onsemi 2N4403RLRA

Overview

2N4403RLRA from onsemi is a PNP silicon general-purpose bipolar junction transistor (BJT) designed for linear amplification and switching applications in low-voltage, medium-current circuits. It features V_CEO = 40 V, I_C = 600 mA continuous, h_FE = 30–300 (at I_C = 0.1–150 mA), f_T = 200 MHz, and V_CE(sat) ≤ 0.75 V at I_C = 500 mA / I_B = 50 mA. It is commonly used in discrete amplifier stages, relay drivers, and level-shifting interfaces.

For engineers reviewing the 2N4403RLRA datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, TO-92 package details, switching timing data (t_d/t_r/t_s/t_f), thermal resistance values (R_JA = 200°C/W), and real-world alternative part guidance - all grounded in onsemi's official 2N4403/D datasheet Rev. 3.

Technical Context

The 2N4403RLRA operates as a standard PNP BJT with base-controlled current amplification and saturation switching behavior. Its DC current gain (h_FE) varies significantly with collector current - from ≥30 at 0.1 mA to ≥100 at 10 mA and ≥20 at 500 mA - indicating optimized use in mid-current analog or digital switching roles. The device exhibits C_cb = 8.5 pF and C_eb = 30 pF at specified bias conditions, supporting stable operation up to ~200 MHz small-signal bandwidth.

Thermal design is constrained by R_JA = 200°C/W (TO-92, free-air) and R_JC = 83.3°C/W, requiring careful power derating above 25°C ambient. Switching performance includes t_s = 225 ns (storage time dominant), making it suitable for <100 kHz switching but not high-frequency PWM; V_BE(sat) ranges from 0.75 V to 1.3 V depending on drive level, confirming strong base overdrive dependency.

Key Specifications

Pinout & Package

2N4403RLRA is housed in a standard through-hole TO-92 (Case 29-11) package with bent leads and tape-and-reel packaging (2000 units/reel). The package has three terminals arranged in straight-line configuration with emitter (pin 1), base (pin 2), and collector (pin 3) - confirmed per onsemi's marking diagram and ordering information table.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Compared with MPSA92 and BC557B, the 2N4403RLRA uniquely balances 40 V breakdown, 600 mA current, 200 MHz f_T, and TO-92 mechanical compatibility - making it the preferred choice for cost-sensitive, medium-power PNP switching where both speed and robustness matter.

Availability

2N4403RLRA is available at Aetrix Electronics and suitable for relay driver circuits, discrete audio preamplifiers, level-shifting interfaces, LED current sink controls, and industrial signal conditioning systems requiring stable component supply and long-term manufacturability.

Supply support for 2N4403RLRA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, medical, and IoT applications.

The 2N4403RLRA belongs to onsemi's legacy general-purpose bipolar transistor product line, engineered for reliability, wide temperature operation, and ease of integration in discrete analog and switching circuits across industrial and consumer electronics.

FAQ

What is the maximum continuous collector current rating for the 2N4403RLRA?

The 2N4403RLRA has a maximum continuous collector current (I_C) rating of 600 mA at T_A = 25°C. Derating is required above ambient temperature - 5.0 mW/°C for free-air operation. At 70°C ambient, usable I_C drops to approximately 365 mA to maintain safe junction temperature. This rating is validated per onsemi's 2N4403/D datasheet Rev. 3 absolute maximum ratings table.

Does the 2N4403RLRA have Pb-free packaging?

Yes, the 2N4403RLRA is a Pb-free (RoHS-compliant) variant, indicated by the "RLRA" suffix and confirmed in onsemi's ordering information table. It uses matte tin lead finish and meets JEDEC J-STD-609 Category 1a requirements. The device is qualified for lead-free reflow soldering profiles with peak temperatures up to 260°C, as documented in onsemi's Soldering and Mounting Techniques Reference Manual.

What is the typical storage time (t_s) of the 2N4403RLRA and how does it affect switching performance?

According to the 2N4403/D datasheet, the 2N4403RLRA has a typical storage time (t_s) of 225 ns under test conditions of V_CC = 30 V, I_C = 150 mA, and I_B1 = I_B2 = 15 mA. This relatively long storage time dominates turn-off delay and limits practical switching frequency to below 100 kHz unless mitigated by active base pull-down or Baker clamp techniques - a key design consideration when using the 2N4403RLRA in digital switching applications.

Can the 2N4403RLRA be used in linear amplifier configurations?

Yes, the 2N4403RLRA is explicitly characterized for linear operation, with published h_FE, h_ie, h_re, h_fe, and h_oe parameters at V_CE = −10 V and f = 1 kHz. Its noise figure (6–8 dB at 1 kHz, I_C = 1 mA) and f_T = 200 MHz support low-noise, medium-gain audio and RF preamplifier stages. Bias stability must account for h_FE variation across current and temperature, as shown in Figure 14 of the 2N4403/D datasheet.

What is the thermal resistance junction-to-ambient (R_JA) for the 2N4403RLRA in its TO-92 package?

The thermal resistance junction-to-ambient (R_JA) for the 2N4403RLRA in the TO-92 package is 200°C/W under free-air conditions, as specified in the Thermal Characteristics table of the 2N4403/D datasheet. This value assumes no PCB copper pour or heatsinking. With a 1-inch² 2-oz copper pad, R_JA can improve to ~120°C/W - enabling higher continuous power dissipation while maintaining T_J ≤ 150°C.