onsemi 2N4264

Overview

2N4264 from ON Semiconductor (formerly Motorola) is an NPN silicon small-signal transistor designed for general-purpose amplification and switching in low-power analog and digital circuits. It features V_CEO = 15 V, I_C = 200 mA, h_FE = 25–160 (at I_C = 1–100 mA), f_T = 300 MHz, and TO-92 (CASE 29–04) packaging - commonly used in audio preamplifiers, pulse generators, and logic interface stages.

For engineers reviewing the 2N4264 datasheet, pinout, applications, or equivalent options, key selection criteria include its DC current gain range across collector current, saturation voltage performance at I_C/I_B = 10, thermal resistance (R_θJA = 357°C/W), and switching timing (t_on = 25 ns, t_off = 35 ns) under defined test conditions.

Technical Context

The 2N4264 operates as a standard bipolar junction transistor with base-controlled current amplification. Its h_FE varies significantly with I_C and temperature - minimum 20 at I_C = 10 mA and –55°C, up to 160 at I_C = 10 mA and 25°C - requiring bias network design that accommodates this spread. It supports linear operation up to f_T = 300 MHz under specified conditions (I_C = 10 mA, V_CE = 10 V).

Switching behavior is characterized by charge-driven dynamics: total control charge Q_T ≤ 80 pC defines turn-off energy requirements, while storage time t_s ≤ 20 ns (at I_C = 100 mA) reflects minority-carrier lifetime limitations. The device uses epoxy-molded TO-92 plastic package with standardized lead pitch (2.54 mm) and EIAJ/EIA-468 compliance.

Key Specifications

Pinout & Package

2N4264 is housed in a TO-92 (CASE 29–04, STYLE 1) plastic package with 2.54 mm lead spacing, compliant with EIAJ RC-1008B and EIA-468 standards. Leads are arranged in straight-line configuration with emitter (pin 1), base (pin 2), and collector (pin 3) - verified per Motorola Device Data Figure 2–22 and package outline drawing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN small-signal transistor applications.

Compared with BC547B and MPS2222A, the 2N4264 offers a balanced trade-off of speed (300 MHz f_T), moderate current handling (200 mA), and low saturation voltage (0.22 V), making it optimal for cost-sensitive, medium-speed analog and digital interface applications where extreme voltage or current headroom is unnecessary.

Availability

2N4264 is available at Aetrix Electronics and suitable for audio preamplification, digital logic interfacing, and relay control applications requiring stable component supply, long-term obsolescence management, and consistent parametric performance across production lots.

Supply support for 2N4264 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensors, and discrete components, with roots in Motorola's semiconductor division.

The 2N4264 belongs to ON Semiconductor's legacy small-signal transistor product line, engineered for reliability in general-purpose amplification and switching across consumer, industrial, and automotive applications.

FAQ

What is the maximum continuous collector current for the 2N4264?

The 2N4264 has a maximum continuous collector current (I_C) of 200 mAdc at T_A = 25°C. This rating decreases linearly above 25°C ambient temperature at 2.8 mW/°C due to thermal derating. At case temperature (T_C) = 25°C, the device supports up to 1.0 W dissipation, but practical use remains constrained by the 200 mA current limit and package thermal resistance (R_θJA = 357°C/W). Always verify actual junction temperature in final layout.

Does the 2N4264 have a documented pinout configuration?

Yes, the 2N4264 uses TO-92 package STYLE 1: pin 1 is emitter, pin 2 is base, and pin 3 is collector - confirmed in Motorola Device Data Figure 2–22 and package outline drawing CASE 29–04. This matches standard EIAJ RC-1008B orientation. When viewing the flat side of the TO-92 with leads pointing downward, left-to-right pin order is emitter-base-collector.

What is the typical DC current gain (h_FE) of the 2N4264 at 10 mA collector current?

At I_C = 10 mAdc and V_CE = 1.0 Vdc, the 2N4264 exhibits h_FE ranging from 40 (minimum) to 160 (maximum) at T_A = 25°C. The datasheet specifies min/max bounds across test conditions: 40–160 at I_C = 10 mA, 20–160 at I_C = 10 mA and –55°C, and 30–160 at I_C = 100 mA. Designers must account for this wide spread in bias networks.

Can the 2N4264 be used in RF amplifier applications?

Yes, the 2N4264 supports RF amplification up to approximately 100 MHz due to its f_T = 300 MHz (measured at I_C = 10 mA, V_CE = 10 V, f = 100 MHz). However, gain rolls off rapidly above 50 MHz, and stability requires careful layout, emitter degeneration, and proper bypassing. It is not optimized for narrowband VHF/UHF power amplification but is suitable for broadband low-gain IF or buffer stages.

What is the thermal resistance junction-to-ambient (R_θJA) for the 2N4264 in free air?

The 2N4264 has a thermal resistance R_θJA of 357°C/W in free-air conditions, as specified in the Thermal Characteristics table. This value assumes no heatsinking and standard PCB mounting. With this R_θJA, the maximum power dissipation at T_A = 25°C is PD = (T_J(max) – T_A) / R_θJA = (150°C – 25°C) / 357°C/W ≈ 350 mW - matching the rated 350 mW total device dissipation.