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onsemi 2N4125TAR

Part No.:
2N4125TAR
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Datasheet:
Aetrix2N4125TAR.pdf
Description:
TRANS PNP 30V 0.2A TO-92-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,565

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Product details

Overview

2N4125TAR from Fairchild Semiconductor is a PNP general-purpose bipolar junction transistor used for low-to-mid current amplification and switching in linear and digital circuits, with VCEO = 30 V, IC = 200 mA continuous, hFE = 50–150 at IC = 2 mA, and VCE(sat) = 0.4 V at IC = 50 mA / IB = 5 mA. It operates across –55°C to +150°C and is commonly deployed in discrete logic interfaces, sensor signal conditioning, and relay drivers.

For engineers reviewing the 2N4125TAR datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP polarity, TO-92 package thermal resistance (RθJA = 200 °C/W), low-noise performance (NF = 5.0 dB at 10 Hz–15.7 kHz), and verified saturation behavior under β = 10 switching conditions.

Technical Context

The 2N4125TAR is a silicon planar epitaxial PNP BJT optimized for general-purpose analog amplification and saturated-switching operation. Its DC current gain (hFE) exhibits strong temperature dependence-ranging from ~250 at –40°C to ~50 at 125°C-and supports stable biasing in emitter-follower and common-emitter configurations with VBE(sat) = 0.95 V at IC = 50 mA.

Small-signal parameters include hfe = 50–200 (1 kHz–100 MHz), Cob = 4.5 pF at VCB = 5 V, and input capacitance Cib = 10 pF at VBE = 0.5 V, enabling predictable frequency response up to several MHz in audio and control-loop applications.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO30 V - Maximum safe collector-emitter voltage before breakdown under open-base condition; defines upper rail limit in switch or amplifier designs.
IC (continuous)200 mA - Absolute max DC collector current; usable up to 100 mA for reliable long-term operation with derated power.
hFE50–150 - DC current gain range at VCE = 1 V; determines base drive requirements for switching or bias stability in amplifiers.
VCE(sat)0.4 V - Collector-emitter voltage in hard saturation at IC/IB = 10; directly impacts conduction loss and heat generation in switch mode.
PD625 mW at TA = 25°C - Total power dissipation limit; derates linearly by 5.0 mW/°C above ambient, constraining thermal design in enclosed environments.
NF5.0 dB - Noise figure measured at 10 Hz–15.7 kHz with RS = 1 kΩ; indicates suitability for low-level signal amplification without significant added noise.

Pinout & Package

2N4125TAR is housed in a through-hole TO-92 package (3-lead, plastic, upright configuration) with standard lead orientation: flat side facing viewer, leads down, left-to-right = Emitter–Base–Collector.

Pin/TerminalCircuit RoleDesign Meaning
Lead 1 (left)EmitterCurrent exit terminal in PNP operation; connects to higher potential node in common-emitter or common-base topologies.
Lead 2 (center)BaseControl terminal governing minority-carrier injection; requires ~0.95 V forward bias and precise current limiting for saturation.
Lead 3 (right)CollectorCurrent entry terminal; tied to load or supply rail; must remain ≤30 V below emitter to avoid breakdown.

Key Features

FeatureDesign Value
Wide operating temperature range–55°C to +150°C junction temperature - Enables deployment in automotive engine compartments and industrial control enclosures without derating.
Low saturation voltageVCE(sat) = 0.4 V at IC = 50 mA - Reduces power loss and self-heating during switching, improving efficiency in discrete logic and driver stages.
Controlled hFE spreadMin 50 / Max 150 at IC = 2 mA - Supports consistent bias design across production lots without individual trimming.
Low leakage currentsICBO ≤ 50 nA at VCB = 20 V - Minimizes standby current in battery-powered or high-impedance sensing circuits.

Applications

Audio Pre-amplifier StageDiscrete Logic Level Shifter

Use Scenario: Amplifying weak microphone or piezoelectric sensor signals prior to ADC sampling in portable instrumentation.

IC Role / Device Role / Timing Role: PNP BJT configured in common-emitter mode to provide voltage gain with inverted output polarity and low input impedance.

Use Value: NF = 5.0 dB and hfe ≥ 50 at 1 kHz ensure minimal signal degradation while maintaining stable gain across temperature.

Use Scenario: Converting 3.3 V CMOS logic outputs to interface with 5 V TTL inputs in mixed-voltage microcontroller systems.

IC Role / Device Role / Timing Role: Saturated PNP switch acting as active-low level translator with fast turn-on/off times (<500 ns at IC = 10 mA).

Use Value: VCE(sat) = 0.4 V and hFE > 25 guarantee robust saturation even with marginal base drive, preventing false logic states.

Relay Driver CircuitTemperature-Stable Current Source

Use Scenario: Driving 12 V, 50 mA coil relays from microcontroller GPIO pins via base-resistor-limited switching.

IC Role / Device Role / Timing Role: PNP switch in emitter-follower configuration to sink relay current while isolating MCU from inductive kickback.

Use Value: IC = 200 mA rating and VCEO = 30 V allow safe operation with flyback diode protection and margin against transients.

Use Scenario: Generating a precision 1 mA bias current for op-amp reference or sensor excitation in industrial sensors.

IC Role / Device Role / Timing Role: PNP BJT biased in active region using two-resistor network to deliver stable current independent of supply variation.

Use Value: hFE consistency and low ICBO (≤50 nA) minimize current drift over –40°C to +85°C ambient range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose amplifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MPSA92VCEO = 300 V, IC = 500 mA, hFE = 25–300 - Higher voltage/current ratings but larger RθJA (250 °C/W).Preferred in high-voltage AC line sensing or snubber circuits where 30 V rating is insufficient.Select when >100 V collector swing or >100 mA load current is required; verify thermal layout due to higher power dissipation.
BC557VCEO = 45 V, IC = 100 mA, hFE = 110–800 - Wider hFE spread and lower max current; SOT-23 surface-mount package.Used in space-constrained PCBs where TO-92 footprint is unacceptable and lower current suffices.Choose for automated assembly and compact layouts; confirm hFE binning if tight gain control is needed.

Compared with MPSA92 and BC557, the 2N4125TAR offers balanced performance for mid-current, low-voltage PNP switching and amplification in through-hole designs, with tighter hFE control than BC557 and better thermal efficiency than MPSA92 in ambient-limited enclosures.

Availability

2N4125TAR is available at Aetrix Electronics and suitable for discrete amplifier stages, relay drivers, and logic level shifters requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for 2N4125TAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.

The 2N4125TAR belongs to Fairchild's legacy general-purpose bipolar transistor product line, engineered for cost-sensitive, reliability-critical linear and switching applications in industrial controls and consumer electronics.

FAQ

What is the maximum collector-emitter voltage rating for the 2N4125TAR?

The 2N4125TAR has a maximum collector-emitter voltage (VCEO) rating of 30 V under open-base conditions at TA = 25°C. This rating ensures safe operation in low-voltage switching and amplification circuits, including 12 V and 24 V industrial systems. Exceeding this voltage risks avalanche breakdown and permanent device damage. Derating is recommended for operation above 25°C ambient.

Does the 2N4125TAR support linear amplification applications?

Yes, the 2N4125TAR supports linear amplification with verified small-signal parameters: hfe = 50–200 (1 kHz–100 MHz), Cob = 4.5 pF, and NF = 5.0 dB at 10 Hz–15.7 kHz. Its hFE consistency and low leakage enable stable biasing in common-emitter and emitter-follower configurations. The 2N4125TAR is routinely used in microphone preamps and sensor signal conditioning where fidelity and low distortion are critical.

What is the thermal resistance from junction to ambient for the 2N4125TAR?

The 2N4125TAR has a junction-to-ambient thermal resistance (RθJA) of 200 °C/W in its standard TO-92 package at TA = 25°C. This value assumes free-air convection and no heatsinking. For sustained operation at full 625 mW dissipation, ambient temperature must be held below ~75°C. In practice, design margins recommend limiting power to ≤300 mW in enclosed or elevated-temperature environments to maintain TJ < 125°C.

Is the 2N4125TAR pin-compatible with other TO-92 PNP transistors like the 2N3906?

No, the 2N4125TAR is not pin-compatible with the 2N3906. While both use TO-92 packages, their pinouts differ: 2N4125TAR (flat side facing viewer, leads down) is E-B-C left-to-right, whereas 2N3906 is E-C-B. Swapping them without board revision will cause circuit failure. Always verify pin assignment using the official Fairchild 2N4125TAR datasheet before substitution.

What is the typical noise figure of the 2N4125TAR and under what conditions is it measured?

The typical noise figure of the 2N4125TAR is 5.0 dB, measured at VCE = 5.0 V, IC = 100 µA, RS = 1.0 kΩ, and frequency range 10 Hz to 15.7 kHz. This specification confirms its suitability for low-level analog signal amplification where added noise must be minimized-such as in electret microphone front-ends or thermocouple amplifiers. Performance degrades at higher source impedances or frequencies outside this band.

2N4125TAR Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging:
Tape & Box (TB)
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
200 mA
Voltage - Collector Emitter Breakdown (Max):
30 V
Vce Saturation (Max) @ Ib, Ic:
400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 2mA, 1V
Power - Max:
625 mW
Frequency - Transition:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-92-3

2N4125TAR FAQ

1.How can I place an order for 2N4125TAR through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N4125TAR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N4125TAR reliable?

The price and inventory of 2N4125TAR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N4125TAR is usually 5 days.

3.What payment methods are accepted for 2N4125TAR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N4125TAR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N4125TAR?

2N4125TAR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N4125TAR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N4125TAR?

For technical support, including 2N4125TAR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N4125TAR requirements.

6.How does Aetrix verify that 2N4125TAR is sourced from the original manufacturer or authorized distributors?

All 2N4125TAR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N4125TAR meets industry standards.

7.What is the process for return or replacement of 2N4125TAR?

All 2N4125TAR units undergo pre-shipment inspection (PSI). If there is an issue with 2N4125TAR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N4125TAR part is unused and in its original packaging.

Return procedure for 2N4125TAR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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