole designs and automated assembly.
Wide TJ range–55°C to +150°C junction operation supports deployment in industrial, automotive under-hood, and outdoor equipment.

Applications

LED Driver CircuitLevel-Shifting Interface

Use Scenario: Driving high-brightness indicator LEDs from microcontroller GPIO pins with active-low logic.

IC Role / Device Role / Timing Role: PNP switch sinking current from LED anode to ground via collector, with base driven by MCU output.

Use Value: VCE(sat) ≤ 0.25 V minimizes power loss and heat generation while delivering full LED brightness at 20 mA.

Use Scenario: Translating 3.3 V logic outputs to 5 V or 12 V domains in mixed-voltage systems.

IC Role / Device Role / Timing Role: Active-pull-up level shifter where 2N3906ZL1G pulls high-side rail to logic HIGH when base is pulled LOW.

Use Value: Fast tr/tf ≤ 35 ns ensures clean edge transitions without timing skew in clock or data lines.

Relay Control ModuleAudio Pre-amplifier Stage

Use Scenario: Controlling 5–12 V electromagnetic relays in PLC I/O modules and industrial control panels.

IC Role / Device Role / Timing Role: Saturated switch turning relay coil ON/OFF; collector connected to coil return path, emitter to VCC.

Use Value: IC = 200 mA rating safely exceeds typical relay coil currents (40–150 mA), providing margin for inrush and aging.

Use Scenario: Low-noise voltage amplification stage in microphone preamps and sensor signal conditioning circuits.

IC Role / Device Role / Timing Role: Common-emitter amplifier biased in linear region, using hFE-stable operating point at IC = 1.0 mA.

Use Value: NF ≤ 4.0 dB at 1 kHz and RS = 1 kΩ ensures minimal added noise in sensitive analog front-ends.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MPSA92VCEO = 300 V, IC = 500 mA, TO-92 package, hFE = 50–250Higher voltage blocking and current handling; larger die size increases capacitance and reduces fT (~50 MHz)Select when >40 V supply rails or >200 mA loads require higher ruggedness; not drop-in due to different gain profile and speed.
BC557BVCEO = 45 V, IC = 100 mA, TO-92, hFE = 200–450 at IC = 2 mANarrower IC rating and tighter hFE binning; lower power dissipation (500 mW)Prefer for precision biasing or low-current analog stages where higher hFE consistency matters; verify thermal margin at full load.

Compared with MPSA92 and BC557B, the 2N3906ZL1G offers balanced trade-offs: sufficient voltage/current headroom for most 5–12 V systems, predictable hFE vs. IC curve, and proven manufacturability in high-volume TO-92 assembly - making it ideal for cost-sensitive, reliability-critical general-purpose switching.

Availability

2N3906ZL1G is available at Aetrix Electronics and suitable for LED driver circuits, relay control modules, level-shifting interfaces, and audio pre-amplifier stages requiring stable component supply and long-term obsolescence management.

Supply support for 2N3906ZL1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N3906ZL1G belongs to onsemi's legacy general-purpose bipolar transistor product line, designed for broad compatibility, manufacturability, and reliability in cost-sensitive discrete applications across industrial controls, instrumentation, and legacy electronics.

FAQ

What is the pin configuration of the 2N3906ZL1G?

The 2N3906ZL1G uses TO-92 Style 1 pinout: Pin 1 is Emitter, Pin 2 is Base, and Pin 3 is Collector. This configuration is confirmed in the official onsemi datasheet (2N3906/D, Rev. 0, p.6) and matches industry-standard PNP orientation for through-hole mounting. Always verify orientation via marking dot or lead length before PCB layout.

Does the 2N3906ZL1G support operation at elevated temperatures?

Yes, the 2N3906ZL1G is rated for junction temperatures from –55°C to +150°C. Its thermal resistance RθJA is 200°C/W, so at 625 mW dissipation and 25°C ambient, junction temperature reaches ~150°C - the absolute maximum. For sustained operation above 85°C ambient, derate power linearly by 5.0 mW/°C as specified in the datasheet.

What is the minimum hFE guaranteed for the 2N3906ZL1G at 10 mA collector current?

The 2N3906ZL1G guarantees hFE ≥ 100 at IC = 10 mA and VCE = 1.0 V, per the "ON CHARACTERISTICS" table in the onsemi datasheet (p.2). This value is tested and binned during production, ensuring consistent base drive requirements across units in switching applications.

Can the 2N3906ZL1G be used as a direct replacement for the 2N3906RL1?

Yes - the 2N3906ZL1G and 2N3906RL1 share identical electrical specifications, TO-92 packaging, and Style 1 pinout. The suffix difference (ZL1G vs. RL1) reflects onsemi's internal packaging and tape-and-reel logistics; both meet the same 2N3906 device specification and are functionally interchangeable in all circuit implementations.

Is the 2N3906ZL1G RoHS compliant and lead-free?

Yes, the 2N3906ZL1G is RoHS compliant and lead-free. onsemi confirms this status in its official product change notices and packaging documentation; the "G" suffix in the part number explicitly denotes lead-free (Pb-free) construction per JEDEC standards, with compatible reflow profiles for standard SMT processes.

2N3906ZL1G Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging:
Tape & Box (TB)
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
200 mA
Voltage - Collector Emitter Breakdown (Max):
40 V
Vce Saturation (Max) @ Ib, Ic:
400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 1V
Power - Max:
625 mW
Frequency - Transition:
250MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-92 (TO-226)

2N3906ZL1G FAQ

1.How can I place an order for 2N3906ZL1G through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N3906ZL1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N3906ZL1G reliable?

The price and inventory of 2N3906ZL1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N3906ZL1G is usually 5 days.

3.What payment methods are accepted for 2N3906ZL1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N3906ZL1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N3906ZL1G?

2N3906ZL1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N3906ZL1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N3906ZL1G?

For technical support, including 2N3906ZL1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N3906ZL1G requirements.

6.How does Aetrix verify that 2N3906ZL1G is sourced from the original manufacturer or authorized distributors?

All 2N3906ZL1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N3906ZL1G meets industry standards.

7.What is the process for return or replacement of 2N3906ZL1G?

All 2N3906ZL1G units undergo pre-shipment inspection (PSI). If there is an issue with 2N3906ZL1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N3906ZL1G part is unused and in its original packaging.

Return procedure for 2N3906ZL1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2N3906ZL1G Tags

  • 2N3906ZL1G
  • 2N3906ZL1G PDF
  • 2N3906ZL1G Datasheet
  • 2N3906ZL1G Specifications
  • 2N3906ZL1G Images
  • onsemi
  • onsemi 2N3906ZL1G
  • Buy 2N3906ZL1G
  • 2N3906ZL1G Price
  • 2N3906ZL1G Distributor
  • 2N3906ZL1G Supplier
  • 2N3906ZL1G Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER