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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

NXP Semiconductors 2N4401,116

Name: 2N4401,116
Brand: NXP Semiconductors
SKU: 2N4401,116
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N4401,116

Manufacturer:: NXP Semiconductors

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Datasheet:: 2N4401,116.pdf

Description:: TRANS NPN 40V 0.6A TO-92-3

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Product details

Overview

2N4401,116 from Nexperia (formerly Philips Semiconductors) is an NPN silicon switching transistor in TO-92 (SOT54/SC-43A) package, rated for 40 V V_CEO, 600 mA I_C, and 630 mW P_tot at T_amb ≤25 °C. It delivers h_FE = 100–300 at I_C = 150 mA and supports fast switching with t_on ≤35 ns and t_off ≤250 ns - widely used in relay drivers, LED matrix controllers, and low-power logic-level interface circuits.

For engineers reviewing the 2N4401,116 datasheet, 2N4401,116 pinout, 2N4401,116 application, or 2N4401,116 equivalent, key selection considerations include verified DC current gain across 0.1–500 mA load range, saturation voltage under defined I_B/I_C drive conditions, thermal resistance (R_th(j-a) = 200 K/W), and compatibility with through-hole PCB assembly using standard FR4 layout.

Technical Context

The 2N4401,116 operates as a general-purpose bipolar junction transistor optimized for saturated switching rather than linear amplification. Its design emphasizes low V_CE(sat) (≤750 mV at I_C = 500 mA, I_B = 50 mA) and controlled charge storage to minimize turn-off delay and storage time (t_s ≤200 ns).

It features a planar epitaxial die structure with emitter ballasting, enabling stable h_FE across production lots and predictable switching behavior under pulsed conditions (t_p ≤300 µs, duty cycle ≤2%). The device is not rated for avalanche operation and requires external base current limiting in all applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	40 V - maximum collector-emitter voltage before breakdown with base open; defines safe operating voltage in common-emitter switch configurations.
I_C (DC)	600 mA - continuous collector current limit; determines max steady-state load drive capability without derating.
P_tot	630 mW at T_amb ≤25 °C - total power dissipation limit on FR4 PCB; requires thermal derating above 25 °C ambient.
h_FE	100–300 at I_C = 150 mA, V_CE = 1 V - DC current gain range used to size base drive resistor for reliable saturation.
V_CE(sat)	≤750 mV at I_C = 500 mA, I_B = 50 mA - ensures low conduction loss and minimal heating when fully switched ON.
f_T	250 MHz - transition frequency indicating usable bandwidth for small-signal amplification or high-speed switching edge control.
t_off	≤250 ns - total turn-off time (10%→90%); critical for PWM frequencies up to ~1 MHz in digital output stages.

Pinout & Package

2N4401,116 is housed in a plastic single-ended leaded (through-hole) TO-92 package (SOT54 / SC-43A), with 3 leads spaced on 2.54 mm pitch and 14.5 mm overall length. Leads are tin-plated copper, compatible with wave and hand soldering per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1	Collector	Main current output terminal; connects to load supply rail or inductive load return path.
2	Base	Control input; requires current-limited drive (typically 5–50 mA) to achieve full saturation.
3	Emitter	Current return path; tied to circuit ground or low-side switch reference in common-emitter topology.

Key Features

Feature	Design Value
High DC current gain consistency	h_FE ≥100 at I_C = 150 mA enables robust saturation with moderate base drive, reducing MCU GPIO current burden.
Low saturation voltage	V_CE(sat) ≤400 mV at I_C = 150 mA ensures <100 mW conduction loss, minimizing self-heating in compact layouts.
Controlled switching speed	Combined t_on + t_off < 300 ns supports clean digital waveform generation up to 1 MHz without excessive ringing.
Thermal stability	R_th(j-a) = 200 K/W on FR4 allows 630 mW operation at 25 °C ambient, with linear derating to zero at 150 °C junction.

Applications

Relay Driver Stage	LED Matrix Row Control
Use Scenario: Driving 12 V/40 mA electromagnetic relay coil from microcontroller GPIO. IC Role / Device Role / Timing Role: Low-side saturated switch turning relay ON/OFF with <10 µs response. Use Value: V_CE(sat) ≤400 mV limits coil voltage drop to <0.4 V, ensuring >11.6 V applied to relay for guaranteed pull-in.	Use Scenario: Scanning 8×8 red LED matrix with row-enable transistors. IC Role / Device Role / Timing Role: High-current row sink switching at 1 kHz multiplex rate. Use Value: 600 mA I_C rating supports simultaneous drive of up to 20 LEDs per row at 20 mA each with margin.
Logic-Level Interface	Small-Signal Amplifier Stage
Use Scenario: Level-shifting 3.3 V CMOS signal to control 5 V peripheral enable line. IC Role / Device Role / Timing Role: Common-emitter inverter with fixed bias network. Use Value: h_FE ≥80 at I_C = 1 mA ensures full logic swing with <10 kΩ pull-up, eliminating need for active pull-ups.	Use Scenario: Pre-amplifying sensor output (e.g., thermistor bridge) before ADC input. IC Role / Device Role / Timing Role: Fixed-bias common-emitter amplifier with 100 kHz bandwidth. Use Value: f_T = 250 MHz provides >10× bandwidth margin at 100 kHz, preserving signal integrity with minimal phase shift.

Relay Driver Stage

LED Matrix Row Control

Use Scenario: Driving 12 V/40 mA electromagnetic relay coil from microcontroller GPIO.

IC Role / Device Role / Timing Role: Low-side saturated switch turning relay ON/OFF with <10 µs response.

Use Value: V_CE(sat) ≤400 mV limits coil voltage drop to <0.4 V, ensuring >11.6 V applied to relay for guaranteed pull-in.

Use Scenario: Scanning 8×8 red LED matrix with row-enable transistors.

IC Role / Device Role / Timing Role: High-current row sink switching at 1 kHz multiplex rate.

Use Value: 600 mA I_C rating supports simultaneous drive of up to 20 LEDs per row at 20 mA each with margin.

Logic-Level Interface

Small-Signal Amplifier Stage

Use Scenario: Level-shifting 3.3 V CMOS signal to control 5 V peripheral enable line.

IC Role / Device Role / Timing Role: Common-emitter inverter with fixed bias network.

Use Value: h_FE ≥80 at I_C = 1 mA ensures full logic swing with <10 kΩ pull-up, eliminating need for active pull-ups.

Use Scenario: Pre-amplifying sensor output (e.g., thermistor bridge) before ADC input.

IC Role / Device Role / Timing Role: Fixed-bias common-emitter amplifier with 100 kHz bandwidth.

Use Value: f_T = 250 MHz provides >10× bandwidth margin at 100 kHz, preserving signal integrity with minimal phase shift.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC337-40,115	Same TO-92 package; h_FE min = 250 (vs. 100 for 2N4401,116); V_CEO = 45 V; P_tot = 625 mW.	Slightly higher gain improves base drive margin in low-current switching; identical footprint enables direct replacement in most layouts.	Select when tighter h_FE tolerance or marginally higher voltage rating is required without changing board design.
MPS2222A	TO-92 package; V_CEO = 40 V; I_C = 800 mA; h_FE = 100–300; R_th(j-a) = 200 K/W; V_CE(sat) ≤1 V at I_C = 500 mA.	Higher peak current rating supports short-duration surge loads; slightly higher V_CE(sat) increases conduction loss by ~15% at full load.	Choose for applications requiring brief overcurrent capability (e.g., solenoid pulse drive) where thermal budget permits.

Compared with BC337-40,115 and MPS2222A, the 2N4401,116 offers balanced performance across gain, saturation voltage, and thermal resistance - making it optimal for cost-sensitive, medium-speed switching where consistent manufacturability and long-term supply stability are prioritized.

Availability

2N4401,116 is available at Aetrix Electronics and suitable for industrial control panels, consumer appliance PCBs, and educational electronics kits requiring stable component supply and broad distributor support.

Supply support for 2N4401,116 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET solutions with focus on efficiency and sustainability.

The 2N4401,116 belongs to Nexperia's legacy general-purpose bipolar transistor family, engineered for robustness in through-hole manufacturing environments and reliability in non-automotive industrial and consumer end-equipment.

FAQ

What is the maximum continuous collector current rating for the 2N4401,116?

The 2N4401,116 has a maximum DC collector current (I_C) rating of 600 mA at T_amb ≤25 °C. This value decreases linearly with rising ambient temperature due to thermal derating - at 70 °C ambient, the usable I_C drops to approximately 420 mA. Operation beyond this limit risks thermal runaway or permanent degradation of the 2N4401,116 junction.

Does the 2N4401,116 support avalanche energy rating?

No, the 2N4401,116 does not specify an avalanche energy rating (E_AS) or ruggedness test data in its official datasheet. It is designed strictly for forward-biased switching operation and must be protected with external clamping (e.g., flyback diode) when driving inductive loads. Relying on inherent avalanche capability in the 2N4401,116 is unsafe and unsupported.

What is the typical base-emitter saturation voltage for the 2N4401,116?

The 2N4401,116 exhibits V_BE(sat) ≤950 mV at I_C = 150 mA and I_B = 15 mA, and ≤1.2 V at I_C = 500 mA and I_B = 50 mA. These values define the minimum GPIO or driver voltage needed to ensure full saturation - for example, a 3.3 V MCU output can reliably drive the 2N4401,116 with appropriate base resistor sizing.

Can the 2N4401,116 be used in linear amplifier configurations?

While the 2N4401,116 can operate in the active region, its datasheet characterizes parameters (e.g., h_FE, f_T) primarily under switching conditions. It lacks guaranteed linearity specs (THD, distortion, or output impedance) and is not optimized for low-noise or high-fidelity amplification. For analog gain stages, dedicated small-signal transistors like BC547B are preferred over the 2N4401,116.

Is the 2N4401,116 RoHS compliant and halogen-free?

Yes, the 2N4401,116 manufactured by Nexperia meets RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. The device carries the "HF" marking on tape-and-reel packaging and complies with JEDEC J-STD-020 moisture sensitivity level (MSL) 1 - unlimited floor life at ≤30 °C/60% RH. Full compliance documentation is available for the 2N4401,116 upon request.

2N4401,116 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 600 mA

Voltage - Collector Emitter Breakdown (Max):: 40 V

Vce Saturation (Max) @ Ib, Ic:: 750mV @ 50mA, 500mA

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 150mA, 1V

Power - Max:: 630 mW

Frequency - Transition:: 250MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92-3

2N4401,116 FAQ

1.How can I place an order for 2N4401,116 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N4401,116 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N4401,116 reliable?

The price and inventory of 2N4401,116 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N4401,116 is usually 5 days.

3.What payment methods are accepted for 2N4401,116?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N4401,116 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N4401,116?

2N4401,116 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N4401,116 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N4401,116?

For technical support, including 2N4401,116 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N4401,116 requirements.

6.How does Aetrix verify that 2N4401,116 is sourced from the original manufacturer or authorized distributors?

All 2N4401,116 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N4401,116 meets industry standards.

7.What is the process for return or replacement of 2N4401,116?

All 2N4401,116 units undergo pre-shipment inspection (PSI). If there is an issue with 2N4401,116, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N4401,116 part is unused and in its original packaging.

Return procedure for 2N4401,116:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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