Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi 2N4403_D81Z

Part No.:
2N4403_D81Z
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Datasheet:
Aetrix2N4403_D81Z.pdf
Description:
TRANS PNP 40V 0.6A TO-92-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,601

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

2N4403_D81Z from Fairchild Semiconductor is a PNP general-purpose bipolar junction transistor used as an amplifier or switch in low-to-medium power linear and switching circuits, with VCEO = 40 V, IC = 600 mA, hFE = 100 (at IC = 10 mA), fT = 200 MHz, and TO-92 package. It operates across –55°C to +150°C and supports applications such as signal inversion, relay driving, and discrete logic interfacing.

For engineers reviewing the 2N4403_D81Z datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, guaranteed VCEO/VCBO = 40 V rating, confirmed 600 mA continuous collector current capability, thermal resistance RθJA = 200°C/W (TO-92), and documented switching times (td = 15 ns, ts = 225 ns) under standard test conditions.

Technical Context

The 2N4403_D81Z is a silicon PNP BJT optimized for general-purpose amplification and saturated switching. Its DC current gain (hFE) ranges from 30 to 300 depending on collector current, and it delivers VCE(sat) = 0.4 V at IC = 150 mA / IB = 15 mA, supporting efficient low-voltage switching.

Small-signal parameters include fT = 200 MHz at IC = 20 mA, Ccb = 8.5 pF, and Ceb = 30 pF - enabling use in audio-frequency amplifiers and moderate-speed digital interfaces. Thermal design is constrained by RθJA = 200°C/W and maximum junction temperature of +150°C.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO40 V - Maximum safe collector-emitter voltage before breakdown; defines upper rail limit in PNP switch/amplifier stages.
IC (continuous)600 mA - Absolute max DC collector current; usable up to 500 mA per functional description without derating.
hFE100 (at IC = 10 mA, VCE = 1.0 V) - Confirmed DC current gain for biasing stable Class-A amplifiers or calculating base drive.
fT200 MHz - Unity-gain bandwidth; validates suitability for audio amplification and sub-100 MHz switching.
ts (storage time)225 ns - Measured at VCC = 30 V, IC = 150 mA; critical for turn-off delay in saturated switching applications.
RθJA200 °C/W - Junction-to-ambient thermal resistance in TO-92; determines required heatsinking or ambient derating above 25°C.
PD625 mW - Total device dissipation at TA = 25°C; drops linearly at 5.0 mW/°C above 25°C.

Pinout & Package

2N4403_D81Z is housed in a through-hole TO-92 package with standardized lead configuration: Emitter (E), Base (B), Collector (C) arranged left-to-right when viewing the flat side with leads downward.

Pin/TerminalCircuit RoleDesign Meaning
E (Emitter)Current source terminal for PNP operationConnected to higher potential rail in common-emitter switches; sets reference for base bias network.
B (Base)Control input for minority-carrier injectionReceives current-limited drive to saturate or cut off; requires ~1/10th of IC for hard saturation.
C (Collector)Current sink terminalTypically tied to load and ground-return path; voltage swing limited by VCEO = 40 V rating.

Key Features

FeatureDesign Value
High fT bandwidth200 MHz enables stable small-signal amplification up to mid-VHF range without external compensation.
Low VCE(sat)0.4 V at IC = 150 mA reduces conduction loss and self-heating in switching regulators and driver stages.
Wide temperature range–55°C to +150°C operation supports deployment in automotive engine compartments and industrial control enclosures.
Verified switching performanceDocumented td/tr/ts/tf values allow accurate timing budgeting in discrete logic and pulse-width modulation circuits.

Applications

Audio Signal AmplificationDiscrete Logic Level Shifting

Use Scenario: Amplifying line-level analog signals in preamplifier stages or active filters before ADC sampling.

IC Role / Device Role / Timing Role: PNP common-emitter amplifier providing inverted gain with low distortion and wide bandwidth.

Use Value: Delivers hFE ≥ 60 and fT = 200 MHz to maintain fidelity up to 20 kHz with minimal phase shift.

Use Scenario: Converting 3.3 V logic outputs to interface with 5 V or 12 V legacy peripherals or optocouplers.

IC Role / Device Role / Timing Role: Saturated PNP switch acting as active-low level translator with fast edge response.

Use Value: Achieves tr = 20 ns and tf = 30 ns to preserve signal integrity in 1–5 MHz digital control lines.

Relay Driver CircuitCurrent Mirror Reference

Use Scenario: Driving electromagnetic relays requiring 50–200 mA coil current in PLC I/O modules or HVAC controllers.

IC Role / Device Role / Timing Role: High-current PNP switch operating in saturation to minimize power loss and heat generation.

Use Value: Supports IC = 500 mA with VCE(sat) ≤ 0.75 V, reducing relay coil heating and improving contact lifetime.

Use Scenario: Building matched current sources in analog sensor conditioning circuits or bias networks for op-amps.

IC Role / Device Role / Timing Role: Discrete PNP element in emitter-degenerated mirror topology for stable DC current replication.

Use Value: Maintains hFE consistency across temperature (–55°C to +150°C), enabling <1% current error over full industrial range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose amplifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MMBT4403SOT-23 surface-mount package; lower PD = 350 mW; RθJA = 357°C/W; identical electrical specs.Used where board space is constrained and reflow assembly is preferred; not drop-in compatible with TO-92 footprint.Select MMBT4403 only when layout supports SMT and thermal management accounts for higher RθJA.
2N3906Lower IC = 200 mA; VCEO = 40 V; hFE = 100 (at IC = 10 mA); fT = 250 MHz; TO-92 package.Suitable for low-power signal switching but insufficient for >200 mA loads; faster but less robust in high-current drive.Choose 2N3906 only for signal-level tasks below 150 mA; avoid for relay or lamp drivers requiring >200 mA.

Compared with MMBT4403 and 2N3906, the 2N4403_D81Z provides the highest continuous collector current (600 mA) in a through-hole TO-92 package, making it uniquely suited for medium-power discrete switching where solderability, serviceability, and thermal margin are prioritized over miniaturization.

Availability

2N4403_D81Z is available at Aetrix Electronics and suitable for relay driver circuits, audio preamplifiers, discrete logic translators, and industrial sensor interface modules requiring stable component supply and long-term manufacturability.

Supply support for 2N4403_D81Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.

The 2N4403_D81Z belongs to Fairchild's legacy general-purpose BJT product line, designed specifically for cost-sensitive, high-reliability linear amplification and saturated switching in industrial, consumer, and automotive auxiliary systems.

FAQ

What is the maximum collector current rating for the 2N4403_D81Z?

The 2N4403_D81Z has an absolute maximum continuous collector current (IC) of 600 mA, with functional operation validated up to 500 mA in switching and amplification roles. Derating is required above 25°C ambient per the 5.0 mW/°C thermal coefficient, and pulsed operation must follow factory guidance due to storage time limitations.

Is the 2N4403_D81Z pin-compatible with the MMBT4403?

No, the 2N4403_D81Z is not pin-compatible with the MMBT4403. While both share identical electrical characteristics, the 2N4403_D81Z uses a TO-92 through-hole package with E-B-C lead order, whereas the MMBT4403 uses an SOT-23 surface-mount package with different pinout and footprint. PCB redesign is required for substitution.

What is the typical storage time (ts) of the 2N4403_D81Z under standard test conditions?

The 2N4403_D81Z exhibits a typical storage time (ts) of 225 ns when tested at VCC = 30 V, IC = 150 mA, and IB1 = IB2 = 15 mA. This value is critical for estimating total turn-off delay in saturated switching applications and must be included in timing budgets for PWM or digital logic interfacing.

Does the 2N4403_D81Z support operation at elevated temperatures?

Yes, the 2N4403_D81Z is rated for junction temperatures from –55°C to +150°C and ambient operation across the same range. Its thermal resistance RθJA = 200°C/W (TO-92) allows reliable function in industrial environments, provided power dissipation remains within derated limits - e.g., ≤400 mW at 75°C ambient.

Can the 2N4403_D81Z be used in linear amplifier configurations?

Yes, the 2N4403_D81Z is explicitly characterized for linear amplification, with hFE specified across multiple IC points, fT = 200 MHz, and small-signal parameters (hie, hfe, hoe) provided at 1 kHz. Its low VCE(sat) and stable gain make it suitable for Class-A audio preamplifiers and sensor signal conditioning stages.

2N4403_D81Z Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
600 mA
Voltage - Collector Emitter Breakdown (Max):
40 V
Vce Saturation (Max) @ Ib, Ic:
750mV @ 50mA, 500mA
Current - Collector Cutoff (Max):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 2V
Power - Max:
625 mW
Frequency - Transition:
200MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-92-3

2N4403_D81Z FAQ

1.How can I place an order for 2N4403_D81Z through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N4403_D81Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N4403_D81Z reliable?

The price and inventory of 2N4403_D81Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N4403_D81Z is usually 5 days.

3.What payment methods are accepted for 2N4403_D81Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N4403_D81Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N4403_D81Z?

2N4403_D81Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N4403_D81Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N4403_D81Z?

For technical support, including 2N4403_D81Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N4403_D81Z requirements.

6.How does Aetrix verify that 2N4403_D81Z is sourced from the original manufacturer or authorized distributors?

All 2N4403_D81Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N4403_D81Z meets industry standards.

7.What is the process for return or replacement of 2N4403_D81Z?

All 2N4403_D81Z units undergo pre-shipment inspection (PSI). If there is an issue with 2N4403_D81Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N4403_D81Z part is unused and in its original packaging.

Return procedure for 2N4403_D81Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2N4403_D81Z Tags

  • 2N4403_D81Z
  • 2N4403_D81Z PDF
  • 2N4403_D81Z Datasheet
  • 2N4403_D81Z Specifications
  • 2N4403_D81Z Images
  • onsemi
  • onsemi 2N4403_D81Z
  • Buy 2N4403_D81Z
  • 2N4403_D81Z Price
  • 2N4403_D81Z Distributor
  • 2N4403_D81Z Supplier
  • 2N4403_D81Z Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER