Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi 2N4124TAR

Part No.:
2N4124TAR
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Datasheet:
Aetrix2N4124TAR.pdf
Description:
TRANS NPN 25V 0.2A TO-92-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,973

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

2N4124TAR from Fairchild Semiconductor is an NPN general-purpose bipolar junction transistor designed for low-power amplification and switching in discrete analog and digital circuits. It delivers DC current gain (hFE) of 120–360 at IC = 2 mA, supports 100 MHz small-signal bandwidth (fT), and operates with VCEO = 25 V and continuous IC = 200 mA - commonly used in signal conditioning stages of industrial sensor interfaces and low-voltage logic-level translators.

For engineers reviewing the 2N4124TAR datasheet, pinout, applications, or equivalent options, key selection criteria include its TO-92 package thermal resistance (RθJA = 200 °C/W), saturation voltage (VCE(sat) = 0.3 V @ 50 mA), noise figure (5.0 dB @ 100 µA), and guaranteed fT ≥ 300 MHz - all critical for audio preamp, pulse generator, and low-noise amplifier design.

Technical Context

The 2N4124TAR is a silicon planar epitaxial NPN transistor optimized for linear amplification and saturated switching. Its fT = 300 MHz and hfe = 120–480 (at 2 mA) support high-fidelity small-signal amplification up to VHF band edges, while VBE(sat) = 0.95 V and β = 10 switching condition confirm robust turn-on behavior in digital gate drivers.

Thermal performance is defined for FR-4 PCB mounting (1.6" × 1.6" × 0.06"), with RθJA = 200 °C/W and maximum TJ = +150 °C. Its Cobo = 4.0 pF and Cibo = 8.0 pF enable stable high-frequency biasing without unintended resonance in tuned amplifier stages.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO25 V - Maximum safe collector-emitter voltage before breakdown; sets upper rail limit for common-emitter amplifier supply.
IC (continuous)200 mA - Continuous collector current handling; supports moderate-power switching loads like relay coils or LED arrays.
fT300 MHz - Current-gain bandwidth product; enables stable small-signal amplification up to ~100 MHz with usable gain margin.
hFE120–360 @ IC = 2 mA - DC current gain range; ensures predictable bias point stability in Class-A amplifiers and emitter followers.
VCE(sat)0.3 V @ IC = 50 mA, IB = 5 mA - Low saturation voltage reduces conduction loss in switching applications.
NF5.0 dB @ IC = 100 µA - Noise figure at audio frequencies; suitable for low-level signal amplification in sensor front-ends.

Pinout & Package

2N4124TAR is packaged in TO-92 - a through-hole plastic case with 3 leads, rated for 625 mW total dissipation at 25°C ambient and derated linearly above that temperature.

Pin/TerminalCircuit RoleDesign Meaning
E (Emitter)Current sink terminalReference node for bias network; connects to ground or negative rail in common-emitter configuration.
B (Base)Control inputReceives current-limited drive to set operating point; requires series resistor to limit IB per hFE and load requirements.
C (Collector)Current source terminalDelivers amplified output current; connects to load and positive supply via collector resistor or direct rail tie in saturation mode.

Key Features

FeatureDesign Value
High fT with low Cobo300 MHz gain-bandwidth with only 4.0 pF output capacitance - minimizes frequency-dependent phase shift in RF-coupled stages.
Low-noise amplification5.0 dB noise figure at 100 µA - preserves SNR in microphone preamps and thermocouple signal chains.
Stable hFE across temperaturehFE maintains ≥120 from –40°C to +125°C - enables reliable biasing in unregulated industrial environments.
Low VCE(sat) at moderate IC0.3 V @ 50 mA - reduces power loss and self-heating in 5 V logic interface circuits.

Applications

Audio Pre-amplifier StageIndustrial Sensor Interface

Use Scenario: Amplifying weak AC-coupled signals from electret microphones or piezoelectric transducers before ADC sampling.

IC Role / Device Role / Timing Role: Discrete NPN amplifier in common-emitter configuration with emitter degeneration for linearity.

Use Value: 5.0 dB noise figure and 300 MHz fT ensure clean gain up to 20 kHz with headroom for harmonic content.

Use Scenario: Converting millivolt-level outputs from RTDs or strain gauges into buffered voltage levels for PLC analog inputs.

IC Role / Device Role / Timing Role: Low-drift emitter follower providing impedance transformation and current drive capability.

Use Value: Stable hFE over –40°C to +125°C maintains gain accuracy across wide ambient ranges.

Digital Logic Level TranslatorPulse Generator Driver

Use Scenario: Interfacing 3.3 V microcontroller GPIOs to 5 V or 12 V peripheral control lines (e.g., solenoid drivers).

IC Role / Device Role / Timing Role: Saturated switch with base current limiting and collector pull-up.

Use Value: VCE(sat) ≤ 0.3 V at 50 mA ensures minimal voltage drop and compatible logic-high thresholds.

Use Scenario: Generating fast-rising, low-jitter square waves for clock distribution or test equipment triggers.

IC Role / Device Role / Timing Role: Switching element in emitter-coupled multivibrator or monostable circuit.

Use Value: Turn-on time < 10 ns and fall time < 50 ns (at 10 mA) support sub-100 ns pulse widths with clean edges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MMBT4124SOT-23 surface-mount variant; identical electrical specs but lower RθJA = 357 °C/W and smaller footprint.Preferred for space-constrained PCBs; not suitable for through-hole prototyping or manual rework.Select MMBT4124 when automated SMT assembly is used and thermal margin allows higher ambient operation.
2N3904Lower fT (300 MHz typical vs. 2N4124TAR's min 300 MHz), lower IC rating (200 mA vs. same), but wider hFE spread (100–400) and industry-standard footprint.More widely stocked and validated in legacy designs; slightly less consistent high-frequency gain.Choose 2N3904 for cost-sensitive, non-VHF applications where second-source availability is critical.

Compared with MMBT4124 and 2N3904, the 2N4124TAR offers guaranteed minimum fT, tighter hFE binning at low IC, and TO-92 mechanical robustness - making it preferable for bench-testable, medium-frequency analog designs requiring repeatable performance.

Availability

2N4124TAR is available at Aetrix Electronics and suitable for industrial sensor interfaces, audio pre-amplifier stages, and digital logic level translation requiring stable component supply and long-term manufacturability.

Supply support for 2N4124TAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete devices before its acquisition by ON Semiconductor in 2016.

The 2N4124TAR belongs to Fairchild's legacy general-purpose bipolar transistor family, engineered for reliability in analog signal conditioning and low-speed digital switching across industrial and consumer equipment.

FAQ

What is the maximum operating junction temperature for the 2N4124TAR?

The 2N4124TAR has a maximum operating junction temperature (TJ) of +150 °C, as specified in its Absolute Maximum Ratings table. This limit applies under steady-state conditions with proper PCB thermal design - specifically a 1.6" × 1.6" × 0.06" FR-4 board. Exceeding this temperature risks permanent degradation of hFE and increased leakage currents. Derating begins at 25 °C ambient, with PD reduced by 5.0 mW/°C for the TO-92 package.

Does the 2N4124TAR support high-frequency amplification up to 100 MHz?

Yes, the 2N4124TAR supports high-frequency amplification up to 100 MHz, as confirmed by its minimum fT of 300 MHz and typical small-signal current gain (hfe) > 120 at 100 MHz. Measured data shows usable gain margin at 100 MHz under standard test conditions (IC = 10 mA, VCE = 20 V), making the 2N4124TAR suitable for VHF-band preamplifier and RF detector stages where linearity and low noise are required.

What is the typical noise figure of the 2N4124TAR and under what conditions is it measured?

The typical noise figure of the 2N4124TAR is 5.0 dB, measured at IC = 100 µA, VCE = 5.0 V, RS = 1.0 kΩ, and frequency range 10 Hz to 15.7 kHz. This value reflects its suitability for low-level audio and sensor signal amplification where preserving signal-to-noise ratio is critical. The 2N4124TAR maintains this NF across –40°C to +125°C ambient, supporting stable performance in unregulated industrial enclosures.

Can the 2N4124TAR be used as a saturated switch in 5 V logic circuits?

Yes, the 2N4124TAR can be used as a saturated switch in 5 V logic circuits. At IC = 50 mA and IB = 5 mA (β = 10), its VCE(sat) is guaranteed ≤ 0.3 V, ensuring sufficient logic-high margin for TTL and CMOS inputs. Its VBE(sat) = 0.95 V allows direct drive from 3.3 V or 5 V MCU GPIOs with appropriate base resistors. The 2N4124TAR's fast turn-on (<10 ns) and fall time (<50 ns) further support reliable digital switching up to 10 MHz.

How does the thermal resistance of the 2N4124TAR compare between junction-to-case and junction-to-ambient?

The 2N4124TAR has RθJC = 83.3 °C/W and RθJA = 200 °C/W when mounted on a standard 1.6" × 1.6" × 0.06" FR-4 PCB. This 2.4× difference highlights the dominant role of PCB copper area in heat dissipation. For example, at 350 mW dissipation, junction temperature rise above ambient would be ~70 °C - well within the +150 °C limit if ambient stays below +80 °C. The 2N4124TAR's thermal profile makes it viable for sealed enclosures without forced airflow, provided layout follows Fairchild's recommended pad geometry.

2N4124TAR Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging:
Tape & Box (TB)
Product Status:
Obsolete
Transistor Type:
NPN
Current - Collector (Ic) (Max):
200 mA
Voltage - Collector Emitter Breakdown (Max):
25 V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 5mA, 50mA
Current - Collector Cutoff (Max):
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 2mA, 1V
Power - Max:
625 mW
Frequency - Transition:
300MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-92-3

2N4124TAR FAQ

1.How can I place an order for 2N4124TAR through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N4124TAR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N4124TAR reliable?

The price and inventory of 2N4124TAR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N4124TAR is usually 5 days.

3.What payment methods are accepted for 2N4124TAR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N4124TAR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N4124TAR?

2N4124TAR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N4124TAR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N4124TAR?

For technical support, including 2N4124TAR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N4124TAR requirements.

6.How does Aetrix verify that 2N4124TAR is sourced from the original manufacturer or authorized distributors?

All 2N4124TAR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N4124TAR meets industry standards.

7.What is the process for return or replacement of 2N4124TAR?

All 2N4124TAR units undergo pre-shipment inspection (PSI). If there is an issue with 2N4124TAR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N4124TAR part is unused and in its original packaging.

Return procedure for 2N4124TAR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2N4124TAR Tags

  • 2N4124TAR
  • 2N4124TAR PDF
  • 2N4124TAR Datasheet
  • 2N4124TAR Specifications
  • 2N4124TAR Images
  • onsemi
  • onsemi 2N4124TAR
  • Buy 2N4124TAR
  • 2N4124TAR Price
  • 2N4124TAR Distributor
  • 2N4124TAR Supplier
  • 2N4124TAR Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER