onsemi 2N3906ZL1G
- Part No.:
- 2N3906ZL1G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 Long Body, Formed Leads
- Datasheet:
-
2N3906ZL1G.pdf
- Description:
- TRANS PNP 40V 0.2A TO92
- Quantity:
- Payment:

- Shipping:

Inventory:9,550
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Product details
Overview
2N3906ZL1G from onsemi is a PNP silicon general-purpose transistor in TO-92 package, rated for VCEO = 40 V, IC = 200 mA, and PD = 625 mW at TA = 25°C. It delivers hFE = 100 (at IC = 10 mA, VCE = 1.0 V) and VCE(sat) ≤ 0.25 V (IC = 10 mA, IB = 1.0 mA), widely used in low-power switching and linear amplification circuits.
For engineers reviewing the 2N3906ZL1G datasheet, pinout, applications, or equivalent options, key selection considerations include its PNP polarity, TO-92 mechanical compatibility, guaranteed hFE range across collector current, saturation voltage performance at defined drive conditions, and thermal derating behavior above 25°C ambient.
Technical Context
The 2N3906ZL1G operates as a discrete bipolar junction transistor with fixed emitter-base-collector terminal assignment per TO-92 Style 1 (Emitter = Pin 1, Base = Pin 2, Collector = Pin 3). Its DC current gain (hFE) varies from 60 to 300 depending on collector current - 60 at IC = 100 mA and 300 at IC = 0.1 mA - enabling predictable biasing in both switching and analog configurations.
Small-signal parameters include fT = 250 MHz, Cobo ≤ 4.5 pF, and hie = 2.0–12 kΩ, supporting stable operation up to mid-VHF frequencies. Switching times are characterized with td/tr ≤ 35 ns and ts ≤ 225 ns under defined test conditions (VCC = 3.0 V, IC = 10 mA, IB1 = IB2 = 1.0 mA), confirming suitability for digital logic interfacing and pulse amplification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 40 V - Maximum safe collector-emitter voltage before breakdown; defines upper rail limit in PNP switch or amplifier stages. |
| IC (max) | 200 mA - Continuous collector current rating; sets load-driving capability in relay drivers or LED sinks. |
| PD @ 25°C | 625 mW - Total power dissipation at room temperature; requires thermal derating of 5.0 mW/°C above 25°C ambient. |
| hFE @ 10 mA | 100 (min) - Guaranteed DC current gain at medium bias; ensures reliable base drive sizing for saturated switching. |
| VCE(sat) | ≤ 0.25 V - Collector-emitter saturation voltage at IC = 10 mA / IB = 1.0 mA; minimizes conduction loss in active-low switches. |
| fT | 250 MHz - Transition frequency; supports small-signal amplification up to ~100 MHz with usable gain margin. |
| RθJA | 200 °C/W - Junction-to-ambient thermal resistance; informs heatsinking requirements when operating near power limits. |
Pinout & Package
2N3906ZL1G is housed in a TO-92 plastic package (Case 29–11), with standardized lead spacing and mechanical dimensions compliant with ANSI Y14.5M. The device uses Style 1 pinout: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Emitter) | Current source terminal for PNP operation | Connected to higher potential node (e.g., VCC) in common-emitter switch; reference point for base bias network. |
| Pin 2 (Base) | Control input for minority-carrier injection | Receives current-limited drive to turn on/off transistor; requires series resistor to limit IB and ensure saturation. |
| Pin 3 (Collector) | Current sink terminal | Connected to load (e.g., relay coil or LED anode); voltage swing here determines output logic level or analog signal range. |
Key Features
| Feature | Design Value |
|---|---|
| Guaranteed hFE range | 60–300 across IC = 0.1–100 mA enables robust bias design without gain-dependent instability. |
| Low VCE(sat) | ≤ 0.25 V at IC/IB = 10 ensures <1% voltage drop across transistor in saturated switching applications. |
| High fT | 250 MHz allows use in RF preamps, oscillator buffers, and fast digital interface circuits up to ~50 MHz. |
| JEDEC-compliant TO-92 | Standardized footprint and lead form enable direct replacement in legacy through-hole designs and automated assembly. |
| Wide TJ range | –55°C to +150°C junction operation supports deployment in industrial, automotive under-hood, and outdoor equipment. |
Applications
| LED Driver Circuit | Level-Shifting Interface |
|---|---|
Use Scenario: Driving high-brightness indicator LEDs from microcontroller GPIO pins with active-low logic. IC Role / Device Role / Timing Role: PNP switch sinking current from LED anode to ground via collector, with base driven by MCU output. Use Value: VCE(sat) ≤ 0.25 V minimizes power loss and heat generation while delivering full LED brightness at 20 mA. | Use Scenario: Translating 3.3 V logic outputs to 5 V or 12 V domains in mixed-voltage systems. IC Role / Device Role / Timing Role: Active-pull-up level shifter where 2N3906ZL1G pulls high-side rail to logic HIGH when base is pulled LOW. Use Value: Fast tr/tf ≤ 35 ns ensures clean edge transitions without timing skew in clock or data lines. |
| Relay Control Module | Audio Pre-amplifier Stage |
Use Scenario: Controlling 5–12 V electromagnetic relays in PLC I/O modules and industrial control panels. IC Role / Device Role / Timing Role: Saturated switch turning relay coil ON/OFF; collector connected to coil return path, emitter to VCC. Use Value: IC = 200 mA rating safely exceeds typical relay coil currents (40–150 mA), providing margin for inrush and aging. | Use Scenario: Low-noise voltage amplification stage in microphone preamps and sensor signal conditioning circuits. IC Role / Device Role / Timing Role: Common-emitter amplifier biased in linear region, using hFE-stable operating point at IC = 1.0 mA. Use Value: NF ≤ 4.0 dB at 1 kHz and RS = 1 kΩ ensures minimal added noise in sensitive analog front-ends. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP general-purpose transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MPSA92 | VCEO = 300 V, IC = 500 mA, TO-92 package, hFE = 50–250 | Higher voltage blocking and current handling; larger die size increases capacitance and reduces fT (~50 MHz) | Select when >40 V supply rails or >200 mA loads require higher ruggedness; not drop-in due to different gain profile and speed. |
| BC557B | VCEO = 45 V, IC = 100 mA, TO-92, hFE = 200–450 at IC = 2 mA | Narrower IC rating and tighter hFE binning; lower power dissipation (500 mW) | Prefer for precision biasing or low-current analog stages where higher hFE consistency matters; verify thermal margin at full load. |
Compared with MPSA92 and BC557B, the 2N3906ZL1G offers balanced trade-offs: sufficient voltage/current headroom for most 5–12 V systems, predictable hFE vs. IC curve, and proven manufacturability in high-volume TO-92 assembly - making it ideal for cost-sensitive, reliability-critical general-purpose switching.
Availability
2N3906ZL1G is available at Aetrix Electronics and suitable for LED driver circuits, relay control modules, level-shifting interfaces, and audio pre-amplifier stages requiring stable component supply and long-term obsolescence management.
Supply support for 2N3906ZL1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The 2N3906ZL1G belongs to onsemi's legacy general-purpose bipolar transistor product line, designed for broad compatibility, manufacturability, and reliability in cost-sensitive discrete applications across industrial controls, instrumentation, and legacy electronics.
FAQ
What is the pin configuration of the 2N3906ZL1G?
The 2N3906ZL1G uses TO-92 Style 1 pinout: Pin 1 is Emitter, Pin 2 is Base, and Pin 3 is Collector. This configuration is confirmed in the official onsemi datasheet (2N3906/D, Rev. 0, p.6) and matches industry-standard PNP orientation for through-hole mounting. Always verify orientation via marking dot or lead length before PCB layout.
Does the 2N3906ZL1G support operation at elevated temperatures?
Yes, the 2N3906ZL1G is rated for junction temperatures from –55°C to +150°C. Its thermal resistance RθJA is 200°C/W, so at 625 mW dissipation and 25°C ambient, junction temperature reaches ~150°C - the absolute maximum. For sustained operation above 85°C ambient, derate power linearly by 5.0 mW/°C as specified in the datasheet.
What is the minimum hFE guaranteed for the 2N3906ZL1G at 10 mA collector current?
The 2N3906ZL1G guarantees hFE ≥ 100 at IC = 10 mA and VCE = 1.0 V, per the "ON CHARACTERISTICS" table in the onsemi datasheet (p.2). This value is tested and binned during production, ensuring consistent base drive requirements across units in switching applications.
Can the 2N3906ZL1G be used as a direct replacement for the 2N3906RL1?
Yes - the 2N3906ZL1G and 2N3906RL1 share identical electrical specifications, TO-92 packaging, and Style 1 pinout. The suffix difference (ZL1G vs. RL1) reflects onsemi's internal packaging and tape-and-reel logistics; both meet the same 2N3906 device specification and are functionally interchangeable in all circuit implementations.
Is the 2N3906ZL1G RoHS compliant and lead-free?
Yes, the 2N3906ZL1G is RoHS compliant and lead-free. onsemi confirms this status in its official product change notices and packaging documentation; the "G" suffix in the part number explicitly denotes lead-free (Pb-free) construction per JEDEC standards, with compatible reflow profiles for standard SMT processes.
2N3906ZL1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 Long Body, Formed Leads
- Packaging:
- Tape & Box (TB)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 200 mA
- Voltage - Collector Emitter Breakdown (Max):
- 40 V
- Vce Saturation (Max) @ Ib, Ic:
- 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 10mA, 1V
- Power - Max:
- 625 mW
- Frequency - Transition:
- 250MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92 (TO-226)
2N3906ZL1G FAQ
1.How can I place an order for 2N3906ZL1G through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N3906ZL1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N3906ZL1G reliable?
The price and inventory of 2N3906ZL1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N3906ZL1G is usually 5 days.
3.What payment methods are accepted for 2N3906ZL1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N3906ZL1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N3906ZL1G?
2N3906ZL1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N3906ZL1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N3906ZL1G?
For technical support, including 2N3906ZL1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N3906ZL1G requirements.
6.How does Aetrix verify that 2N3906ZL1G is sourced from the original manufacturer or authorized distributors?
All 2N3906ZL1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N3906ZL1G meets industry standards.
7.What is the process for return or replacement of 2N3906ZL1G?
All 2N3906ZL1G units undergo pre-shipment inspection (PSI). If there is an issue with 2N3906ZL1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N3906ZL1G part is unused and in its original packaging.
Return procedure for 2N3906ZL1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2N3906ZL1G Tags

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MMBT3906LT1G
onsemi

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MMBT3904-7-F
Diodes Incorporated

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MMBT3904LT1G
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MMBT3906-7-F
Diodes Incorporated

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MMBT3904-TP
Micro Commercial Co

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Diodes Incorporated

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BC846BLT1G
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BC847B,215
Nexperia USA Inc.

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SMMBT3904LT1G
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MMBT2222A-TP
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MMBTA06LT1G
onsemi

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MMBT2222ALT1G
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